U.S.-India Cooperative Research: Photoinduced Degradation in Doped Hydrogenated Amorphous Silicon, Award in US and Indian Currency

美印合作研究：掺杂氢化非晶硅的光致降解，荣获美国和印度货币奖

• 批准号: 9634604
• 负责人: P. Craig Taylor
• 金额: $ 3.49万
• 依托单位: University of Utah
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-09-01 至 2000-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9634604&HistoricalAwards=false
• 关键词: U.S.; India; Cooperative; Research; Photoinduced

9634604 Taylor Description: The proposed research "Photoinduced Degradation in Doped Hydrogenated Amorphous Silicon (a-SiLH)" is a collaboration in materials research between Professor Craig Taylor, University of Utah and Professors P.C. Mathur and R.M. Mahra, University of Delhi. This proposal adds an international component to Professor Taylor's research on the properties of disordered semiconductors and thin-film photovaltaic materials. Taylor has made significant progress in understanding metal chalcogenide glasses as a model system linking tetrahedrally-coordinated amorphous materials and traditional chalcogenide glasses. As a logical extension, this proposal will concentrate on photo-induced degradation and transport properties of n-type doped silicon- sulfur alloys. Scope: This is a new collaboration linking two university research laboratories in the US and India. The research seeks to understand metastable defects in a-Si:H that are crucial for optimum performance of solar cells. The research combines US expertise on growth, optical and magnetic resonance characterization and Indian expertise on transport and structural measurements. The research plan is designed to make progress on ultimately improving the stability of devices such as thin-film transistors and solar cells. ***

小行星9634604 产品描述：拟议的研究“掺杂氢化非晶硅（a-SiLH）中的光致降解”是犹他州大学克雷格泰勒教授和P.C. Mathur和R.M. Mahra，德里大学。 这一提议为泰勒教授关于无序半导体和薄膜光伏材料性质的研究增加了一个国际组成部分。 泰勒在理解金属硫属玻璃作为连接四面体配位非晶材料和传统硫属玻璃的模型系统方面取得了重大进展。 作为一个合理的扩展，这个建议将集中在n型掺杂硅硫合金的光致降解和输运性质。 范围：这是一项新的合作，将美国和印度的两所大学研究实验室联系起来。 该研究旨在了解a-Si：H中的亚稳态缺陷，这些缺陷对太阳能电池的最佳性能至关重要。 该研究结合了美国在增长，光学和磁共振表征方面的专业知识以及印度在运输和结构测量方面的专业知识。 该研究计划旨在最终提高薄膜晶体管和太阳能电池等器件的稳定性。 ***