U.S.-Germany Cooperative Research: Electronic & Magnetic Excitations in II-VI Semiconductors and Their Alloys

美德合作研究：电子

• 批准号: 9726210
• 负责人: Anant Ramdas
• 金额: $ 1.1万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-03-15 至 2002-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9726210&HistoricalAwards=false
• 关键词: U.S.; Germany; Cooperative; Research; Electronic

This award supports Dr. Anant K. Ramdas and up to three graduate students from Purdue University in a collaboration with Harald Pascher of the Department of Experimental Physics at the University of Bayreuth. The collaboration will study the collective and localized excitations in the ternary and quaternary alloys of II-VI diluted magnetic semiconductors. Experimental investigations will involve spontaneous Raman scattering and coherent Stokes-Raman studies supplemented with modulation techniques, photoluminescence, and Fourier transform spectroscopy. Magnetic interactions in the diluted magnetic semiconductors, controlled by the concentration of the magnetic ions or by the dimensionality in sub-micron quantum well structures manifest themselves in a spectacular manner in numerous phenomena, such as the Faraday and Voigt effect, Raman-electron paramagnetic resonance, and Raman-anti-ferromagnetic resonance.

该奖项支持Anant K博士。拉姆达斯和三名普渡大学的研究生 大学与实验系的Harald Pascher合作 拜罗伊特大学的物理学。 合作将研究集体和 II-VI稀磁三元和四元合金中的局域激发 半导体 实验研究将涉及自发拉曼散射 和相干斯托克斯拉曼研究补充调制技术， 光致发光和傅里叶变换光谱。 磁相互作用 稀释的磁性半导体，由磁性离子的浓度控制，或 通过亚微米量子阱结构中的维度， 在许多现象中，如法拉第和福格特效应， 拉曼电子顺磁共振和拉曼反铁磁共振。