Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors and Their Heterostructures

四面体配位半导体及其异质结构中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱

• 批准号: 0405082
• 负责人: Anant Ramdas
• 金额: $ 36万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-09-01 至 2008-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0405082&HistoricalAwards=false
• 关键词: Raman; Brillouin; Infrared; Modulation; Spectroscopy

This project is devoted to the experimental and theoretical investigation of collective and localized excitations in tetrahedrally coordinated semiconductors and their hetero-and nanostructures by a variety of optical (spectroscopic) techniques. The research will focus on novel phenomena and unique properties produced in these materials by the deliberate introduction of chemical impurities as donors and acceptors, or as isoelectronic and magnetic constituents. Electronic properties of isotopically controlled diamond, Si and Ge will be investigated. The program will explore and delineate the electronic states of donor-bound electrons and acceptor-bound holes in diamond, in III-V and III-VI magnetic (spintronic) multinaries and in chalcopyrites, genealogically derived from III-V and II-VI semiconductors. Collective and localized electronic and vibrational states will be investigated in these semiconductors and their nanostructures with magneto- and piezo-spectroscopy. Graduate students and undergraduate students participating in the program will acquire skills in Raman, Brillouin, infrared and modulated reflectivity/transmission spectroscopy applied to issues at the forefront areas in current semiconductor physics and, in the process, be trained for careers in academe, industry, and government. Research proposed deals with applications of several optical techniques to the behavior and properties of advanced semiconductor materials. These materials play a significant role in the current technology and hold the promise and potential for significant applications. High temperature/high power electronic devices based on wideband gap, ultra hard semiconductors, e.g. diamond; new generations of solid state electronics in which spin-polarized charge carriers are exploited using spintronic materials; the manipulation of semiconductor properties by the deliberate introduction of specific impurities or by controlling the isotopic composition: These are illustrative examples of the excitement and intellectual challenges in the physics of semiconductors and their future applications. Participants in the program - graduate students and postdoctoral research associates - will acquire versatile expertise for careers in academia, national laboratories as well as in research and development in the opto-electronics industry.

本项目致力于通过各种光学（光谱）技术对四面体配位半导体及其异质和纳米结构中的集体和局部激发进行实验和理论研究。研究将集中于通过故意引入化学杂质作为供体和受体，或作为等电子和磁性成分，在这些材料中产生的新现象和独特性质。研究了同位素控制的金刚石、硅和锗的电子性质。该计划将探索和描述钻石、III-V和III-VI磁性（自旋电子）多晶和黄铜矿中供体束缚电子和受体束缚电子的电子状态，这些电子从谱系上来源于III-V和II-VI半导体。用磁能谱和压电能谱研究这些半导体及其纳米结构中的集体和局域电子和振动态。参加该项目的研究生和本科生将获得拉曼、布里渊、红外和调制反射率/透射光谱的技能，应用于当前半导体物理前沿领域的问题，并在此过程中为学术界、工业界和政府的职业生涯进行培训。提出的研究涉及几种光学技术在先进半导体材料的行为和性能方面的应用。这些材料在当前技术中发挥着重要作用，并具有重要应用的前景和潜力。基于宽带隙、超硬半导体（如金刚石）的高温/大功率电子器件；利用自旋电子材料开发自旋极化载流子的新一代固体电子学；通过故意引入特定杂质或通过控制同位素组成来操纵半导体特性：这些都是半导体物理学及其未来应用中令人兴奋和智力挑战的说明性例子。该计划的参与者——研究生和博士后研究助理——将获得在学术界、国家实验室以及光电子工业研究和开发领域的多才多艺的专业知识。