Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors and their Heterostructures

四面体配位半导体及其异质结构中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱

• 批准号: 9303186
• 负责人: Anant Ramdas
• 金额: $ 47.59万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-05-15 至 1998-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9303186&HistoricalAwards=false
• 关键词: Raman; Brillouin; Infrared; Modulation; Spectroscopy

This research focuses on the vibrational, electronic, and magnetic excitations in tetrahedrally coordinated semiconductors. Both bulk and submicron heterostructures fabricated by molecular beam epitaxy and chemical vapor deposition will be investigated. II-VI and III-V semiconductors (bulk, epilayers, and quantum well structures) will be examined using Raman, Brillouin, modulated reflectivity, and photoluminescence and absorption spectroscopy. Magnetic ions introduced into II-VI compounds have resulted in a new class of materials called diluted magnetic semiconductors which possess striking magneto-optic effects. Further exploration of these systems will be undertaken with special emphasis on materials of low dimensionality. The vibrational spectra and electronic levels of donors and acceptors intentionally introduced into diamond and silicon carbide will also be studied. The thrust of the program is to provide a fundamental understanding of the physical properties of tetahedrally coordinated semiconductors whose optical characteristics form the basis of many optoelectronic applications. %%% The family of tetrahedrally coordinated semiconductors encompasses the well known group IV semiconductors such as C, Si, and Ge as well as the II-Vs (e.g., GaAs, InSb, etc.) and the II-VIs (e.g., CdTe, ZnTe, etc.) The electronic, vibrational, and magnetic excitations in these materials will be examined through spectroscopic investigations using a variety of techniques. The results of such spectral studies will yield important fundamental quantities related to their optical properties and are expected to form the basis of many optoelectronic devices. In particular, magnetic ions introduced into the II-VIs generate striking magneto- optic effects which have potential applications as magnetic isolators and optical sensors. These novel advanced material systems are accessible to both experimental and theoretical studies, thanks to the ingenious techniques increasingly exploited in the growth of new semiconductors in the bulk as well as with submicron dimensions. The work will be done in collaboration with scientists and technologists at several industrial research laboratories who will supply many of the materials. In addition, the program benefits from an active collaboration with the Argonne National Laboratory.

这项研究的重点是四面体配位半导体中的振动、电子和磁激发。 将研究通过分子束外延和化学气相沉积制造的块体和亚微米异质结构。 II-VI 和 III-V 半导体（块体、外延层和量子阱结构）将使用拉曼、布里渊、调制反射率以及光致发光和吸收光谱进行检查。 将磁性离子引入 II-VI 化合物中产生了一种称为稀释磁性半导体的新型材料，它具有惊人的磁光效应。对这些系统的进一步探索将特别强调低维材料。还将研究有意引入金刚石和碳化硅中的施主和受主的振动光谱和电子能级。该计划的主旨是提供对四面体配位半导体的物理特性的基本了解，其光学特性构成了许多光电应用的基础。 %%% 四面体配位半导体家族包括众所周知的 IV 族半导体，如 C、Si 和 Ge 以及 II-V 族（例如 GaAs、InSb 等）和 II-VI 族（例如 CdTe、ZnTe 等）。这些材料中的电子、振动和磁激发将通过使用各种光谱研究来检查 技术。此类光谱研究的结果将产生与其光学特性相关的重要基本量，并有望构成许多光电器件的基础。特别是，引入 II-VI 中的磁性离子会产生惊人的磁光效应，具有作为磁隔离器和光学传感器的潜在应用。 由于在大块和亚微米尺寸的新型半导体生长中越来越多地利用巧妙的技术，这些新颖的先进材料系统可以进行实验和理论研究。 这项工作将与几个工业研究实验室的科学家和技术人员合作完成，他们将提供许多材料。此外，该计划受益于与阿贡国家实验室的积极合作。