Development of Si Light Emitting Devices for Enabling Optical Interconnect Technology in Si Integrated Circuits

开发硅发光器件以实现硅集成电路中的光互连技术

• 批准号: 9802270
• 负责人: Agisilaos Iliadis
• 金额: $ 15万
• 依托单位: University of Maryland, College Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-06-01 至 2001-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9802270&HistoricalAwards=false
• 关键词: Development; Si; Light; Emitting; Devices

9802270IliadisThe development of a novel light-emitting device in Si is proposed [I], which is fully compatible with CMOS technology and processing, and provides light emission under standard analog/digital biasing conditions. The device uses a different approach to the standard forward biased p-n junction light emission recombination processes, and this proposal seeks to explore the development of the device and in the process of this development, understand better the mechanisms of light emission.For the development of this technology, planar p-n junction diodes and micron and submicron IC MOSFET arrays will be fabricated, and shallow implantations will be performed to define the optically active areas. Electrical and optical evaluation will be performed to examine the resultant properties of the device and develop an understanding of the parameters critical to the light emission processes. Auger and SIMS analysis will be employed to define the implant profiles and correlate with observed properties.Implantations will be performed by a standard broad area implanter and by a focused ion beam implanter (FIBI) at the University of Maryland Focused Ion Beam facility. Processing of micron MOSFET devices, electrical (parameters, DLTS) and optical (luminescence spectroscopy and wafer imaging) evaluation will also be done at the University of Maryland. Sumbicron processing, and Auger/SIMS analysis, will be done at the Army Research Laboratory, Adelphi, MD, through the ongoing collaborative program, at no cost to this proposal.The development of such light emitting device, will have a significant impact in developing viable fully CMOS compatible Si OEIC technology, with optical interconnects for on-chip guided and freespace optical processing and transmission.***

提出了一种新型的Si发光器件的开发[I]，该器件完全兼容CMOS技术和工艺，并在标准模拟/数字偏置条件下提供发光。该器件采用了一种不同于标准正向偏置pn结发光复合工艺的方法，本提案旨在探索该器件的发展，并在此发展过程中，更好地了解发光机制。对于该技术的发展，将制造平面p-n结二极管以及微米和亚微米集成电路MOSFET阵列，并将进行浅植入以定义光活性区域。将进行电学和光学评估，以检查器件的最终特性，并了解对光发射过程至关重要的参数。将采用螺旋钻和SIMS分析来确定植入物的轮廓，并与观察到的特性相关联。植入将由马里兰大学聚焦离子束设备的标准大面积植入器和聚焦离子束植入器（FIBI）进行。微米级MOSFET器件的加工、电学（参数、dlt）和光学（发光光谱和晶圆成像）评估也将在马里兰大学完成。Sumbicron处理和Auger/SIMS分析将通过正在进行的合作项目在陆军研究实验室（Adelphi， MD）完成，该提案不需要任何费用。这种发光器件的发展将对开发可行的完全CMOS兼容的Si OEIC技术产生重大影响，并具有用于片上引导和自由空间光处理和传输的光互连