Toward Fundamental Understanding: Correlating the Gas-Phase, Surface, and Gas-Surface Interface in Halogenated Plasma Systems
迈向基本理解:关联卤化等离子体系统中的气相、表面和气体-表面界面
基本信息
- 批准号:0613653
- 负责人:
- 金额:$ 45万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2006
- 资助国家:美国
- 起止时间:2006-09-01 至 2010-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The focus of this project, funded through the NSF/DOE Partnership in Basic Plasma Science and Engineering, is to improve understanding of the fundamental chemical processes that occur at surfaces during plasma processing using halogenated plasmas. These systems are widely used to etch and deposit high performance materials, and will continue to be employed for manufacturing of next generation integrated circuit (IC) materials. Plasma processing of materials has become indispensable in a wide range of applications where high-performance materials with tailored surface properties are employed. The focus is on elucidating fundamental, molecular-level chemistry in these systems. The primary experimental tool is our unique laser-based Imaging of Radicals Interacting with Surfaces (IRIS) technique, which provides steady-state surface interaction data for plasma species. Two modifications planned for the IRIS apparatus are a hot-filament chemical vapor deposition source to provide an ion-free molecular beam, and a cooled substrate holder to access substrate temperatures 300 K. Gas-phase diagnostics and surface characterization will also be employed to provide a complete picture of the entire plasma system. Collectively, the experiments will produce critically important data on the plasma-surface interface unobtainable through other experimental techniques.The Intellectual Merit of the research lies in the potential for significant advancement in knowledge and basic understanding of halogenated plasma systems. IRIS surface-interaction measurements will be carefully correlated with gas-phase and surface analysis data to provide a virtually complete set of information on the plasma-surface interface. Internal and kinetic energy measurements for plasma species will provide insight into energy partitioning mechanisms unobtainable with other techniques. The intrinsic interdisciplinary nature of this research will afford students a broad exposure to and education in chemistry, engineering, and materials science, beyond the traditional boundaries in chemistry. The Broader Impacts of the research lie in the increased understanding of chemical processes occurring during etching and deposition from halogenated plasmas. These systems are recognized as important scientific and technologically-relevant processes with a wide range of applications where high performance materials are needed such as IC production and coatings technologies. A more complete understanding of the underlying chemistry in these systems could lead to manufacturing improvements with enormous economic impact across many industries. Furthermore, the PI is committed to broadening participation of underrepresented groups; she routinely supervises a research group with 50 percent female or underrepresented minority coworkers. The PI has been integral to development of the institution's materials program and plans additional educational activities with the work.
该项目的重点是通过基本等离子体科学和工程领域的NSF/DOE合作伙伴关系资助的,是为了提高对使用卤化的等离子体处理在等离子体加工过程中表面上发生的基本化学过程的理解。这些系统被广泛用于蚀刻和沉积高性能材料,并将继续用于制造下一代集成电路(IC)材料。在采用具有量身定制的表面特性的高性能材料的广泛应用中,材料的血浆处理变得必不可少。重点是阐明这些系统中的基本,分子水平的化学。主要的实验工具是我们基于激光的独特基于激光的成像与表面(IRIS)技术相互作用,该技术为血浆物种提供了稳态的表面相互作用数据。为虹膜设备计划的两种修改是一种热丝化学蒸气沉积源,可提供无离子的分子束,并使用冷却的底物支架来访问300 K的底物温度。气相诊断和表面特征也将提供整个血浆系统的完整图片。总的来说,这些实验将通过其他实验技术产生至关重要的数据。该研究的智力优点在于潜在的知识和基本了解卤化等离子体系统的潜力。虹膜表面相互作用的测量将与气相和表面分析数据仔细关联,以提供几乎完整的等离子体表面接口的信息。血浆物种的内部和动能测量将为能量分配机制提供其他技术的洞察力。这项研究的内在跨学科性质将为学生提供广泛的化学,工程和材料科学教育,超出了化学的传统界限。 该研究的更广泛的影响在于对卤化等离子体的蚀刻和沉积过程中发生的化学过程的了解增加。这些系统被认为是重要的科学和技术与技术相关的过程,并具有广泛的应用,其中需要高性能材料,例如IC生产和涂料技术。对这些系统中的基本化学反应的更全面了解可能会导致制造改进,并在许多行业中产生巨大的经济影响。此外,PI致力于扩大代表性不足的群体的参与;她经常监督一个女性或代表性不足的少数族裔同事的研究小组。 PI一直是该机构材料计划的开发不可或缺的一部分,并计划在工作中进行其他教育活动。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Ellen Fisher其他文献
The Hopkins Symptom Checklist. Assessing emotional distress in obstetric-gynecologic practice.
霍普金斯症状清单。
- DOI:
- 发表时间:
1976 - 期刊:
- 影响因子:1.9
- 作者:
Karl Rickels;Celso;Ronald S. Lipman;Derogatis Lr;Ellen Fisher - 通讯作者:
Ellen Fisher
Ellen Fisher的其他文献
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{{ truncateString('Ellen Fisher', 18)}}的其他基金
Unraveling Plasma-Assisted Catalysis: Toward Understanding Fundamental Molecule-Surface Interactions and Energy Partitioning Synergisms
揭示等离子体辅助催化:理解基本的分子-表面相互作用和能量分配协同作用
- 批准号:
1803067 - 财政年份:2018
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
Systematic Studies of the Dynamics, Energetics, and Surface Interactions of Plasma Species during Materials Processing
材料加工过程中等离子体物质的动力学、能量学和表面相互作用的系统研究
- 批准号:
1152963 - 财政年份:2012
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
Toward Fundamental Understanding of Plasma Processing Mechanisms: In Situ Studies of the Gas-Surface Interface During Materials Deposition and Modification
对等离子体处理机制的基本理解:材料沉积和改性过程中气体-表面界面的原位研究
- 批准号:
0911248 - 财政年份:2009
- 资助金额:
$ 45万 - 项目类别:
Continuing Grant
REU Site: Materials Chemistry Research: Synthesis, Characterization, and Device Fabrication
REU 网站:材料化学研究:合成、表征和器件制造
- 批准号:
0649263 - 财政年份:2007
- 资助金额:
$ 45万 - 项目类别:
Continuing Grant
Mechanistic Studies of Plasma Deposition and Etching for Integrated Circuit Materials
集成电路材料等离子沉积与刻蚀机理研究
- 批准号:
0137664 - 财政年份:2002
- 资助金额:
$ 45万 - 项目类别:
Continuing Grant
Acquisition of an Integrated Scanning Electron Microscope System
购置集成扫描电子显微镜系统
- 批准号:
0114093 - 财政年份:2001
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
Acquisition of XPS Instrumentation for a Departmental Materials Characterization Facility
为部门材料表征设施购置 XPS 仪器
- 批准号:
9977398 - 财政年份:1999
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
POWRE: Resonantly Enhanced Multiphoton Ionization for Measurement of Radical-Surface Reactivities
POWRE:用于测量自由基表面反应性的共振增强多光子电离
- 批准号:
9805815 - 财政年份:1998
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
Investigation of Plasma Deposition and Etching Mechanisms for Silicon-based Materials
硅基材料的等离子体沉积和刻蚀机理研究
- 批准号:
9812332 - 财政年份:1998
- 资助金额:
$ 45万 - 项目类别:
Continuing Grant
Investigation of Plasma Deposition Mechanisms for Silicon Dioxide and Silicon Nitride Films
二氧化硅和氮化硅薄膜的等离子体沉积机理研究
- 批准号:
9501157 - 财政年份:1995
- 资助金额:
$ 45万 - 项目类别:
Continuing Grant
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