Materials and Thin Films for Spintronic Devices
用于自旋电子器件的材料和薄膜
基本信息
- 批准号:0129853
- 负责人:
- 金额:$ 7.95万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2001
- 资助国家:美国
- 起止时间:2001-08-01 至 2002-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The project will be devoted to the growth of III-V diluted magnetic semi-conductors (III-V DMSs) ternary compounds in which the anions are re-placed with a member of the 3d-transition group. The motivation and goal ofthe program are to explore and establish the conditions for successful growthof single crystals which will be materials suitable for investigating the ex-traordinary physical phenomena originating in the large magnetic momentsof 3d-transition-ion (3d-TMI) and their role as acceptors. The simultaneouspresence of free holes and the large magnetic moments provide the ingredi-ents for novel phenomena associated with spin-polarized charge carriers. Thegrowth will initially focus on the incorporation of Mn, Co and Fe into GaAs,InP, GaP and InSb by thermal diffusion and melt growth. Spectroscopic(Fourier Transform Infrared, Raman and photoluminescence, modulated re-flectivity/transmission and magneto optic characterization at Purdue andthose based on magnetic, electron-paramagnetic-resonance, and non-linearspectroscopy by international collaborators will provide invaluable feedbackto the crystal grower. Another collaboration will address the production ofultrapure starting material and fabrication of substrates suitable for molec-ular beam epitaxy (MBE). Basic science and device related work will be ini-tiated during this phase. Besides the crystal growth program implementedby the Co-PI, students will participate in the characterization activities andwill acquire a healthy appreciation of growth techniques. This exposure andinvolvement will prepare them for the scientific/technical workforce of the21st century. The aim of the program is to provide a "steady state-" supply of wellcharacterized III-V diluted magnetic semiconductors to our ongoing researchon collective and localized excitations of vibrational, electronic, and magneticcharacter. The access to bulk single crystals as well as material as MBE-grown epilayers and quantum well structures will give the participants theintense excitement of basic research significant in device applications.
该项目将致力于III-V稀磁半导体(III-V DMS)三元化合物的生长,其中阴离子被3d过渡族的成员取代。该计划的动机和目标是探索和建立成功生长单晶的条件,这些单晶将是适合于研究源自3d过渡离子(3d-TMI)的大磁矩及其作为受体的作用的异常物理现象的材料。自由空穴的存在和大的磁矩为自旋极化载流子的新现象提供了成分。生长将首先集中于通过热扩散和熔融生长将Mn、Co和Fe并入GaAs、InP、GaP和InSb中。 光谱(傅里叶变换红外、拉曼和光致发光、调制反射率/透射率和磁光特性)将为晶体生长者提供宝贵的反馈信息,而普渡大学和国际合作者基于磁性、电子顺磁共振和非线性光谱的研究将为晶体生长者提供宝贵的反馈信息。另一项合作将致力于生产超纯起始材料和制造适合分子束外延(MBE)的衬底。基础科学和设备相关的工作将在此阶段启动。 除了Co-PI实施的晶体生长计划外,学生还将参加表征活动,并将获得对生长技术的健康欣赏。这种接触和参与将使他们为世纪的科学/技术劳动力做好准备。 该计划的目的是提供一个“稳态”供应的wellcharacterized III-V族稀磁半导体,我们正在进行的研究集体和本地化的激发振动,电子和magneticcharacter。 获得大块单晶以及MBE生长外延层和量子阱结构的材料将给参与者带来对器件应用重要的基础研究的强烈兴奋。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
数据更新时间:{{ journalArticles.updateTime }}
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
Anant Ramdas其他文献
Anant Ramdas的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('Anant Ramdas', 18)}}的其他基金
Raman, Brillouin, Inrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors & Their Heterostructures
四面体配位半导体中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱
- 批准号:
0705793 - 财政年份:2007
- 资助金额:
$ 7.95万 - 项目类别:
Continuing Grant
Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors and Their Heterostructures
四面体配位半导体及其异质结构中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱
- 批准号:
0405082 - 财政年份:2004
- 资助金额:
$ 7.95万 - 项目类别:
Continuing Grant
Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors and Their Heterostructures
四面体配位半导体及其异质结构中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱
- 批准号:
0102699 - 财政年份:2001
- 资助金额:
$ 7.95万 - 项目类别:
Continuing Grant
U.S.- Germany Cooperative Research: Electronic and Magnetic Excitations in II-VI Semiconductors and their Alloys
美德合作研究:II-VI 半导体及其合金中的电子和磁激励
- 批准号:
9981626 - 财政年份:2000
- 资助金额:
$ 7.95万 - 项目类别:
Standard Grant
U.S.-Germany Cooperative Research: Electronic & Magnetic Excitations in II-VI Semiconductors and Their Alloys
美德合作研究:电子
- 批准号:
9726210 - 财政年份:1998
- 资助金额:
$ 7.95万 - 项目类别:
Standard Grant
Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors
四面体配位半导体中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱
- 批准号:
9800858 - 财政年份:1998
- 资助金额:
$ 7.95万 - 项目类别:
Continuing Grant
Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors and their Heterostructures
四面体配位半导体及其异质结构中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱
- 批准号:
9303186 - 财政年份:1993
- 资助金额:
$ 7.95万 - 项目类别:
Continuing Grant
Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Crystals and their Heterostructures
晶体及其异质结构中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱
- 批准号:
8921717 - 财政年份:1990
- 资助金额:
$ 7.95万 - 项目类别:
Continuing Grant
Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Crystals
晶体中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱
- 批准号:
8616787 - 财政年份:1987
- 资助金额:
$ 7.95万 - 项目类别:
Continuing Grant
Diluted Magnetic Semiconductors and their Superlattices
稀磁半导体及其超晶格
- 批准号:
8520866 - 财政年份:1986
- 资助金额:
$ 7.95万 - 项目类别:
Continuing Grant
相似海外基金
CAS-SC: Uncovering Mechanistic Details of Photo-Induced Charge Transfer in Thin Films of Photoactive Materials with In situ and Operando Transient Absorption Spectroscopy
CAS-SC:利用原位和操作瞬态吸收光谱揭示光敏材料薄膜中光致电荷转移的机制细节
- 批准号:
2313290 - 财政年份:2023
- 资助金额:
$ 7.95万 - 项目类别:
Standard Grant
Graphitic Carbon Nitride-based Thin Films as New Functional Materials
石墨氮化碳基薄膜作为新型功能材料
- 批准号:
22KJ0959 - 财政年份:2023
- 资助金额:
$ 7.95万 - 项目类别:
Grant-in-Aid for JSPS Fellows
Materials: Investigating Ion Transport in Oxide Thin Films for Energy Applications
材料:研究能源应用氧化物薄膜中的离子传输
- 批准号:
BB/X005011/1 - 财政年份:2022
- 资助金额:
$ 7.95万 - 项目类别:
Research Grant
Development of energy function identification system for hyperelastic materials by indenting thin films
超弹性材料压痕薄膜能量函数识别系统的开发
- 批准号:
22K03814 - 财政年份:2022
- 资助金额:
$ 7.95万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Exploration of Organic Polar materials with Ultra-thin crystalline films
超薄晶膜有机极性材料的探索
- 批准号:
21K18899 - 财政年份:2021
- 资助金额:
$ 7.95万 - 项目类别:
Grant-in-Aid for Challenging Research (Exploratory)
Pulsed Photoinitiated Composite Thin Films of Transition Metal Oxides and Reduced Graphitic Oxides as Electrode Materials for Solid State Thin Film Electrochemical Capacitor
脉冲光引发过渡金属氧化物和还原石墨氧化物复合薄膜作为固态薄膜电化学电容器电极材料
- 批准号:
20K15040 - 财政年份:2020
- 资助金额:
$ 7.95万 - 项目类别:
Grant-in-Aid for Early-Career Scientists
Organic thin films from novel plasma processes for improved adhesion of composite materials
采用新型等离子工艺制成的有机薄膜,可提高复合材料的附着力
- 批准号:
513303-2017 - 财政年份:2017
- 资助金额:
$ 7.95万 - 项目类别:
Engage Plus Grants Program
Development of new multifunctional materials by magnetic metal-ferroelectric nano-composite thin films
磁性金属-铁电纳米复合薄膜新型多功能材料的开发
- 批准号:
17H03385 - 财政年份:2017
- 资助金额:
$ 7.95万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Exploiting Synergies between Thin Films and Bulk Materials: the Key to Understanding Magnetic Properties and Magneto-Transport in MnAl
利用薄膜和块体材料之间的协同作用:理解 MnAl 磁性和磁输运的关键
- 批准号:
380033763 - 财政年份:2017
- 资助金额:
$ 7.95万 - 项目类别:
Research Grants
ANR Smart materials based on vanadium oxide thin films
基于氧化钒薄膜的ANR智能材料
- 批准号:
479203-2015 - 财政年份:2017
- 资助金额:
$ 7.95万 - 项目类别:
Strategic Projects - Group