Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
基本信息
- 批准号:9001596
- 负责人:
- 金额:$ 32.52万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1990
- 资助国家:美国
- 起止时间:1990-05-01 至 1993-10-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Experimental investigations of the properties of amorphous semiconductors, especially metal-chalcogenide glasses, with the intention of understanding the defects which occur in these materials. Also to be addressed are questions regarding the microscopic origins of optically-induced paramagnetism and photodarkening in semiconducting chalcogenide glasses. A broadly-based experimental program will be applied, including methods such as magnetic resonance spectroscopy, optical spectroscopies, combinations of optical and magnetic resonance techniques, and electrical measurements.
实验研究非晶半导体,特别是金属硫系玻璃的性质,目的是了解这些材料中发生的缺陷。还将讨论有关半导体硫系玻璃中光学诱导顺磁性和光变暗的微观起源的问题。将应用基础广泛的实验程序,包括磁共振光谱、光谱学、光学和磁共振技术的组合以及电测量等方法。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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P. Craig Taylor其他文献
Optical properties of Ge–Sb–Te chalcogenides
- DOI:
10.1016/j.jnoncrysol.2007.10.088 - 发表时间:
2008-05-01 - 期刊:
- 影响因子:
- 作者:
Tong Ju;John Viner;Heng Li;P. Craig Taylor - 通讯作者:
P. Craig Taylor
P. Craig Taylor的其他文献
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{{ truncateString('P. Craig Taylor', 18)}}的其他基金
International Conference on Exotic Forms of Silicon
硅的奇异形式国际会议
- 批准号:
1521805 - 财政年份:2015
- 资助金额:
$ 32.52万 - 项目类别:
Standard Grant
Renewable Energy Materials Research Science and Engineering Center
可再生能源材料研究科学与工程中心
- 批准号:
0820518 - 财政年份:2008
- 资助金额:
$ 32.52万 - 项目类别:
Cooperative Agreement
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
- 批准号:
0702351 - 财政年份:2007
- 资助金额:
$ 32.52万 - 项目类别:
Continuing Grant
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
- 批准号:
0307594 - 财政年份:2003
- 资助金额:
$ 32.52万 - 项目类别:
Continuing Grant
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
- 批准号:
0073004 - 财政年份:2000
- 资助金额:
$ 32.52万 - 项目类别:
Standard Grant
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
- 批准号:
9704946 - 财政年份:1997
- 资助金额:
$ 32.52万 - 项目类别:
Continuing Grant
U.S.-India Cooperative Research: Photoinduced Degradation in Doped Hydrogenated Amorphous Silicon, Award in US and Indian Currency
美印合作研究:掺杂氢化非晶硅的光致降解,荣获美国和印度货币奖
- 批准号:
9634604 - 财政年份:1996
- 资助金额:
$ 32.52万 - 项目类别:
Standard Grant
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
- 批准号:
9403806 - 财政年份:1994
- 资助金额:
$ 32.52万 - 项目类别:
Continuing Grant
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
- 批准号:
8615217 - 财政年份:1987
- 资助金额:
$ 32.52万 - 项目类别:
Continuing Grant
Localized Electronic States in Amorphous Semiconductors (Materials Research)
非晶半导体中的局域电子态(材料研究)
- 批准号:
8304471 - 财政年份:1983
- 资助金额:
$ 32.52万 - 项目类别:
Continuing Grant
相似海外基金
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Localized Electronic States in Amorphous Semiconductors
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Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
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- 批准号:
14540368 - 财政年份:2002
- 资助金额:
$ 32.52万 - 项目类别:
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U.S.-Chile Cooperative Research: Theoretical Studies of Extended and Localized Electronic States in Semiconductors and in their Low-Dimensional Structures
美国-智利合作研究:半导体及其低维结构中扩展和定域电子态的理论研究
- 批准号:
0100835 - 财政年份:2001
- 资助金额:
$ 32.52万 - 项目类别:
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Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
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0073004 - 财政年份:2000
- 资助金额:
$ 32.52万 - 项目类别:
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Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
- 批准号:
9704946 - 财政年份:1997
- 资助金额:
$ 32.52万 - 项目类别:
Continuing Grant
Localized Electronic States in Amorphous Semiconductors
非晶半导体中的局域电子态
- 批准号:
9403806 - 财政年份:1994
- 资助金额:
$ 32.52万 - 项目类别:
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Developement of In-situ Modulation Spectroscopy for Atomically Localized Electronic States
原子局域电子态原位调制光谱学的发展
- 批准号:
05555088 - 财政年份:1993
- 资助金额:
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Electronic properties and transition processes in semiconductor quantum box structures and artificially localized states (super-donors)
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- 批准号:
04402030 - 财政年份:1992
- 资助金额:
$ 32.52万 - 项目类别:
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