Materials and Thin Films for Spintronic Devices

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The project will be devoted to the growth of III-V diluted magnetic semi-conductors (III-V DMSs) ternary compounds in which the anions are re-placed with a member of the 3d-transition group. The motivation and goal ofthe program are to explore and establish the conditions for successful growthof single crystals which will be materials suitable for investigating the ex-traordinary physical phenomena originating in the large magnetic momentsof 3d-transition-ion (3d-TMI) and their role as acceptors. The simultaneouspresence of free holes and the large magnetic moments provide the ingredi-ents for novel phenomena associated with spin-polarized charge carriers. Thegrowth will initially focus on the incorporation of Mn, Co and Fe into GaAs,InP, GaP and InSb by thermal diffusion and melt growth. Spectroscopic(Fourier Transform Infrared, Raman and photoluminescence, modulated re-flectivity/transmission and magneto optic characterization at Purdue andthose based on magnetic, electron-paramagnetic-resonance, and non-linearspectroscopy by international collaborators will provide invaluable feedbackto the crystal grower. Another collaboration will address the production ofultrapure starting material and fabrication of substrates suitable for molec-ular beam epitaxy (MBE). Basic science and device related work will be ini-tiated during this phase. Besides the crystal growth program implementedby the Co-PI, students will participate in the characterization activities andwill acquire a healthy appreciation of growth techniques. This exposure andinvolvement will prepare them for the scientific/technical workforce of the21st century. The aim of the program is to provide a "steady state-" supply of wellcharacterized III-V diluted magnetic semiconductors to our ongoing researchon collective and localized excitations of vibrational, electronic, and magneticcharacter. The access to bulk single crystals as well as material as MBE-grown epilayers and quantum well structures will give the participants theintense excitement of basic research significant in device applications.