The Effect of Molecular Orientation and Impact Parameter Upon Activated Associative Desorption and Chemisorption
The Effect of Molecular Orientation and Impact Parameter Upon Activated Associative Desorption and Chemisorption
批准号:
9200468
负责人:
Andrew Kummel
金额:
$26.65万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-04-01 至 1995-03-31
中文摘要
这个研究项目,支持在分析和表面 化学计划,解决了详细的动力学问题 气体与表面的相互作用。 研究的目标 是为了了解 简单双原子分子的解离化学吸附,以及 阱中吸附原子的复合和脱附 固体表面的特征。 速度分辨,极化 灵敏多光子电离探测 双原子分子和由原子产生的解吸分子 将进行重组。 小说研究 单能、排列试剂的化学吸附也将 追求。 %%% 表面分子的解离以及重组 和分子从表面的解吸,是主要的 这些基本过程构成了一系列重要的 技术,包括催化,腐蚀和电子 器件制造 本研究项目开发并应用于 详细动力学研究的最新方法 这些基本的过程。 所得到的资料 这些研究对发展我们的基础设施至关重要。 了解这些关键技术。
英文摘要
This research project, supported in the Analytical and Surface Chemistry Program, addresses questions of the detailed dynamics of gas-surface interactions. The objectives of the research are to develop an understanding of the detailed dynamics of dissociative chemisorption of simple diatomic molecules, and the recombination and desorption of adsorbed atoms from well characterized solid surfaces. Velocity resolved, polarization sensitive multi-photon ionization detection of scattered diatomic molecules and desorbed molecules resulting from atom recombination will be carried out. Novel studies of chemisorption of monoenergetic, aligned reagents will also be pursued. %%% Dissociation of molecules on surfaces, as well as recombination and desorption of molecules from the surface, are the principal elementary processes which underlie a wide range of important technologies, including catalysis, corrosion, and electronic device fabrication. This research project develops and applies state-of-the-art methods to the study of the detailed dynamics of these elementary processes. The information gained from these studies is essential in developing our basic understanding of these critical technologies.
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财政年份:2003
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ITR: Materials for InAs MOSFETs: The Enabling Transistor for Low Power, 100 GHz+ Information Transfer and Processing
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批准号:0312255
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财政年份:2003
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Binding, Electronic Structure, and Growth of a Passive Interface: Ga203/GaAs(100)
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批准号:9985801
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资助金额:$53.78万
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财政年份:2000
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依托单位:
Energy Release, Chemical Selectivity, and Stereochemistry of Interhalogen Reactions with Low Work Function Surfaces
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批准号:0074813
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资助金额:$37.0万
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财政年份:2000
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负责人:Andrew Kummel
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依托单位:
Remote Dissociation of Halogens and Interhalogens onto Low Work Function Surfaces
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批准号:9700546
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Halogen Passivation of GaAs (100)
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资助金额:$52.29万
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财政年份:1996
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负责人:Andrew Kummel
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依托单位:
Uniform Monolayer Pealing by Cyclic Etching of Gallium Arsenide (100) and Silicon (100) Surfaces
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批准号:9307259
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项目类别:Continuing Grant
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资助金额:$26.5万
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财政年份:1993
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负责人:Andrew Kummel
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依托单位:
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批准号:8813805
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项目类别:Continuing Grant
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资助金额:$27.36万
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财政年份:1989
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负责人:Andrew Kummel
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依托单位:
国内基金
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