Materials and Processing Research for High-Performance Optoelectronic Devices Employing III-V Compound Semiconductor Native Oxide Layers
Materials and Processing Research for High-Performance Optoelectronic Devices Employing III-V Compound Semiconductor Native Oxide Layers
批准号:
9612283
负责人:
Russell Dupuis
金额:
$79.31万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1996
资助国家:
美国
项目状态:
已结题
起止时间:
1996-09-01 至 2000-08-31
中文摘要
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英文摘要
9612283 Dupuis This multidisciplinarv research project, overlapping the disciplines of Materials Science, Electrical Engineering, and Chemistry comprises a comprehensive approach to study the synthesis and properties of thin film native oxides in technologically important III-V semiconductors, as well as addressing the improvement of optoelectronic devices through the use of these oxides. The overall aim is to achieve greater basic understanding and subsequent development of a native oxide suitable for compound semiconductor structures to obtain comparable performance to the role and importance of SiO2 in silicon based electronics. %%% The project combines concepts and methodologies from materials science, electrical engineering, chemistry and physics with advanced electronic, spectroscopic and structural characterization tools to address forefront issues at the interfaces between these disciplines. The research will contribute basic new knowledge at a fundamental level to several aspects of materials science engineering, and optoelectronics. An important feature of the program is the integration of research and education through the training of students in fundamental interdisciplinary research areas. ***
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International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) XVIII, San Diego CA, July 10-15, 2016
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批准号:1639797
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项目类别:Standard Grant
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资助金额:$0.6万
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财政年份:2016
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负责人:Russell Dupuis
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依托单位:
Collaborative Research: Fundamental Studies of the Properties of B-III-N Wide-Bandgap Semiconductor Alloys
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批准号:1410874
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项目类别:Continuing Grant
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资助金额:$30.0万
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财政年份:2014
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负责人:Russell Dupuis
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依托单位:
International Symposium on the Growth of III-Nitrides (ISGN: Held in Atlanta, GA May 18-22, 2014
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批准号:1439509
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项目类别:Standard Grant
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资助金额:$0.5万
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财政年份:2014
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负责人:Russell Dupuis
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依托单位:
COLLABORATIVE RESEARCH: Nanobeam Lasers
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批准号:1028563
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项目类别:Standard Grant
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资助金额:$25.0万
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财政年份:2010
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负责人:Russell Dupuis
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依托单位:
NOVEL HIGH-PERFORMANCE III-N HBTS FOR NEXT-GENERATION ENERGY-EFFICIENT SYSTEMS
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批准号:0725736
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项目类别:Standard Grant
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资助金额:$28.16万
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财政年份:2007
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负责人:Russell Dupuis
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依托单位:
Infrared Quantum-Cascade Lasers Based Upon III-V Nitride Heterostructures
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批准号:0439270
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2004
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负责人:Russell Dupuis
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依托单位:
GOALI: Growth of GaSb-Related Materials and Devices by Metalorganic Chemical Vapor Deposition for Advanced Optical Fiber Communication Applications
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批准号:0439616
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Russell Dupuis
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依托单位:
Growth and Characterization of Wide-Bandgap Self-Assembled Quantum Dots for Optoelectronic Devices
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批准号:0438111
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Russell Dupuis
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依托单位:
GOALI: Growth of GaSb-Related Materials and Devices by Metalorganic Chemical Vapor Deposition for Advanced Optical Fiber Communication Applications
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批准号:0115329
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2001
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负责人:Russell Dupuis
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依托单位:
Growth and Characterization of Wide-Bandgap Self-Assembled Quantum Dots for Optoelectronic Devices
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批准号:0080630
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项目类别:Continuing Grant
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资助金额:$86.0万
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财政年份:2000
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负责人:Russell Dupuis
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依托单位:
Infrared Quantum-Cascade Lasers Based Upon III-V Nitride Heterostructures
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批准号:0080409
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项目类别:Continuing Grant
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资助金额:$27.0万
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财政年份:2000
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负责人:Russell Dupuis
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依托单位:
Materials Growth and Processing Research for Wide-Bandgap Semiconductor Heterostructures and Devices
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批准号:9312947
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项目类别:Continuing Grant
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资助金额:$28.53万
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财政年份:1993
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负责人:Russell Dupuis
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依托单位:
国内基金
海外基金
Sirt1通过调控Gli3 processing维持SHH信号促进髓母细胞瘤的发展及机制研究
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批准号:82373900
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项目类别:面上项目
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资助金额:48万元
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批准年份:2023
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负责人:王媛
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依托单位:
靶向Gli3 processing调控Shh信号通路的新型抑制剂治疗儿童髓母细胞瘤及相关作用机制研究
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批准号:82104210
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项目类别:青年科学基金项目(C类)
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资助金额:30.0万元
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批准年份:2021
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负责人:丰涛
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依托单位: