International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) XVIII, San Diego CA, July 10-15, 2016
第十八届金属有机气相外延国际会议 (ICMOVPE),加利福尼亚州圣地亚哥,2016 年 7 月 10-15 日
基本信息
- 批准号:1639797
- 负责人:
- 金额:$ 0.6万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2016
- 资助国家:美国
- 起止时间:2016-06-15 至 2017-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The proposed project seeks financial support for graduate students and Post-Doctoral Fellows to help defray the cost of conference registration and related travel expenses for those who will be giving presentations at a conference that will be held July 10-15, 2016 in San Diego, CA, The conference will address the latest advances in Metalorganic Vapor Phase Epitaxy (MOVPE) materials and device technologies. Topics to be addressed include among other Fundamental Studies and Modeling of Epitaxial Processes, Wide-Bandgap Group-III Nitride Materials and Devices, III-V Semiconductors and Devices, Narrow Bandgap Materials and Devices, II-VI Materials and Devices, Growth of Nanowires, Nanostructures and Low-dimensional Structures, There will be both invited talks and contributed presentations. The conference will provide, networking opportunities and intellectual stimulation for graduate students, Post-Doctoral Fellows and all attendees. It is expected that the venue will attract a significant number of members of underrepresented groups in STEM. The proceedings will be published in a journal which receives wide electronic distribution.
该项目旨在为研究生和博士后研究员提供财政支持,以帮助支付会议注册费用和相关差旅费,这些费用将于2016年7月10日至15日在加利福尼亚州圣地亚哥举行的会议上发表演讲,该会议将讨论金属有机气相外延(MOVPE)材料和器件技术的最新进展。要解决的主题包括其他基础研究和外延工艺建模,宽带隙III族氮化物材料和器件,III-V族半导体和器件,窄带隙材料和器件,II-VI族材料和器件,纳米线的生长,纳米结构和低维结构,将邀请会谈和贡献的演讲。会议将为研究生、博士后研究员和所有与会者提供交流机会和智力刺激。预计该场地将吸引STEM中代表性不足的群体的大量成员。会议记录将在一份以电子方式广泛分发的杂志上发表。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Russell Dupuis其他文献
Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation
- DOI:
10.1038/s41598-024-83398-0 - 发表时间:
2025-01-02 - 期刊:
- 影响因子:3.900
- 作者:
Matthias Daeumer;Jae-Hyuck Yoo;Zhiyu Xu;Minkyu Cho;Marzieh Bakhtiary-Noodeh;Theeradetch Detchprohm;Yuxuan Zhang;Vijay Gopal Thirupakuzi Vangipuram;Vishank Talesara;Yibo Xu;Edward Letts;Daryl Key;Tian T. Li;Qinghui Shao;Russell Dupuis;Shyh-Chiang Shen;Wu Lu;Hongping Zhao;Tadao Hashimoto;Ted A. Laurence - 通讯作者:
Ted A. Laurence
Russell Dupuis的其他文献
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{{ truncateString('Russell Dupuis', 18)}}的其他基金
Collaborative Research: Fundamental Studies of the Properties of B-III-N Wide-Bandgap Semiconductor Alloys
合作研究:B-III-N宽带隙半导体合金性能的基础研究
- 批准号:
1410874 - 财政年份:2014
- 资助金额:
$ 0.6万 - 项目类别:
Continuing Grant
International Symposium on the Growth of III-Nitrides (ISGN: Held in Atlanta, GA May 18-22, 2014
III 族氮化物生长国际研讨会(ISGN:2014 年 5 月 18-22 日在佐治亚州亚特兰大举行
- 批准号:
1439509 - 财政年份:2014
- 资助金额:
$ 0.6万 - 项目类别:
Standard Grant
COLLABORATIVE RESEARCH: Nanobeam Lasers
合作研究:纳米束激光器
- 批准号:
1028563 - 财政年份:2010
- 资助金额:
$ 0.6万 - 项目类别:
Standard Grant
NOVEL HIGH-PERFORMANCE III-N HBTS FOR NEXT-GENERATION ENERGY-EFFICIENT SYSTEMS
适用于下一代节能系统的新型高性能 III-N HBTS
- 批准号:
0725736 - 财政年份:2007
- 资助金额:
$ 0.6万 - 项目类别:
Standard Grant
Infrared Quantum-Cascade Lasers Based Upon III-V Nitride Heterostructures
基于 III-V 族氮化物异质结构的红外量子级联激光器
- 批准号:
0439270 - 财政年份:2004
- 资助金额:
$ 0.6万 - 项目类别:
Continuing Grant
GOALI: Growth of GaSb-Related Materials and Devices by Metalorganic Chemical Vapor Deposition for Advanced Optical Fiber Communication Applications
GOALI:通过金属有机化学气相沉积生长 GaSb 相关材料和器件,用于先进光纤通信应用
- 批准号:
0439616 - 财政年份:2003
- 资助金额:
$ 0.6万 - 项目类别:
Standard Grant
Growth and Characterization of Wide-Bandgap Self-Assembled Quantum Dots for Optoelectronic Devices
用于光电器件的宽带隙自组装量子点的生长和表征
- 批准号:
0438111 - 财政年份:2003
- 资助金额:
$ 0.6万 - 项目类别:
Continuing Grant
GOALI: Growth of GaSb-Related Materials and Devices by Metalorganic Chemical Vapor Deposition for Advanced Optical Fiber Communication Applications
GOALI:通过金属有机化学气相沉积生长 GaSb 相关材料和器件,用于先进光纤通信应用
- 批准号:
0115329 - 财政年份:2001
- 资助金额:
$ 0.6万 - 项目类别:
Standard Grant
Growth and Characterization of Wide-Bandgap Self-Assembled Quantum Dots for Optoelectronic Devices
用于光电器件的宽带隙自组装量子点的生长和表征
- 批准号:
0080630 - 财政年份:2000
- 资助金额:
$ 0.6万 - 项目类别:
Continuing Grant
Infrared Quantum-Cascade Lasers Based Upon III-V Nitride Heterostructures
基于 III-V 族氮化物异质结构的红外量子级联激光器
- 批准号:
0080409 - 财政年份:2000
- 资助金额:
$ 0.6万 - 项目类别:
Continuing Grant
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