Investigation of Plasma Deposition Mechanisms for Silicon Dioxide and Silicon Nitride Films

二氧化硅和氮化硅薄膜的等离子体沉积机理研究

• 批准号: 9501157
• 负责人: Ellen Fisher
• 金额: $ 24.8万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-05-01 至 1999-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9501157&HistoricalAwards=false
• 关键词: Investigation; Plasma; Deposition; Mechanisms; Silicon

In this Faculty Early Career Development Award funded by the Advanced Materials Chemistry Program in the Chemistry Division, Ellen R. Fisher of Colorado State University will investigate plasma-enhanced chemical vapor deposition of thin films of silicon dioxide and hydrogenated amorphous silicon nitride films (alpha-SiNx:H). Critical reactions between gas-phase radical species and the surface being processed by an rf plasma will be studied using a modified IRIS (Imaging of Radicals Interacting with Surfaces) method which combines spatially-resolved laser-induced fluorescence (LIF) detection with molecular beam techniques. Radical reactivities will be measured in real time during thin film deposition. IRIS will enable radicals to be studied which desorb from a surface but are not in the incident molecular beam, yielding information about volatile products produced by surface reactions. Alkoxysilane plasma systems as well as SiX4/NH3 and SiX4/N2 plasmas will be examined. The reactivity of intermediates will be measured as a function of rf input power, radical rotational state, and substrate temperature. Silicon dioxide and silicon nitride films are widely used as gate oxides, passivation layers, and interlevel dielectrics for integrated circuits. Since the mechanisms for plasma deposition of these films is still unknown, further progress to improve film quality will be enhanced by understanding the underlying chemical processes involved, such as provided in this project.

在这个教师早期职业发展奖资助的先进的 化学系材料化学课程。费舍尔 科罗拉多州立大学将研究等离子体增强化学蒸气 二氧化硅和氢化非晶薄膜的沉积 氮化硅膜（α-SiNx：H）。 之间的关键反应 气相自由基物质和被RF等离子体处理的表面 将使用改进的IRIS（自由基相互作用成像）进行研究 与表面）的方法，该方法结合了空间分辨激光诱导 荧光（LIF）检测与分子束技术。 激进 在薄膜沉积过程中，将以真实的时间测量反应性。 IRIS将能够研究从表面解吸的自由基， 不在入射分子束中，产生有关 表面反应产生的挥发性产物。 烷氧基硅烷等离子体 系统以及SiX 4/NH3和SiX 4/N2等离子体将被检查。 的 中间体的反应性将被测量为RF输入的函数 功率、自由基旋转状态和衬底温度。 二氧化硅和氮化硅膜被广泛用作栅极氧化物， 钝化层和用于集成电路的层间介电层。 由于这些膜的等离子体沉积的机制仍然是 未知，进一步的进展，以提高电影质量将提高 了解所涉及的潜在化学过程，例如 在这个项目中提供。