Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors and Their Heterostructures

四面体配位半导体及其异质结构中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱

• 批准号: 0102699
• 负责人: Anant Ramdas
• 金额: $ 39万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-09-01 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0102699&HistoricalAwards=false
• 关键词: Raman; Brillouin; Infrared; Modulation; Spectroscopy

This project is devoted to the investigation of collective and localized excitations in tetrahedrally coordinated semiconductors and their heterostructures by means of a variety of optical techniques. The research will focus on the collective and localized excitations in isotopically controlled semiconductors composed composed of light atoms (diamond, SiC, BN and BP). Attention will be given to electronic states of donor-bound electrons and acceptor-bound holes in isotopically controlled diamond, Si, silicon carbide polytypes, as well as II-VI and III-V compound semiconductors. In addition, localized vibrations and gap modes of isoelectronic and compensated impurities will be explored and delineated in the chalcopyrites genealogically derived from the II-VI and III-V semiconductors. Collective excitations subjected to the constraints of the reduced dimensionality of nanostructures fabricated with molecular beam epitaxy will be investigated. Raman, Brillouin, Infrared , photoluminescence and modulated reflectivity/transmission spectroscopic techniques supplemented by piezo- and magneto-spectroscopy will be employed to address the above problems. Students will participate in this research. They will receive training in one of the forefront areas of current semiconductors physics and will thereby be prepared to enter the scientific/technical workforce of the 21st Century. This research deals with the application of several experimental optical techniques to problems posed by advanced semiconductor materials. These materials play a great role in current technology but a basic understanding of their behaviors is still lacking. This research will provide information that will be useful for the synthesis and use of ultrahard materials, such as diamond, silicon carbide, boron nitride and others that have found applications as superhard thin film coatings. The behavior of these materials can be changed by the deliberate, controlled introduction of specific impurities or by manipulating their isotopic composition. The changed behaviors hold the promise of improved performance of the materials in applications of high temperature/high power electronic devices. This project offers many opportunities for the participation by students. Participants in the program will be exposed to the excitement and intellectual challenges of an area that is important in contemporary basic science and significant for potential applications. The expertise thus developed will prepare them for a future in academia and government as well as a career in research and development in the high tech optoelectronic industry.

本计画致力于借由各种光学技术来研究四面体配位半导体及其异质结构中的集体与定域激发。研究将集中在由轻原子（金刚石，SiC，BN和BP）组成的同位素控制的半导体中的集体和局部激发。注意力将给予电子状态的施主束缚电子和受体束缚空穴在同位素控制的金刚石，硅，碳化硅多型体，以及II-VI和III-V化合物半导体。此外，本地化的振动和间隙模式的等电子和补偿杂质将被探索和描绘的黄铜矿谱系来自II-VI和III-V族半导体。集体激发受到的约束下的降维与分子束外延制造的纳米结构将被调查。拉曼，布里渊，红外，光致发光和调制反射率/透射光谱技术，辅以压电和磁光谱将用于解决上述问题。 学生将参与这项研究。他们将接受当前半导体物理学前沿领域之一的培训，从而为进入21世纪的科学/技术劳动力做好准备。这项研究涉及应用几个实验光学技术所提出的问题，先进的半导体材料。这些材料在当前技术中发挥着重要作用，但对其行为的基本了解仍然缺乏。这项研究将提供信息，将是有用的合成和使用超硬材料，如金刚石，碳化硅，氮化硼和其他已发现的应用程序作为超硬薄膜涂层。 这些材料的行为可以通过故意控制特定杂质的引入或通过操纵其同位素组成来改变。这些改变的行为有望改善材料在高温/大功率电子器件应用中的性能。该项目为学生提供了许多参与的机会。该计划的参与者将接触到一个在当代基础科学中非常重要并对潜在应用具有重要意义的领域的兴奋和智力挑战。 因此，开发的专业知识将为他们在学术界和政府的未来以及在高科技光电行业的研究和开发的职业生涯做好准备。