CAREER: Microstructure Evolution and Interfacial Reaction Paths in Cu Alloy Thin Films
职业:铜合金薄膜中的微观结构演变和界面反应路径
基本信息
- 批准号:9984478
- 负责人:
- 金额:$ 32.48万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2000
- 资助国家:美国
- 起止时间:2000-01-15 至 2005-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
9984478RamanathThis grant seeks an atomic-level understanding of solute-induced grain size and texture evolution in metal alloy films. A goal is to correlate the effects of microstructure and interface chemistry on film properties. Systematic studies are carried out on two model systems, Cu-Mg and Cu-Al, chosen based on their low and high solid-solubilities, respectively, to reveal the effects of solubility and supersaturation on microstructure and interface chemistry evolution. The specific interrelated goals are: 1) reveal the sequence and kinetics of solute segregation, grain growth, and interfacial reactions during film growth and post-deposition annealing; 2) reveal solute segregation paths (e.g., inter- vs. intra-granular) and surface/interface morphology, structure, and chemistry; 3) understand the influence of precipitate morphology, precipitate-matrix crystallography (e.g. coherency), and interface chemistry on grain size and texture evolution; and 4) understand the effects of texture and solute additions on electromigration, and interface chemistry on oxidation and diffusion barrier properties. The overall thrust of the CAREER educational plan is to develop innovative teaching tools and methods to enable students to acquire top-quality technical knowledge, assimilate the art of learning independently, and prepare them for successful professional careers. The distance-learning Materials Characterization course will be converted into an interactive format and a graduate seminar course and an undergraduate elective on thin film materials and processing will be created as well as computer/video modules related to thin film materials for integration in interactive class sessions of the above courses and outreach activities.%%%The resulting knowledge will enable the tailoring of film properties by atomic-level control of microstructure and interface chemistry through strategic solute additions and annealing. The focus is on copper alloys because of the importance of Cu for interconnect applications in microelectronics. Solute additions to Cu have shown promise for preventing Cu diffusion into silica thereby improving adhesion and electromigration resistance. It is essential to reveal the mechanisms of solute-induced film-property enhancements in Cu films to reproducibly create smaller (faster) and more reliable interconnect structures through alloying.***
9984478 Ramanath该资助旨在从原子水平上了解金属合金薄膜中溶质诱导的晶粒尺寸和织构演变。一个目标是将微观结构和界面化学对薄膜性能的影响联系起来。 系统地研究了Cu-Mg和Cu-Al两个模型体系的固溶度和过饱和度对微观组织和界面化学演化的影响。具体的相关目标是:1)揭示在膜生长和沉积后退火期间溶质偏析、晶粒生长和界面反应的顺序和动力学; 2)揭示溶质偏析路径(例如,颗粒间与颗粒内)和表面/界面形态、结构和化学; 3)理解沉淀物形态、沉淀物-基质晶体学(例如相干性)和界面化学对晶粒尺寸和织构演化的影响;以及4)理解织构和溶质添加对电迁移的影响,以及界面化学对氧化和扩散阻挡特性的影响。 CAREER教育计划的总体目标是开发创新的教学工具和方法,使学生能够获得高质量的技术知识,吸收独立学习的艺术,并为成功的职业生涯做好准备。 远程学习材料表征课程将转换为互动形式,并将创建研究生研讨会课程和薄膜材料与加工的本科生选修课,以及与薄膜材料相关的计算机/视频模块,以整合到上述课程和推广活动的互动课堂中。由此产生的知识将使定制的薄膜性能的微观结构和界面化学通过战略溶质添加和退火的原子级控制。 重点是铜合金,因为铜在微电子互连应用的重要性。 向Cu中添加溶质已显示出防止Cu扩散到二氧化硅中从而改善粘附性和抗电迁移性的前景。 揭示Cu膜中溶质诱导的膜性质增强的机制对于通过合金化可重复地创建更小(更快)和更可靠的互连结构至关重要。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Ganpati Ramanath其他文献
Civil Society-Driven Drug Policy Reform for Health and Human Welfare—India
- DOI:
10.1016/j.jpainsymman.2016.10.362 - 发表时间:
2017-03-01 - 期刊:
- 影响因子:
- 作者:
Nandini Vallath;Tripti Tandon;Tania Pastrana;Diederik Lohman;S. Asra Husain;James Cleary;Ganpati Ramanath;M.R. Rajagopal - 通讯作者:
M.R. Rajagopal
Microstructure control and property switching in stress-free van der Waals epitaxial VOsub2/sub films on mica
云母上无应力范德华外延 VO₂ 薄膜的微观结构控制和性能转换
- DOI:
10.1016/j.matdes.2023.111864 - 发表时间:
2023-05-01 - 期刊:
- 影响因子:7.900
- 作者:
Erik Ekström;Simon Hurand;Arnaud le Febvrier;Anna Elsukova;Per O.Å. Persson;Biplab Paul;Fredrik Eriksson;Geetu Sharma;Oleksandr Voznyy;Davide G. Sangiovanni;Ganpati Ramanath;Per Eklund - 通讯作者:
Per Eklund
Ganpati Ramanath的其他文献
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{{ truncateString('Ganpati Ramanath', 18)}}的其他基金
BRITE Relaunch: Manufacturing Multilayers of Molecularly-Bonded Inorganic Nanointerfaces for Accessing and Tuning Novel Properties
BRITE 重新推出:制造多层分子键合无机纳米界面以获取和调整新特性
- 批准号:
2135725 - 财政年份:2021
- 资助金额:
$ 32.48万 - 项目类别:
Standard Grant
Collaborative Research: Understanding Mechanical and Thermal Properties and Their Coupling at Nanomolecularly Modified Metal-Ceramic Interfaces
合作研究:了解纳米分子改性金属陶瓷界面的机械和热性能及其耦合
- 批准号:
1100933 - 财政年份:2011
- 资助金额:
$ 32.48万 - 项目类别:
Standard Grant
COLLABORATIVE RESEARCH: MOSFETS WITH ATOMICALLY ENGINEERED METAL/HIGH-K INTERFACES
合作研究:具有原子工程金属/高 K 界面的 MOSFET
- 批准号:
1002282 - 财政年份:2010
- 资助金额:
$ 32.48万 - 项目类别:
Standard Grant
MRI: Acquisition of a Multipurpose X-Ray Diffractometer for Advanced Materials Research and Education
MRI:购买多功能 X 射线衍射仪用于先进材料研究和教育
- 批准号:
0821536 - 财政年份:2008
- 资助金额:
$ 32.48万 - 项目类别:
Standard Grant
U.S.-India Advanced Studies Institute for Nanoscale Science and Engineering
美印纳米科学与工程高级研究所
- 批准号:
0732645 - 财政年份:2007
- 资助金额:
$ 32.48万 - 项目类别:
Standard Grant
Self-Assembled Molecular Nanolayers for Interfacial Isolation in Device Interconnections
用于器件互连中界面隔离的自组装分子纳米层
- 批准号:
0501488 - 财政年份:2005
- 资助金额:
$ 32.48万 - 项目类别:
Continuing Grant
A New-Class of Molecularly-Engineered Nanoporous Dielectric Materials for Insulation in Device Wiring for Integrated Circuits
一种新型分子工程纳米多孔介电材料,用于集成电路器件布线的绝缘
- 批准号:
0519081 - 财政年份:2005
- 资助金额:
$ 32.48万 - 项目类别:
Continuing Grant
Collaborative Research: MEMS from Organized Mesoscale Architectures of Carbon Nanotubes
合作研究:来自碳纳米管有序介观结构的 MEMS
- 批准号:
0424322 - 财政年份:2004
- 资助金额:
$ 32.48万 - 项目类别:
Continuing Grant
REU SITE: Research Experiences for Undergraduates in Materials Science and Engineering
REU 网站:材料科学与工程本科生的研究经验
- 批准号:
0097589 - 财政年份:2001
- 资助金额:
$ 32.48万 - 项目类别:
Continuing Grant
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- 项目类别:面上项目
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