课题基金 / 基金详情

Materials and Processing Research for High-Performance Optoelectronic Devices Employing III-V Compound Semiconductor Native Oxide Layers

Materials and Processing Research for High-Performance Optoelectronic Devices Employing III-V Compound Semiconductor Native Oxide Layers
采用 III-V 族化合物半导体原生氧化物层的高性能光电器件的材料和工艺研究
批准号:
9612283
负责人:
Russell Dupuis
金额:
$79.31万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1996
资助国家:
美国
项目状态:
已结题
起止时间:
1996-09-01 至 2000-08-31

项目摘要

项目成果

Russell Dupuis的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
9612283 Dupuis This multidisciplinarv research project, overlapping the disciplines of Materials Science, Electrical Engineering, and Chemistry comprises a comprehensive approach to study the synthesis and properties of thin film native oxides in technologically important III-V semiconductors, as well as addressing the improvement of optoelectronic devices through the use of these oxides. The overall aim is to achieve greater basic understanding and subsequent development of a native oxide suitable for compound semiconductor structures to obtain comparable performance to the role and importance of SiO2 in silicon based electronics. %%% The project combines concepts and methodologies from materials science, electrical engineering, chemistry and physics with advanced electronic, spectroscopic and structural characterization tools to address forefront issues at the interfaces between these disciplines. The research will contribute basic new knowledge at a fundamental level to several aspects of materials science engineering, and optoelectronics. An important feature of the program is the integration of research and education through the training of students in fundamental interdisciplinary research areas. ***
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) XVIII, San Diego CA, July 10-15, 2016
  • 批准号:
    1639797
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.6万
  • 财政年份:
    2016
  • 负责人:
    Russell Dupuis
  • 依托单位:
Collaborative Research: Fundamental Studies of the Properties of B-III-N Wide-Bandgap Semiconductor Alloys
  • 批准号:
    1410874
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    2014
  • 负责人:
    Russell Dupuis
  • 依托单位:
International Symposium on the Growth of III-Nitrides (ISGN: Held in Atlanta, GA May 18-22, 2014
  • 批准号:
    1439509
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.5万
  • 财政年份:
    2014
  • 负责人:
    Russell Dupuis
  • 依托单位:
COLLABORATIVE RESEARCH: Nanobeam Lasers
  • 批准号:
    1028563
  • 项目类别:
    Standard Grant
  • 资助金额:
    $25.0万
  • 财政年份:
    2010
  • 负责人:
    Russell Dupuis
  • 依托单位:
国内基金
海外基金
Sirt1通过调控Gli3 processing维持SHH信号促进髓母细胞瘤的发展及机制研究
  • 批准号:
    82373900
  • 项目类别:
    面上项目
  • 资助金额:
    48万元
  • 批准年份:
    2023
  • 负责人:
    王媛
  • 依托单位:
靶向Gli3 processing调控Shh信号通路的新型抑制剂治疗儿童髓母细胞瘤及相关作用机制研究
  • 批准号:
    82104210
  • 项目类别:
    青年科学基金项目(C类)
  • 资助金额:
    30.0万元
  • 批准年份:
    2021
  • 负责人:
    丰涛
  • 依托单位: