Investigation of Plasma Deposition and Etching Mechanisms for Silicon-based Materials

硅基材料的等离子体沉积和刻蚀机理研究

基本信息

批准号：
9812332
负责人：
Ellen Fisher
金额：
$ 32.6万
依托单位：
Colorado State University
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
1998
资助国家：
美国
起止时间：
1998-12-01 至 2002-11-30
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9812332&HistoricalAwards=false
关键词：
Investigation Plasma Deposition Etching Mechanisms

项目摘要

This award is made to Colorado State University in support of the reseach of Prof. Ellen R. Fisher by the Advanced Materials Program in the Chemistry Division and the Electronic Materials Program in the Division of Materials Research. The focus of the research will be a fundamental study of plasma deposition and etching mechanisms for silicon-based materials as measured mainly by the imaging of radicals interacting with surfaces (IRIS). The objectives of the research are to (1) understand interactions between radicals and surfaces, (2) characterize the energetics of plasma-generated radicals, (3) explore the balance between etching and deposition in halogen-based plasmas, and (4) develop temporally-resolved experiments for pulsed plasma systems.Work elements include measuring the surface reactivity of plasma species during deposition and etching of semiconductor materials, determining the velocity distributions of radicals under different plasma conditions as well as for radicals scattering from surfaces, examining the effect of modulating the molecular beam source and characterizing the materials properties of plasma processed substrates through independent surface analysis. Plasma species studied will be methyl and methylene, alkoxy, hydroxy, halogen, hydrosilyl, silyl and halosilyl, all on silicon and silicon dioxide substrates.Plasma deposition and etching processes are widely employed in the microelectronics industry for processing silicon-based materials. This research will advance the molecular level understanding of the chemical processes which occur on semiconductor surfaces and are likely to find applications in gate oxides, passivation layers, dielectrics for integrated circuits, solar cells, flat panel displays and photoreceptors. Additionally, the highly interdisciplinary nature of the research will provide students with excellent training for careers in the microelectronics industry.

该奖项是向科罗拉多州立大学颁发的，以支持化学部的高级材料计划Ellen R. Fisher教授的研究，以及材料研究部的电子材料计划。这项研究的重点将是对基于硅材料的血浆沉积和蚀刻机制的基本研究，这主要是通过与表面相互作用（IRIS）相互作用的自由基的成像来衡量的。研究的目的是（1）了解自由基和表面之间的相互作用，（2）表征血浆生成的自由基的能量学，（（3）探索基于卤素的等离子体中蚀刻和沉积之间的平衡，（4）（4）在脉冲血浆系统中进行了脉冲元素的次级元素，包括脉冲元素的时间表。材料，确定在不同的血浆条件下自由基的速度分布以及从表面散射的自由基散射，从而检查了调节分子束源的效果，并通过独立的表面分析来表征血浆处理的底物的材料特性。所研究的血浆种类将是甲基和甲基，烷氧基，羟基，卤素，氢硅烷基，甲硅烷基和Halosilyl，为二氧化硅和二氧化硅底物。铂沉积和蚀刻过程广泛用于处理硅基材料中的微型电源工业。这项研究将提高对在半导体表面上发生的化学过程的分子水平理解，并可能在门氧化物，钝化层，集成电路的介电层，太阳能电池，平面面板中的介导和光感受器中找到应用。此外，研究的高度跨学科性质将为学生提供微电子行业职业的出色培训。