Development of Si Light Emitting Devices for Enabling Optical Interconnect Technology in Si Integrated Circuits

9802270[i]提出了一种新型的硅基发光器件[I]，它与CMOS工艺和工艺完全兼容，并在标准的模拟/数字偏置条件下提供发光。该器件使用了一种不同的方法来进行标准的正向偏置p-n结光发射复合工艺，该方案旨在探索该器件的发展，并在此过程中更好地了解发光机制。为了发展这项技术，将制造平面p-n结二极管和微米和亚微米IC MOSFET阵列，并进行浅注入以确定光学有源区。将进行电气和光学评估，以检查设备的结果属性，并了解对发光过程至关重要的参数。将使用俄歇和SIMS分析来确定注入轮廓并与观察到的特性相关联。植入将由标准的广域注入机和马里兰大学聚焦离子束设施的聚焦离子束注入器(FIBI)进行。微米MOSFET器件的加工、电气(参数，DLT)和光学(发光光谱和晶片成像)的评估也将在马里兰大学进行。Sumbiron处理和Auger/SIMS分析将在马里兰州阿德尔菲市的陆军研究实验室通过正在进行的合作计划进行，这对这项计划是免费的。这种发光设备的开发将对开发可行的完全兼容CMOS的硅OEIC技术产生重大影响，该技术具有用于芯片上引导和自由空间光学处理和传输的光学互连。*

9802270IliadisThe development of a novel light-emitting device in Si is proposed [I], which is fully compatible with CMOS technology and processing, and provides light emission under standard analog/digital biasing conditions. The device uses a different approach to the standard forward biased p-n junction light emission recombination processes, and this proposal seeks to explore the development of the device and in the process of this development, understand better the mechanisms of light emission.For the development of this technology, planar p-n junction diodes and micron and submicron IC MOSFET arrays will be fabricated, and shallow implantations will be performed to define the optically active areas. Electrical and optical evaluation will be performed to examine the resultant properties of the device and develop an understanding of the parameters critical to the light emission processes. Auger and SIMS analysis will be employed to define the implant profiles and correlate with observed properties.Implantations will be performed by a standard broad area implanter and by a focused ion beam implanter (FIBI) at the University of Maryland Focused Ion Beam facility. Processing of micron MOSFET devices, electrical (parameters, DLTS) and optical (luminescence spectroscopy and wafer imaging) evaluation will also be done at the University of Maryland. Sumbicron processing, and Auger/SIMS analysis, will be done at the Army Research Laboratory, Adelphi, MD, through the ongoing collaborative program, at no cost to this proposal.The development of such light emitting device, will have a significant impact in developing viable fully CMOS compatible Si OEIC technology, with optical interconnects for on-chip guided and freespace optical processing and transmission.***