International Symposium on the Growth of III-Nitrides (ISGN: Held in Atlanta, GA May 18-22, 2014

III-氮化物生长国际研讨会（ISGN）将于2014年5月18日至22日在格鲁吉亚亚特兰大桃树广场威斯汀酒店举行。研讨会将促进各种类型的III族氮化物材料生长和器件技术的领先研究的进展 通过召集不同的专家、研究人员和学生。该计划为太赫兹领域令人兴奋的突破和理解潜在的物理机制提供了科学交流和讨论的机会。要解决的主题包括氮化铝，氮化镓，氮化铟，III-N纳米结构，缺陷控制和表面效应，III-N器件，如场效应晶体管和发光二极管的III-N体生长。研讨会将促进材料生长和器件技术领域领先研究人员之间的互动，并将重点关注这些材料及其应用的技术挑战。研讨会的重点将通过《摘要》一书在全世界范围内提供。

The International Symposium on the Growth of III-Nitrides (ISGN) will be held May 18-22, 2014 at the Westin Hotel Peachtree Plaza, Atlanta, Georgia. The symposium will foster advances in the leading research on various types of III-Nitride material growth and device technology by gathering a diverse group of experts, researchers and students. The program provides the opportunity for scientific exchanges and discussions on exciting breakthroughs in the terahertz field and the understanding the underlying physical mechanisms.. Topics to be addressed include III-N Bulk growth of AlN, GaN, InN, III-N nanostructures, defect control and surface effects, III-N devices such as Filed-Effect Transistors and Light Emitting Diodes. The Symposium will promote interactions between leading researchers in material growth and device technologies and will focus on the technical challenges of these materials and their applications. The highlights of the symposium will be accessible worldwide through and Abstracts book..