Materials and Thin Films for Spintronic Devices

用于自旋电子器件的材料和薄膜

• 批准号: 0129853
• 负责人: Anant Ramdas
• 金额: $ 7.95万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-08-01 至 2002-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0129853&HistoricalAwards=false
• 关键词: Materials; Thin; Films; Spintronic; Devices

The project will be devoted to the growth of III-V diluted magnetic semi-conductors (III-V DMSs) ternary compounds in which the anions are re-placed with a member of the 3d-transition group. The motivation and goal ofthe program are to explore and establish the conditions for successful growthof single crystals which will be materials suitable for investigating the ex-traordinary physical phenomena originating in the large magnetic momentsof 3d-transition-ion (3d-TMI) and their role as acceptors. The simultaneouspresence of free holes and the large magnetic moments provide the ingredi-ents for novel phenomena associated with spin-polarized charge carriers. Thegrowth will initially focus on the incorporation of Mn, Co and Fe into GaAs,InP, GaP and InSb by thermal diffusion and melt growth. Spectroscopic(Fourier Transform Infrared, Raman and photoluminescence, modulated re-flectivity/transmission and magneto optic characterization at Purdue andthose based on magnetic, electron-paramagnetic-resonance, and non-linearspectroscopy by international collaborators will provide invaluable feedbackto the crystal grower. Another collaboration will address the production ofultrapure starting material and fabrication of substrates suitable for molec-ular beam epitaxy (MBE). Basic science and device related work will be ini-tiated during this phase. Besides the crystal growth program implementedby the Co-PI, students will participate in the characterization activities andwill acquire a healthy appreciation of growth techniques. This exposure andinvolvement will prepare them for the scientific/technical workforce of the21st century. The aim of the program is to provide a "steady state-" supply of wellcharacterized III-V diluted magnetic semiconductors to our ongoing researchon collective and localized excitations of vibrational, electronic, and magneticcharacter. The access to bulk single crystals as well as material as MBE-grown epilayers and quantum well structures will give the participants theintense excitement of basic research significant in device applications.

该项目将致力于III-V稀磁半导体（III-V DMS）三元化合物的生长，其中阴离子被3d过渡族的成员取代。该计划的动机和目标是探索和建立成功生长单晶的条件，这些单晶将是适合于研究源自3d过渡离子（3d-TMI）的大磁矩及其作为受体的作用的异常物理现象的材料。自由空穴的存在和大的磁矩为自旋极化载流子的新现象提供了成分。生长将首先集中于通过热扩散和熔融生长将Mn、Co和Fe并入GaAs、InP、GaP和InSb中。 光谱（傅里叶变换红外、拉曼和光致发光、调制反射率/透射率和磁光特性）将为晶体生长者提供宝贵的反馈信息，而普渡大学和国际合作者基于磁性、电子顺磁共振和非线性光谱的研究将为晶体生长者提供宝贵的反馈信息。另一项合作将致力于生产超纯起始材料和制造适合分子束外延（MBE）的衬底。基础科学和设备相关的工作将在此阶段启动。 除了Co-PI实施的晶体生长计划外，学生还将参加表征活动，并将获得对生长技术的健康欣赏。这种接触和参与将使他们为世纪的科学/技术劳动力做好准备。 该计划的目的是提供一个“稳态”供应的wellcharacterized III-V族稀磁半导体，我们正在进行的研究集体和本地化的激发振动，电子和magneticcharacter。 获得大块单晶以及MBE生长外延层和量子阱结构的材料将给参与者带来对器件应用重要的基础研究的强烈兴奋。