Infrared Quantum-Cascade Lasers Based Upon III-V Nitride Heterostructures

基于 III-V 族氮化物异质结构的红外量子级联激光器

• 批准号: 0439270
• 负责人: Russell Dupuis
• 金额: --
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-09-01 至 2006-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0439270&HistoricalAwards=false
• 关键词: Infrared; Quantum; Cascade; Lasers; Based

Our research program objectives are the design and growth of novel InAlGaN-based quantum-cascade lasers (QCLs) operating in the mid-infrared spectral region. The materials for these devices will be grown by metalorganic chemical vapor deposition and will be characterized by a variety of techniques, including X-ray diffraction, optical absorption, photoluminescence, and transmission electron microscopy. The QCL devices offer the potential for a dramatic performance improvement over other types of injection lasers including a smaller dependence of the threshold current upon operating temperature (i.e., a higher To), a more stable emission wavelength vs. temperature, and higher quantum efficiency. In addition, the III-N materials potentially offer significant advantages over other III-Vs used for infrared laser applications. This program will lead to the demonstration of nitride QCLs emitting in the near infrared (IR) in the 4-12m-wavelength regime used in optical sensing applications, as well as potentially at other longer-wavelength mid-IR wavelengths (e.g., 15-30m). Other possibilities include the realization of 1.33 and 1.55mm lasers using this approach. Graduate student training is emphasized in this program.

我们的研究项目目标是设计和开发在中红外光谱区工作的新型 InAlGaN 量子级联激光器 (QCL)。 这些器件的材料将通过金属有机化学气相沉积法生长，并通过多种技术进行表征，包括 X 射线衍射、光吸收、光致发光和透射电子显微镜。 与其他类型的注入激光器相比，QCL 器件具有显着的性能改进潜力，包括阈值电流对工作温度的依赖性更小（即更高的 To）、更稳定的发射波长与温度的关系以及更高的量子效率。 此外，与用于红外激光应用的其他 III-V 材料相比，III-N 材料具有潜在的显着优势。 该计划将展示氮化物 QCL 在光学传感应用中使用的 4-12m 波长范围内的近红外 (IR) 发射，以及可能在其他更长波长的中红外波长（例如 15-30m）发射。 其他可能性包括使用这种方法实现 1.33 和 1.55mm 激光器。 该计划强调研究生培养。