Growth and Characterization of Wide-Bandgap Self-Assembled Quantum Dots for Optoelectronic Devices

用于光电器件的宽带隙自组装量子点的生长和表征

• 批准号: 0080630
• 负责人: Russell Dupuis
• 金额: $ 86万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-09-01 至 2004-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0080630&HistoricalAwards=false
• 关键词: Growth; Characterization; Wide; Bandgap; Self

This FRG project is a collaborative effort between researchers at U. TX, Austin, Harvard U., and U. VA. The project addresses materials science based approaches to achieving high-performance laser diodes in the high-energy visible region: (1) growth and characterization of III-P-based wide-bandgap self-assembled quantum dots(SAQD) composed of direct-bandgap ternary alloys, e.g., InxGa1-xP on GaAs substrates, and (2) growth of InxAl1-xP ( x = 0.6 to ~1.0) quantum dots on GaP substrates. These SAQD materials and lasers will be studied to generate the basic knowledge required to optimize such structures for optoelectronic applications such as light sources emitting in the green and yellow spectral regions for full-color laser displays, sources for holographic memory storage, and high-speed light sources for low-cost plastic-fiber-based optical communications systems. The research strives for fundamental insight into the physics of two-dimensionally confined systems in III-V materials. The growth and properties of III-phosphide quantum dots will be explored and the control of strain will be employed to develop an understanding of the growth of uniform QD arrays. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. Experimental tools are now available to allow atomic level observation of elementary surface processes which when better understood allow advances in fundamental science and technology. The results of this work may allow a new level of reliable control of materials growth, allowing semiconductor devices with reproducible properties to be attained in a variety of academic and commercial settings. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The project involves the collaborative work of students and faculty in Electrical and Computer Engineering, Physics, and Materials.***

这个联邦德国项目是美国大学的研究人员合作的成果。德克萨斯州奥斯汀哈佛大学，和联合弗吉尼亚该项目涉及基于材料科学的方法，以实现高能量可见光区的高性能激光二极管：（1）由直接带隙三元合金组成的III-P基宽带隙自组装量子点（SAQD）的生长和表征，例如，在GaAs衬底上生长InxGa_（1-x）P量子点;（2）在GaP衬底上生长InxAl_（1-x）P（x = 0.6 ~1.0）量子点。这些SAQD材料和激光器将进行研究，以产生优化光电应用，如在绿色和黄色光谱区域发射的光源，用于全色激光显示器，全息存储器存储源，以及低成本的塑料光纤为基础的光通信系统的高速光源等结构所需的基本知识。该研究致力于对III-V族材料中二维受限系统的物理学的基本见解。III-磷化物量子点的生长和性质将被探索和应变的控制将被用来发展均匀的量子点阵列的生长的理解。该项目解决了材料科学领域的基础研究问题，具有高度的技术相关性。现在已有实验工具，可以在原子水平上观察基本表面过程，如果能更好地了解这些过程，就可以在基础科学和技术方面取得进展。这项工作的结果可能会使材料生长的可靠控制达到新的水平，从而使具有可重复特性的半导体器件在各种学术和商业环境中获得。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。该项目涉及学生和教师在电气和计算机工程，物理和材料的协作工作。