Localized Electronic States in Amorphous Semiconductors

非晶半导体中的局域电子态

• 批准号: 9704946
• 负责人: P. Craig Taylor
• 金额: $ 30万
• 依托单位: University of Utah
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-08-01 至 2001-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9704946&HistoricalAwards=false
• 关键词: Localized; Electronic; States; Amorphous; Semiconductors

9704946 Taylor This is a renewal project for the study of the electronic and structural properties of disordered semiconductors. This research will answer questions concerning the structure, defects and doping mechanisms in Group IV chalcogenide glasses at low chalcogen concentrations and in metal chalcogenide glasses at high metal concentrations. A second important component of the research will answer questions concerning the microscopic origins of optically- induced paramagnetism and of photodarkening in chalcogenide glasses, especially those in the two model systems mentioned above. The scientific approach involves a broadly based program that utilizes several growth techniques, magnetic resonance spectroscopy, optical spectroscopies, various combinations of optical and magnetic resonance techniques, and electrical measurements. The specific objectives are (1) to understand details of the local order, (2) to study the intrinsic defects, and their associated metastabilities, as a function of average coordination number, and (4) to identify the defects that contribute to photodarkening. %%% This is a renewal proposal for a continuing study of amorphous semiconductors. Amorphous semiconductors provide inexpensive alternatives to crystalline semiconductors for many electronic applications. One important example is the use of amorphous silicon for the switches (thin-film transistors) in flat-panel displays for personal computers and flat television screens. The use of these materials is hindered by changes that occur with time in the various electronic or optical devices that are currently manufactured. The information gained in this research will greatly increase our understanding of the behavior of electrons which are the carriers of electrical current. This information will confirm or refute specific models that have been developed to apply generally to all amorphous semiconductors. For example, the most important property of semiconductors that mak es them useful as switches of electricity is the ability to change the electrical conductivity dramatically via a process known as doping. This research will result in a more general understanding of doping mechanisms in amorphous semiconductors - an understanding that can eventually be used to manufacture more reliable devices. ***

9704946 Taylor 这是一个研究无序半导体的电子和结构特性的更新项目。 这项研究将回答有关低硫族元素浓度下的 IV 族硫族化物玻璃和高金属浓度下的金属硫族化物玻璃的结构、缺陷和掺杂机制的问题。 该研究的第二个重要组成部分将回答有关硫族化物玻璃中光致顺磁性和光暗化的微观起源的问题，特别是上述两个模型系统中的问题。 科学方法涉及一个基础广泛的计划，该计划利用了多种生长技术、磁共振光谱、光学光谱、光学和磁共振技术的各种组合以及电测量。 具体目标是（1）了解局部秩序的细节，（2）研究内在缺陷及其相关的亚稳定性（作为平均配位数的函数），以及（4）识别导致光暗化的缺陷。 %%% 这是非晶半导体持续研究的更新提案。 非晶半导体为许多电子应用提供了晶体半导体的廉价替代品。 一个重要的例子是在个人电脑和平板电视屏幕的平板显示器中使用非晶硅作为开关（薄膜晶体管）。 目前制造的各种电子或光学设备随时间发生的变化阻碍了这些材料的使用。 这项研究中获得的信息将极大地增加我们对作为电流载体的电子行为的理解。 该信息将证实或反驳已开发的普遍适用于所有非晶半导体的特定模型。 例如，半导体最重要的特性是能够通过一种称为掺杂的过程显着改变电导率，这使得半导体可以用作电力开关。 这项研究将使人们对非晶半导体的掺杂机制有更全面的了解，这种了解最终可用于制造更可靠的器件。 ***