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Raman, Brillouin, Inrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors & Their Heterostructures

Raman, Brillouin, Inrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors & Their Heterostructures
四面体配位半导体中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱
批准号:
0705793
负责人:
Anant Ramdas
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-09-01 至 2013-02-28

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中文摘要
翻译
非技术摘要拟议的研究利用了一系列光学技术,以发现不断为先进应用而生产的新半导体的行为和特性。将研究基于宽禁带半导体(如金刚石)并具有类钻石结构(碳化硅、氧化锌、氮化镓等)的高温/高功率器件;一类被称为具有磁性成分的自旋电子化合物的半导体材料;以及故意在半导体中添加特定杂质的材料。这些说明性的例子强调了半导体及其在消费、工业、空间和国防电子产品中日益增长的应用的激动人心和智力吸引力。该项目的研究生和博士后研究助理将通过接触尖端工作为研究生涯做好准备。有了这样的专业知识,他们将在未来几十年成为学术界以及国家、工业和国防科学实验室的未来创造性成员。技术摘要该项目利用各种光谱和光学技术(拉曼、布里渊、红外和调制光谱;磁光-法拉第、Voigt和塞曼效应)探索四面体配位半导体及其异质纳米结构中的集体和局域激发。II-VI稀磁半导体、同位素控制的II-VI(氧化锌和镉)、III-V(GaN)、IV-IV(碳化硅多型)和元素(金刚石)所特有的特征将在电子、磁和振动激发及其在外部扰动下的行为的背景下被探索和描绘。我们将研究在异质结构和纳米结构中由于尺寸限制而产生的新效应。研究生和本科生(以“研究经验”被选中)将获得应用于当代半导体物理前沿领域的最先进的光谱学技能,反过来,他们将成为科学/技术凝聚态社区的一部分,并对材料科学产生积极影响。
英文摘要
Non-Technical AbstractThe proposed research exploits a range of optical techniques in order to discover the behavior and properties of new semiconductors constantly being produced for advanced applications. High temperature/high power devices based on wide gap semiconductors such as diamond and having diamond like structures (SiC,ZnO,GaN, etc); a class of semiconducting materials known as "spintronic compounds" with magnetic constituents; and materials obtained with deliberate addition of specific impurities to semiconductors will be studied. These illustrative examples underscore the excitement and the intellectual appeal of semiconductors and their ever increasing applications in consumer, industrial, space, and defense electronics. The graduate students and postdoctoral research associates with the program will be well prepared for research careers by this exposure to the cutting edge work. With the expertise thus acquired, they will become future creative members of the academia as well as national, industrial, and defense science laboratories in the coming decades.Technical AbstractThe project explores collective and localized excitations in tetrahedrally coordinated semiconductors and their hetero-nanostructures exploiting a variety of spectroscopic and optical techniques (Raman, Brillouin, Infrared and Modulation Spectroscopy; magneto-optics - Faraday, Voigt, and Zeeman effect). Signatures unique to the II-VI diluted magnetic semiconductors, isotopically controlled II-VI (ZnO and CdSe), III-V (GaN), IV-IV (SiC polytypes) and elemental (diamond) will be explored and delineated in the context of electronic, magnetic, and vibrational excitations and their behavior under external perturbations. Novel effects resulting from dimensional constraints in hetero-and nano-structures will be investigated. Graduate students and undergraduate students (selected for "research experience") will acquire skills in the state-of-the-art spectroscopy applied to forefront areas in contemporary semiconductor physics, and, in turn, become part of the scientific/technical condensed matter community and have a positively impact on materials science.
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Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors and Their Heterostructures
  • 批准号:
    0405082
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $36.0万
  • 财政年份:
    2004
  • 负责人:
    Anant Ramdas
  • 依托单位:
Materials and Thin Films for Spintronic Devices
  • 批准号:
    0129853
  • 项目类别:
    Standard Grant
  • 资助金额:
    $7.95万
  • 财政年份:
    2001
  • 负责人:
    Anant Ramdas
  • 依托单位:
Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors and Their Heterostructures
  • 批准号:
    0102699
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $39.0万
  • 财政年份:
    2001
  • 负责人:
    Anant Ramdas
  • 依托单位:
U.S.- Germany Cooperative Research: Electronic and Magnetic Excitations in II-VI Semiconductors and their Alloys
  • 批准号:
    9981626
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.6万
  • 财政年份:
    2000
  • 负责人:
    Anant Ramdas
  • 依托单位:
国内基金
海外基金
基于扫描式光纤F-P干涉仪的大气Rayleigh-Brillouin散射谱型精细探测方法与实验研究
  • 批准号:
    61575159
  • 项目类别:
    面上项目
  • 资助金额:
    75.0万元
  • 批准年份:
    2015
  • 负责人:
    王骏
  • 依托单位:
黑腔等离子体条件下受激Brillouin散射与受激Raman散射的耦合与竞争
受激Brillouin散射法测量液体黏度机理研究
  • 批准号:
    51006127
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    21.0万元
  • 批准年份:
    2010
  • 负责人:
    王凤坤
  • 依托单位: