International Conference on Exotic Forms of Silicon

提案编号：1521805机构：科罗拉多矿业学院首席研究员：P. Craig taylor标题：硅的奇异形式国际会议硅的奇异形式国际会议将于2015年7月13日至17日在科罗拉多州戈尔顿的科罗拉多矿业学院举行。这次会议将讨论创造和生产独特形式硅的新方法，硅是地球上丰富的一种元素。使未来在微电子和可再生能源生产领域取得突破。15位世界硅研究领域的领导人已经同意参加这次会议。会议还将支持20名研究生和博士后研究助理的参与，他们被定位为该领域的未来领导者。硅是一种储量丰富的无毒元素，是半导体器件的基础材料。如果硅（Si）的替代分子形式可以以高纯度的薄膜形式制成，那么这些新的硅材料可能具有推动未来50年微电子、光电和能量收集设备发展的巨大潜力。本次会议将汇集15位国际知名的硅材料研究人员，主要来自美国，讨论共同的问题和潜在的变革性突破，以实现下一代微电子、光电子和能量收集材料和设备，并推动美国在这一领域的创新。要讨论的结构包括：1)在高压下形成的在环境压力下亚稳的硅的形式；2)单层硅（硅烯）；3)包合物Si，已被研究用于超导和热电性能，但尚未用于半导体应用；4)纳米结构形式的硅（纳米点和纳米线），包括由金刚石硅组成的硅；5)多孔硅。会议还将为20名研究生和博士后研究助理的参与提供支持，其中包括来自菲斯克大学代表性不足群体的学生，作为与科罗拉多矿业学院可再生能源材料研究科学与工程中心合作关系的一部分。

Proposal Number: 1521805Institution: Colorado School of MinesPrincipal Investigator: P. Craig TaylorTitle: International Conference on Exotic Forms of SiliconThe International Conference on Exotic Forms of Silicon will be held during July 13-17, 2015 at the Colorado School of Mines in Golden, Colorado. This conference will discuss new ways to create and produce unique forms of silicon, an element abundant in the earth?s crust, to enable future breakthroughs in the areas of microelectronics and renewable energy production. Fifteen world leaders in silicon research have agreed to participate in this conference. The conference will also support the participation of 20 graduate students and postdoctoral research associates who are positioned to be future leaders of this field.Silicon is an earth-abundant, non-toxic element that the base material for semiconducting devices. If alternative molecular forms of silicon (Si) can be made with high purity in thin film form, then these new silicon materials may have significant potential to drive the next 50 years of microelectronic, optoelectronic, and energy harvesting device development. This conference will bring together 15 internationally prominent researchers in silicon materials research, mostly based in the United States, to discuss common problems and potential transformative breakthroughs to enable the next generation of microelectronic, optoelectronic, and energy harvesting materials and devices, and to drive US-led innovation in this area. Structures to be discussed include: 1) forms of silicon created under high pressure that are metastable at ambient pressure; 2) single layers of Si (silicene); 3) clathrate Si, which has been studied for superconducting and thermoelectric properties but not for semiconductor applications; 4) nanostructured forms of Si (nanodots and nanowires), including those composed of diamond Si; and 5) porous Si. The conference will also provide support for the participation of 20 graduate students and postdoctoral research associates, including student from under-represented groups at Fisk University, as part of a collaborative relationship with the Renewable Energy Materials Research Science and Engineering Center at the Colorado School of Mines.