International Symposium on the Growth of III-Nitrides (ISGN: Held in Atlanta, GA May 18-22, 2014

国际iii -氮化物生长研讨会（ISGN）将于2014年5月18日至22日在乔治亚州亚特兰大的桃树广场威斯汀酒店举行。研讨会将通过聚集不同群体的专家、研究人员和学生，促进各种类型iii -氮化物材料生长和器件技术的领先研究进展。该计划为太赫兹领域令人兴奋的突破和理解潜在的物理机制提供了科学交流和讨论的机会。讨论的主题包括氮化镓、氮化镓、氮化镓、氮化镓的体生长、氮化镓纳米结构、缺陷控制和表面效应、场效应晶体管和发光二极管等氮化镓器件。研讨会将促进主要研究人员在材料生长和器件技术方面的互动，并将重点关注这些材料及其应用的技术挑战。本次研讨会的重点内容将在全球范围内通过和摘要书。

The International Symposium on the Growth of III-Nitrides (ISGN) will be held May 18-22, 2014 at the Westin Hotel Peachtree Plaza, Atlanta, Georgia. The symposium will foster advances in the leading research on various types of III-Nitride material growth and device technology by gathering a diverse group of experts, researchers and students. The program provides the opportunity for scientific exchanges and discussions on exciting breakthroughs in the terahertz field and the understanding the underlying physical mechanisms.. Topics to be addressed include III-N Bulk growth of AlN, GaN, InN, III-N nanostructures, defect control and surface effects, III-N devices such as Filed-Effect Transistors and Light Emitting Diodes. The Symposium will promote interactions between leading researchers in material growth and device technologies and will focus on the technical challenges of these materials and their applications. The highlights of the symposium will be accessible worldwide through and Abstracts book..