U.S.- Germany Cooperative Research: Electronic and Magnetic Excitations in II-VI Semiconductors and their Alloys

9981626 ramdas该奖项支持普渡大学的Anant K. Ramdas博士和一名研究生与德国拜罗伊特大学实验物理系的Harald Pascher的合作。合作研究了II-VI稀释磁性半导体的三元和四元合金中的集体激发和局部激发。实验研究包括自发拉曼散射和相干斯托克斯-拉曼研究，辅以调制技术、光致发光和傅立叶变换光谱。稀释磁性半导体中的磁相互作用，由磁性离子的浓度或亚微米量子阱结构的维度控制，以一种壮观的方式表现在许多现象中，如法拉第和Voigt效应，拉曼-电子顺磁共振和拉曼-反铁磁共振。该奖项是普渡大学研究生在两年的基础上又增加了第三年的研究，该奖项已经产生了重要的成果，发表了几篇文章，并为几名普渡大学研究生带来了出色的经历。

9981626RamdasThis award supports Dr. Anant K. Ramdas and a graduate student from Purdue University in a collaboration with Harald Pascher of the Department of Experimental Physics at the University of Bayreuth, Germany. The collaboration studies the collective and localized excitations in the ternary and quaternary alloys of II-VI diluted magnetic semiconductors. Experimental investigations involve spontaneous Raman scattering and coherent Stokes-Raman studies supplemented with modulation techniques, photoluminescence, and Fourier transform spectroscopy. Magnetic interactions in the diluted magnetic semiconductors, controlled by the concentration of the magnetic ions or by the dimensionality in sub-micron quantum well structures manifest themselves in a spectacular manner in numerous phenomena, such as the Faraday and Voigt effect, Raman-electron paramagnetic resonance, and Raman-anti-ferromagnetic resonance. This award adds a third year of research to a two-year award that has already produced significant results, several publications, and excellent experience for several Purdue graduate students.