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Mechanistic Studies of Plasma Deposition and Etching for Integrated Circuit Materials

集成电路材料等离子沉积与刻蚀机理研究

基本信息

批准号：
0137664
负责人：
Ellen Fisher
金额：
$ 40万
依托单位：
Colorado State University
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
2002
资助国家：
美国
起止时间：
2002-03-15 至 2006-02-28
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=0137664&HistoricalAwards=false
关键词：
Mechanistic Studies Plasma Deposition Etching

项目摘要

The Advanced Materials program in the Division of Chemistry and the Electronic Materials program in the Division of Materials Research make this joint renewal award to Colorado State University. With this award, Professor Ellen Fisher will study detailed chemical and physical mechanisms of plasma-enhanced chemical vapor deposition and plasma etching, and will evaluate surface interactions of radicals produced during plasma processing using spatially resolved laser-induced fluorescence. The PI will evaluate the interactions between plasma and surfaces during processing of integrated circuits using dual beam imaging; will quantify and characterize the radicals formed during this processing; and will develop detailed chemical mechanisms for plasma etching and plasma-enhanced chemical vapor deposition on different substrates. Use of dual beam imaging will be enable to identify and quantitate a number of different processes that are taking place during the plasma processing, and will be able to develop a knowledge base to be useful to the plasma processing and modeling community. The research project will provide excellent opportunity to graduate and undergraduate students in chemistry and material sciences. This project will use dual beam spatially resolved laser-induced fluorescence imaging method to provide quantitative data on radicals produced at surfaces of different substrates during the plasma processing. Information generated will be useful to plasma processing and modeling community for the development of improved and high performance integrated circuits. In addition, the research activity in plasma processing will provide new opportunity to graduate and undergraduate students in chemistry and materials sciences.

化学系的先进材料项目和材料研究系的电子材料项目将这一联合更新奖授予科罗拉多州立大学。有了这个奖项，艾伦·费舍尔教授将研究等离子体增强化学气相沉积和等离子体蚀刻的详细化学和物理机制，并将使用空间分辨激光诱导荧光来评估等离子体加工过程中产生的自由基的表面相互作用。 PI将使用双光束成像评估集成电路加工过程中等离子体与表面之间的相互作用;将量化和表征在此加工过程中形成的自由基;并将开发不同基板上等离子体蚀刻和等离子体增强化学气相沉积的详细化学机制。使用双束成像将能够识别和量化在等离子体处理期间发生的许多不同过程，并且将能够开发对等离子体处理和建模社区有用的知识库。该研究项目将为化学和材料科学的研究生和本科生提供极好的机会。本项目将采用双光束空间分辨激光诱导荧光成像方法，提供等离子体处理过程中不同衬底表面产生的自由基的定量数据。所产生的信息将是有用的等离子体处理和建模社区的改进和高性能集成电路的发展。此外，等离子体处理的研究活动将为化学和材料科学的研究生和本科生提供新的机会。