Real Space Surface Crystallography From Scattering and Recoiling Imaging

这项研究项目在分析和表面化学计划的支持下，专注于开发一种强大的方法，用于技术上重要的半导体表面的真实空间表面结晶学。休斯顿大学的J·韦恩·拉巴莱教授和他的团队结合了散射离子角分布的实验测量和仔细的离子轨迹模拟，开发了一种独特的表面结构工具。该工具用于确定化合物半导体表面的结构，并适用于其他结构工具无效的以氢为端面的表面。从这些研究中获得的理解为半导体器件的设计和工艺条件提供了重要的信息。为了在现代电子设备中使用半导体材料，对材料表面结构的详细了解是必不可少的。这项研究项目由休斯顿大学在分析和表面化学项目的支持下进行，重点是开发能够准确提供这种信息的离子散射方法。通过将散射离子角分布的测量与特定表面结构的计算轨迹相结合，可以获得详细的结构信息。然后，这些信息可以应用于半导体器件和工艺的设计。

This research project, supported by the Analytical and Surface Chemistry Program, focusses on the development of a powerful method for real space surface crystallography of technologically important semiconductor surfaces. Combining experimental measurements of scattered ion angular distributions with careful ion trajectory simulations, Professor J. Wayne Rabalais and his group at the University of Houston have developed a unique surface structural tool. This tool is applied to the determination of the structure of compound semiconductor surfaces, and to surfaces terminated by hydrogen, where other structural tools are ineffective. The understanding obtained from these studies provides important information for the design of semiconductor devices and processing conditions. In order to utilize semiconductor materials in modern electronic devices, detailed knowledge of the surface structure of the material is essential. This research project, being carried out at the University of Houston with support from the Analytical and Surface Chemistry program, is focussed on the development of ion scattering methods which can provide this information accurately. By combining measurements of scattered ion angular distributions with the computed trajectories expected for particular surface structures, detailed structural information becomes available. This information can then be applied to the design of semiconductor devices and processes.