Localized Electronic States in Amorphous Semiconductors

非晶半导体中的局域电子态

基本信息

  • 批准号:
    9403806
  • 负责人:
  • 金额:
    $ 33万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    1994
  • 资助国家:
    美国
  • 起止时间:
    1994-07-15 至 1998-04-30
  • 项目状态:
    已结题

项目摘要

9403806 Taylor Technical abstract: Metal chalcogenide glasses are a model system that provides a link between the tetrahedrally-coordinated amorphous materials, such as hydrogenated amorphous silicon and the traditional chalcogenide glasses, such as selenium or arsenic selenide. The research will answer questions concerning the structure, defects and doping mechanisms in metal chalcogenides glasses where both the metal and chalcogenide atoms can be tetrahedrally coordinated. Important questions concern the microscopic origins of optically-induced paramagnetidm, of photodarkening, and potential doping mechanisms. The specific objectives are (1) to understand the details of the local structural order in metal-containing chalcogenide glasses, (2) to study the intrinsic defects in metal chalcogenide glasses as the structure is changed from low to high average coordination number, (3) to understand the p-type doping mechanism in the Cu-As-Se(S) systems, and (4) to further the understanding of the photodarkening process and the defects that contribute to photodarkening, especially those defects that involve optical anisotropies. Non-technical abstract: In order for semiconductors to be useful as electronic devices on must be able to change their electrical properties dramatically by a process called "doping". In most semiconductors where the atoms are not well ordered (amorphous semiconductors) it has generally been assumed that doping is not possible. We have demonstrated the feasibility of inefficient doping in a class of amorphous semiconductors containing sulfur. Selenium or tellurium and are investigating ways of improving the doping and expanding our understanding of the process. Amorphous semiconductors also have the property that they are metastable and that their electronic and optical characteristics can change. These metastabilities are sometimes deleterious to device performance, as in the degradation of thin-film transistors with time, but so metimes they are useful, as in the use for optically- induced index changes in inorganic photoresists. These metastabilities will be studied to understand the basic microscopic mechanism essential for the design of useful devices. ***
9403806 Taylor 技术摘要:金属硫族化物玻璃是一种模型系统,它提供了四面体配位非晶材料(例如氢化非晶硅)和传统硫族化物玻璃(例如硒或硒化砷)之间的联系。 该研究将回答有关金属硫族化物玻璃的结构、缺陷和掺杂机制的问题,其中金属和硫族化物原子都可以四面体配位。 重要的问题涉及光诱导顺磁性、光暗化的微观起源以及潜在的掺杂机制。 具体目标是(1)了解含金属硫族化物玻璃中局部结构有序的细节,(2)研究金属硫族化物玻璃结构从低平均配位数变为高平均配位数时的固有缺陷,(3)了解Cu-As-Se(S)体系中的p型掺杂机制,以及(4)进一步了解光暗化过程和缺陷 有助于光暗化,尤其是那些涉及光学各向异性的缺陷。 非技术摘要:为了使半导体能够用作电子设备,必须能够通过称为“掺杂”的过程显着改变其电性能。 在大多数原子排列不整齐的半导体(非晶半导体)中,通常认为掺杂是不可能的。 我们已经证明了在一类含硫非晶半导体中进行低效掺杂的可行性。 硒或碲正在研究改进掺杂并扩大我们对该过程的理解的方法。 非晶半导体还具有亚稳态的特性,并且其电子和光学特性可以改变。 这些亚稳定性有时对器件性能有害,例如薄膜晶体管随时间的退化,但有时它们是有用的,例如用于无机光刻胶中光致折射率变化。 将研究这些亚稳定性,以了解有用器件设计所必需的基本微观机制。 ***

项目成果

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会议论文数量(0)
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P. Craig Taylor其他文献

Optical properties of Ge–Sb–Te chalcogenides
  • DOI:
    10.1016/j.jnoncrysol.2007.10.088
  • 发表时间:
    2008-05-01
  • 期刊:
  • 影响因子:
  • 作者:
    Tong Ju;John Viner;Heng Li;P. Craig Taylor
  • 通讯作者:
    P. Craig Taylor

P. Craig Taylor的其他文献

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{{ truncateString('P. Craig Taylor', 18)}}的其他基金

International Conference on Exotic Forms of Silicon
硅的奇异形式国际会议
  • 批准号:
    1521805
  • 财政年份:
    2015
  • 资助金额:
    $ 33万
  • 项目类别:
    Standard Grant
Renewable Energy Materials Research Science and Engineering Center
可再生能源材料研究科学与工程中心
  • 批准号:
    0820518
  • 财政年份:
    2008
  • 资助金额:
    $ 33万
  • 项目类别:
    Cooperative Agreement
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
  • 批准号:
    0702351
  • 财政年份:
    2007
  • 资助金额:
    $ 33万
  • 项目类别:
    Continuing Grant
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
  • 批准号:
    0307594
  • 财政年份:
    2003
  • 资助金额:
    $ 33万
  • 项目类别:
    Continuing Grant
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
  • 批准号:
    0073004
  • 财政年份:
    2000
  • 资助金额:
    $ 33万
  • 项目类别:
    Standard Grant
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
  • 批准号:
    9704946
  • 财政年份:
    1997
  • 资助金额:
    $ 33万
  • 项目类别:
    Continuing Grant
U.S.-India Cooperative Research: Photoinduced Degradation in Doped Hydrogenated Amorphous Silicon, Award in US and Indian Currency
美印合作研究:掺杂氢化非晶硅的光致降解,荣获美国和印度货币奖
  • 批准号:
    9634604
  • 财政年份:
    1996
  • 资助金额:
    $ 33万
  • 项目类别:
    Standard Grant
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
  • 批准号:
    9001596
  • 财政年份:
    1990
  • 资助金额:
    $ 33万
  • 项目类别:
    Continuing Grant
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
  • 批准号:
    8615217
  • 财政年份:
    1987
  • 资助金额:
    $ 33万
  • 项目类别:
    Continuing Grant
Localized Electronic States in Amorphous Semiconductors (Materials Research)
非晶半导体中的局域电子态(材料研究)
  • 批准号:
    8304471
  • 财政年份:
    1983
  • 资助金额:
    $ 33万
  • 项目类别:
    Continuing Grant

相似海外基金

Localized electronic states of defect structures in graphene
石墨烯缺陷结构的局域电子态
  • 批准号:
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  • 财政年份:
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Localized Electronic States in Amorphous Semiconductors
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    Continuing Grant
New methods for electronic excited states of solids using localized basis
使用局域基研究固体电子激发态的新方法
  • 批准号:
    14540368
  • 财政年份:
    2002
  • 资助金额:
    $ 33万
  • 项目类别:
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U.S.-Chile Cooperative Research: Theoretical Studies of Extended and Localized Electronic States in Semiconductors and in their Low-Dimensional Structures
美国-智利合作研究:半导体及其低维结构中扩展和定域电子态的理论研究
  • 批准号:
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Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
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Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
  • 批准号:
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  • 财政年份:
    1997
  • 资助金额:
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Developement of In-situ Modulation Spectroscopy for Atomically Localized Electronic States
原子局域电子态原位调制光谱学的发展
  • 批准号:
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  • 财政年份:
    1993
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半导体量子盒结构和人工局域态(超级施主)的电子特性和跃迁过程
  • 批准号:
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  • 财政年份:
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    $ 33万
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Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
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