Materials and Thin Films for Spintronic Devices

该项目将致力于III-V稀释磁性半导体（III-V dms）三元化合物的生长，其中阴离子被3d过渡基团的一个成员取代。该项目的动机和目标是探索和建立成功生长单晶的条件，单晶将成为适合研究起源于3d跃迁（3d-TMI）大磁矩及其受体作用的特殊物理现象的材料。自由空穴和大磁矩的同时存在为自旋极化载流子的新现象提供了条件。生长将首先集中在Mn， Co和Fe通过热扩散和熔体生长结合到GaAs，InP， GaP和InSb中。普渡大学的光谱（傅里叶变换红外、拉曼和光致发光）、调制反射率/透射和磁光学表征，以及国际合作者基于磁性、电子顺磁共振和非线性光谱的表征，将为晶体种植者提供宝贵的反馈。另一项合作将解决超纯起始材料的生产和适合分子束外延（MBE）的衬底的制造。基础科学和设备相关工作将在此阶段启动。除了由Co-PI实施的晶体生长计划外，学生将参与表征活动，并将获得对生长技术的健康欣赏。这种接触和参与将使他们为21世纪的科学/技术劳动力做好准备。该计划的目的是为我们正在进行的关于振动、电子和磁性的集体和局部激励的研究提供一个“稳定状态”的III-V稀释磁性半导体。获得大块单晶以及mbe生长的薄膜和量子阱结构等材料将使参与者对在器件应用中具有重要意义的基础研究产生强烈的兴奋。

The project will be devoted to the growth of III-V diluted magnetic semi-conductors (III-V DMSs) ternary compounds in which the anions are re-placed with a member of the 3d-transition group. The motivation and goal ofthe program are to explore and establish the conditions for successful growthof single crystals which will be materials suitable for investigating the ex-traordinary physical phenomena originating in the large magnetic momentsof 3d-transition-ion (3d-TMI) and their role as acceptors. The simultaneouspresence of free holes and the large magnetic moments provide the ingredi-ents for novel phenomena associated with spin-polarized charge carriers. Thegrowth will initially focus on the incorporation of Mn, Co and Fe into GaAs,InP, GaP and InSb by thermal diffusion and melt growth. Spectroscopic(Fourier Transform Infrared, Raman and photoluminescence, modulated re-flectivity/transmission and magneto optic characterization at Purdue andthose based on magnetic, electron-paramagnetic-resonance, and non-linearspectroscopy by international collaborators will provide invaluable feedbackto the crystal grower. Another collaboration will address the production ofultrapure starting material and fabrication of substrates suitable for molec-ular beam epitaxy (MBE). Basic science and device related work will be ini-tiated during this phase. Besides the crystal growth program implementedby the Co-PI, students will participate in the characterization activities andwill acquire a healthy appreciation of growth techniques. This exposure andinvolvement will prepare them for the scientific/technical workforce of the21st century. The aim of the program is to provide a "steady state-" supply of wellcharacterized III-V diluted magnetic semiconductors to our ongoing researchon collective and localized excitations of vibrational, electronic, and magneticcharacter. The access to bulk single crystals as well as material as MBE-grown epilayers and quantum well structures will give the participants theintense excitement of basic research significant in device applications.