International Symposium on the Growth of III-Nitrides (ISGN: Held in Atlanta, GA May 18-22, 2014

III-硝化物生长国际研讨会(ISGN)将于2014年5月18日至22日在佐治亚州亚特兰大的威斯汀酒店桃树广场举行。研讨会将通过聚集不同的专家、研究人员和学生，促进在各种类型的III-氮化物材料生长和器件技术方面的领先研究的进展。该计划为科学交流和讨论太赫兹领域令人兴奋的突破和了解潜在的物理机制提供了机会。将讨论的主题包括AlN，GaN，InN，III-N纳米结构的III-N体相生长，缺陷控制和表面效应，III-N器件，如场效应晶体管和发光二极管。研讨会将促进材料生长和器件技术方面的领先研究人员之间的互动，并将重点关注这些材料及其应用的技术挑战。研讨会的亮点将通过《文摘》一书在全球范围内公布。

The International Symposium on the Growth of III-Nitrides (ISGN) will be held May 18-22, 2014 at the Westin Hotel Peachtree Plaza, Atlanta, Georgia. The symposium will foster advances in the leading research on various types of III-Nitride material growth and device technology by gathering a diverse group of experts, researchers and students. The program provides the opportunity for scientific exchanges and discussions on exciting breakthroughs in the terahertz field and the understanding the underlying physical mechanisms.. Topics to be addressed include III-N Bulk growth of AlN, GaN, InN, III-N nanostructures, defect control and surface effects, III-N devices such as Filed-Effect Transistors and Light Emitting Diodes. The Symposium will promote interactions between leading researchers in material growth and device technologies and will focus on the technical challenges of these materials and their applications. The highlights of the symposium will be accessible worldwide through and Abstracts book..