Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors

四面体配位半导体中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱

• 批准号: 9800858
• 负责人: Anant Ramdas
• 金额: $ 33万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-09-01 至 2002-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9800858&HistoricalAwards=false
• 关键词: Raman; Brillouin; Infrared; Modulation; Spectroscopy

9800858Ramdas This research by Professors A.K. Ramdas and S. Rodriguez of the Department of Physics of Purdue University is focused on the investigation of novel spectroscopic phenomena exhibited by a range of tetrahedrally coordinated semiconductors which share common features in their atomic architecture, lattice dynamics, and electronic band structures. A rich program of investigations will be pursued, including the study of the nature of the electronic states of donor-bound electrons and acceptor-bound holes in isotopically controlled diamonds, in silicon carbide polytypes, and in II-VI compound semiconductors by Fourier transform infrared (FTIR), Raman, and photoluminescence spectroscopy. Also piezo- and magneto-spectroscopy will be used to deduce the site symmetry of the impurity, and the degeneracies, deformation potential constants, and g-factors characteristic of its bound states. Further, localized vibrational and gap modes of isoelectronic and compensated impurities in II-VIs, I-III-VI2, and II-IV-V2 chalcopyrites will be studied by FTIR as are the sp-d and d-d exchange interactions as revealed in the magnetic excitations in the II-VI and chalcopyrite based diluted magnetic semiconductors. These and other phenomena and systems constitute a wide ranging research program whose contributions to various areas of contemporary solid state physics and materials science will aid in our understanding of the fundamental behavior of novel materials and assist in their incorporation in varied technological devices. %%% This research by Professors A.K. Ramdas and S. Rodriguez of the Department of Physics of Purdue University is focused on the investigation of novel spectroscopic phenomena exhibited by a range of tetrahedrally coordinated semiconductors which share common features in their atom ic architecture, lattice dynamics, and electronic band structures. A rich program of investigations will be pursued, including the study of the nature of the electronic states of donor-bound electrons and acceptor-bound holes in isotopically controlled diamonds, in silicon carbide polytypes, and in II-VI compound semiconductors by Fourier transform infrared (FTIR), Raman, and photoluminescence spectroscopy. Also piezo- and magneto-spectroscopy will be used to deduce the site symmetry of the impurity, and the degeneracies, deformation potential constants, and g-factors characteristic of its bound states. Further, localized vibrational and gap modes of isoelectronic and compensated impurities in II-VIs, I-III-VI2, and II-IV-V2 chalcopyrites will be studied by FTIR as are the sp-d and d-d exchange interactions as revealed in the magnetic excitations in the II-VI and chalcopyrite based diluted magnetic semiconductors. These and other phenomena and systems constitute a wide ranging research program whose contributions to various areas of contemporary solid state physics and materials science will aid in our understanding of the fundamental behavior of novel materials and assist in their incorporation in varied technological devices. The research is conducted jointly with graduate students and post doctoral research associates. This collaboration serves to train the next generation of scientists and engineers ***

小行星9800858 这项研究由A.K.教授进行。Ramdas和S.普渡大学物理系的Rodriguez专注于研究一系列四面体配位半导体所表现出的新颖光谱现象，这些半导体在原子结构，晶格动力学和电子能带结构方面具有共同特征。 将进行一项内容丰富的研究计划，包括通过傅里叶变换研究同位素控制的金刚石、碳化硅多型体和II-VI族化合物半导体中施主束缚电子和受主束缚空穴的电子态的性质 红外 （傅里叶变换红外光谱）， 拉曼， 和 光致发光光谱学 此外，压电和磁光谱将用于 推导出场地对称性 杂质中， 和 简并度、形变势常数和g因子特征 的 的约束状态。 此外，本发明还 将通过FTIR研究II-VI、I-III-VI 2和II-IV-V2黄铜矿中等电子和补偿杂质的局部振动和能隙模式，以及II-VI和黄铜矿中磁激发所揭示的sp-d和d-d交换相互作用。基于稀释磁性半导体。 这些和其他现象和系统构成了一个广泛的研究计划，其对当代固态物理和材料科学各个领域的贡献将有助于我们理解新材料的基本行为，并有助于将其纳入各种技术设备。 %这项研究由教授A.K. Ramdas和S.普渡大学物理系的Rodriguez专注于研究一系列四面体配位半导体所表现出的新颖光谱现象，这些半导体在原子结构，晶格动力学和电子能带结构方面具有共同特征。 将进行一项内容丰富的研究计划，包括通过傅里叶变换研究同位素控制的金刚石、碳化硅多型体和II-VI族化合物半导体中施主束缚电子和受主束缚空穴的电子态的性质 红外 （傅里叶变换红外光谱）， 拉曼， 和 光致发光光谱学 此外，压电和磁光谱将用于 推导出场地对称性 杂质中， 和 简并度、形变势常数和g因子特征 的 的约束状态。 此外，本发明还 将通过FTIR研究II-VI、I-III-VI 2和II-IV-V2黄铜矿中的等电子和补偿杂质的局部振动和带隙模式，以及在基于II-VI和黄铜矿的稀磁半导体中的磁激发中揭示的sp-d和d-d交换相互作用。 这些和其他现象和系统构成了一个广泛的研究计划，其对当代固态物理和材料科学各个领域的贡献将有助于我们理解新材料的基本行为，并有助于将其纳入各种技术设备。 这项研究是与研究生和博士后研究助理共同进行的。 这项合作旨在培养下一代科学家和工程师 *