High-Speed Scanning Probe Microscopy of Semiconductor Nanostructures

半导体纳米结构的高速扫描探针显微镜

• 批准号: 9529631
• 负责人: Dror Sarid
• 金额: $ 5万
• 依托单位: University of Arizona
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-09-15 至 1997-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9529631&HistoricalAwards=false
• 关键词: Speed; Scanning; Probe; Microscopy; Semiconductor

9529631 Sarid This proposal describe a research plan to upgrade the capability of an existing UHV-STM systems to study the time-dependent response of the local density of states (LDOS) for a variety of species adsorbed on metal and semiconductor nanostructures. The PI proposes to use fast lasers for the photoexcitation of electron-hole pairs in the semiconductor nanostructures. The photoexcited carriers will modify the LDOS of the semiconductor and the carrier decay will be measured via the surface photovoltage generated. In particular, the temporal response of the LDOS on an around atoms and molecular adsorbed on metal and semiconductor surfaces will be examined with sub-nanometer and sub-nanosecond resolution. The modification of UHV-STM equipment will permit the study of the LDOS in the vicinity of the adsorbed molecules and determine the nature of their bonding. The research will shed light on the intricate bonding of molecules to surfaces from both the spatial and temporal points of view. ***

9529631 Sarid 该提案描述了一项研究计划，旨在升级现有 UHV-STM 系统的能力，以研究吸附在金属和半导体纳米结构上的各种物质的局部态密度 (LDOS) 的时间依赖性响应。 PI 建议使用快速激光器来光激发半导体纳米结构中的电子空穴对。 光激发载流子将改变半导体的 LDOS，并且将通过产生的表面光电压来测量载流子衰减。 特别是，将以亚纳米和亚纳秒分辨率检查 LDOS 对吸附在金属和半导体表面上的周围原子和分子的时间响应。 UHV-STM 设备的改造将允许研究吸附分子附近的 LDOS 并确定它们的键合性质。 该研究将从空间和时间的角度揭示分子与表面的复杂结合。 ***