Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors and their Heterostructures

四面体配位半导体及其异质结构中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱

• 批准号: 9303186
• 负责人: Anant Ramdas
• 金额: $ 47.59万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-05-15 至 1998-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9303186&HistoricalAwards=false
• 关键词: Raman; Brillouin; Infrared; Modulation; Spectroscopy

This research focuses on the vibrational, electronic, and magnetic excitations in tetrahedrally coordinated semiconductors. Both bulk and submicron heterostructures fabricated by molecular beam epitaxy and chemical vapor deposition will be investigated. II-VI and III-V semiconductors (bulk, epilayers, and quantum well structures) will be examined using Raman, Brillouin, modulated reflectivity, and photoluminescence and absorption spectroscopy. Magnetic ions introduced into II-VI compounds have resulted in a new class of materials called diluted magnetic semiconductors which possess striking magneto-optic effects. Further exploration of these systems will be undertaken with special emphasis on materials of low dimensionality. The vibrational spectra and electronic levels of donors and acceptors intentionally introduced into diamond and silicon carbide will also be studied. The thrust of the program is to provide a fundamental understanding of the physical properties of tetahedrally coordinated semiconductors whose optical characteristics form the basis of many optoelectronic applications. %%% The family of tetrahedrally coordinated semiconductors encompasses the well known group IV semiconductors such as C, Si, and Ge as well as the II-Vs (e.g., GaAs, InSb, etc.) and the II-VIs (e.g., CdTe, ZnTe, etc.) The electronic, vibrational, and magnetic excitations in these materials will be examined through spectroscopic investigations using a variety of techniques. The results of such spectral studies will yield important fundamental quantities related to their optical properties and are expected to form the basis of many optoelectronic devices. In particular, magnetic ions introduced into the II-VIs generate striking magneto- optic effects which have potential applications as magnetic isolators and optical sensors. These novel advanced material systems are accessible to both experimental and theoretical studies, thanks to the ingenious techniques increasingly exploited in the growth of new semiconductors in the bulk as well as with submicron dimensions. The work will be done in collaboration with scientists and technologists at several industrial research laboratories who will supply many of the materials. In addition, the program benefits from an active collaboration with the Argonne National Laboratory.

这项研究的重点是振动，电子， 四面体配位半导体中的磁激发 用分子技术制备的体和亚微米异质结构 将研究束外延和化学气相沉积。 II-VI和III-V半导体（体、外延层和量子阱 结构）将使用拉曼、布里渊、调制 反射率、光致发光和吸收光谱。 引入II-VI族化合物的磁性离子导致了 一种被称为稀磁半导体的新材料， 具有显著的磁光效应。进一步探索 这些系统将特别强调材料 低维度。振动光谱和电子 有意引入的供体和受体水平 金刚石和碳化硅也将被研究。的推力 计划是提供一个基本的理解的物理 四面体配位半导体的性质， 这些特性构成了许多光电应用的基础。 %%% 四面体配位半导体家族 包括公知的IV族半导体如C，Si， 和Ge以及II-V族（例如，GaAs、InSb等）和II-VI (e.g., CdTe、ZnTe等）电子振动和磁性 在这些材料中的激发将通过 使用各种技术进行光谱研究。的 这种光谱研究的结果将产生重要的基础 与其光学性质相关的量，并预计 形成许多光电器件的基础。特别是， 引入II-VI的磁性离子会产生引人注目的磁致伸缩效应， 光学效应具有潜在的应用， 隔离器和光学传感器。 这些新的先进材料系统是可以访问的， 实验和理论研究，由于巧妙的 技术越来越多地利用在新的增长 大块半导体以及亚微米尺寸的半导体。 这项工作将与科学家合作完成， 几个工业研究实验室的技术专家， 提供许多材料。此外，该计划还将使 来自于与阿贡国家实验室的积极合作。