Ion Beam Deposition of Silicon and Group III Nitrides: Growth Parameters and Isotopic Structuring

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9616440 Rabalais Ion Beam Deposition (IBD) will be used for the isotopic structuring of thin films to explore fundamental issues in diffusion and interfacial reactions in silicon. Almost all previous studies of silicon self diffusion have used indirect methods to obtain experimental information. Self-diffusion mechanisms of interstitial and vacancy migration in silicon and group III nitrides will be studied, and the structural, electrical, and optical properties of isotopically engineered materials will be obtained. %%%% This information is of increasingly critical interest to silicon microelectronics as the dimensional tolerances for fiberoptic and optoelectronic device structures fabricated by ion implantation or diffusion get ever smaller. ***