International Conference on Exotic Forms of Silicon
International Conference on Exotic Forms of Silicon
批准号:
1521805
负责人:
P. Craig Taylor
金额:
$2.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2015
资助国家:
美国
项目状态:
已结题
起止时间:
2015-03-15 至 2016-02-29
中文摘要
提案编号:1521805机构:科罗拉多矿业学院首席研究员:P.Craig Taylor标题:奇异硅国际会议将于2015年7月13日至17日在科罗拉多州戈尔德市科罗拉多矿业学院举行。这次会议将讨论创造和生产独特形式的硅的新方法,硅是地球上丰富的元素-S地壳,以使未来在微电子和可再生能源生产领域取得突破。15位硅研究领域的世界领先者已同意参加这次会议。会议还将支持20名研究生和博士后研究助理参加,他们有望成为该领域的未来领导者。硅是一种富含稀土的无毒元素,是半导体设备的基础材料。如果替代分子形式的硅(Si)能够以薄膜的形式获得高纯度,那么这些新的硅材料可能具有巨大的潜力来推动未来50年微电子、光电子和能量采集设备的发展。本次会议将汇聚15位硅材料研究领域的国际知名研究人员,他们大多在美国,讨论共同的问题和潜在的变革性突破,以使下一代微电子、光电子和能量收集材料和设备成为可能,并推动美国在该领域的创新。要讨论的结构包括:1)在高压下产生的在常压下处于亚稳定状态的硅的形式;2)单层硅(硅烯);3)笼状硅,其已被研究用于超导和热电性能,但未用于半导体应用;4)纳米结构形式的硅(纳米点和纳米线),包括由钻石硅组成的形式;以及5)多孔硅。作为与科罗拉多矿业学院可再生能源材料研究科学与工程中心合作关系的一部分,此次会议还将为20名研究生和博士后研究助理提供支持,其中包括来自菲斯克大学代表性不足群体的学生。
英文摘要
Proposal Number: 1521805Institution: Colorado School of MinesPrincipal Investigator: P. Craig TaylorTitle: International Conference on Exotic Forms of SiliconThe International Conference on Exotic Forms of Silicon will be held during July 13-17, 2015 at the Colorado School of Mines in Golden, Colorado. This conference will discuss new ways to create and produce unique forms of silicon, an element abundant in the earth?s crust, to enable future breakthroughs in the areas of microelectronics and renewable energy production. Fifteen world leaders in silicon research have agreed to participate in this conference. The conference will also support the participation of 20 graduate students and postdoctoral research associates who are positioned to be future leaders of this field.Silicon is an earth-abundant, non-toxic element that the base material for semiconducting devices. If alternative molecular forms of silicon (Si) can be made with high purity in thin film form, then these new silicon materials may have significant potential to drive the next 50 years of microelectronic, optoelectronic, and energy harvesting device development. This conference will bring together 15 internationally prominent researchers in silicon materials research, mostly based in the United States, to discuss common problems and potential transformative breakthroughs to enable the next generation of microelectronic, optoelectronic, and energy harvesting materials and devices, and to drive US-led innovation in this area. Structures to be discussed include: 1) forms of silicon created under high pressure that are metastable at ambient pressure; 2) single layers of Si (silicene); 3) clathrate Si, which has been studied for superconducting and thermoelectric properties but not for semiconductor applications; 4) nanostructured forms of Si (nanodots and nanowires), including those composed of diamond Si; and 5) porous Si. The conference will also provide support for the participation of 20 graduate students and postdoctoral research associates, including student from under-represented groups at Fisk University, as part of a collaborative relationship with the Renewable Energy Materials Research Science and Engineering Center at the Colorado School of Mines.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Renewable Energy Materials Research Science and Engineering Center
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批准号:0820518
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项目类别:Cooperative Agreement
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资助金额:$697.5万
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财政年份:2008
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负责人:P. Craig Taylor
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依托单位:
Localized Electronic States in Amorphous Semiconductors
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批准号:0702351
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2007
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负责人:P. Craig Taylor
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依托单位:
Localized Electronic States in Amorphous Semiconductors
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批准号:0307594
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项目类别:Continuing Grant
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资助金额:$33.3万
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财政年份:2003
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负责人:P. Craig Taylor
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依托单位:
Localized Electronic States in Amorphous Semiconductors
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批准号:0073004
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2000
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负责人:P. Craig Taylor
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依托单位:
Localized Electronic States in Amorphous Semiconductors
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批准号:9704946
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项目类别:Continuing Grant
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资助金额:$30.0万
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财政年份:1997
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负责人:P. Craig Taylor
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依托单位:
U.S.-India Cooperative Research: Photoinduced Degradation in Doped Hydrogenated Amorphous Silicon, Award in US and Indian Currency
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批准号:9634604
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项目类别:Standard Grant
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资助金额:$3.49万
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财政年份:1996
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负责人:P. Craig Taylor
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依托单位:
Localized Electronic States in Amorphous Semiconductors
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批准号:9403806
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项目类别:Continuing Grant
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资助金额:$33.0万
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财政年份:1994
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负责人:P. Craig Taylor
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依托单位:
Localized Electronic States in Amorphous Semiconductors
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批准号:9001596
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项目类别:Continuing Grant
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资助金额:$32.52万
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财政年份:1990
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负责人:P. Craig Taylor
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依托单位:
Localized Electronic States in Amorphous Semiconductors
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批准号:8615217
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项目类别:Continuing Grant
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资助金额:$36.33万
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财政年份:1987
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负责人:P. Craig Taylor
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依托单位:
Localized Electronic States in Amorphous Semiconductors (Materials Research)
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批准号:8304471
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项目类别:Continuing Grant
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资助金额:$39.42万
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财政年份:1983
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负责人:P. Craig Taylor
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依托单位:
海外基金