Investigation of Plasma Deposition and Etching Mechanisms for Silicon-based Materials

硅基材料的等离子体沉积和刻蚀机理研究

• 批准号: 9812332
• 负责人: Ellen Fisher
• 金额: $ 32.6万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-12-01 至 2002-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9812332&HistoricalAwards=false
• 关键词: Investigation; Plasma; Deposition; Etching; Mechanisms

This award is made to Colorado State University in support of the reseach of Prof. Ellen R. Fisher by the Advanced Materials Program in the Chemistry Division and the Electronic Materials Program in the Division of Materials Research. The focus of the research will be a fundamental study of plasma deposition and etching mechanisms for silicon-based materials as measured mainly by the imaging of radicals interacting with surfaces (IRIS). The objectives of the research are to (1) understand interactions between radicals and surfaces, (2) characterize the energetics of plasma-generated radicals, (3) explore the balance between etching and deposition in halogen-based plasmas, and (4) develop temporally-resolved experiments for pulsed plasma systems.Work elements include measuring the surface reactivity of plasma species during deposition and etching of semiconductor materials, determining the velocity distributions of radicals under different plasma conditions as well as for radicals scattering from surfaces, examining the effect of modulating the molecular beam source and characterizing the materials properties of plasma processed substrates through independent surface analysis. Plasma species studied will be methyl and methylene, alkoxy, hydroxy, halogen, hydrosilyl, silyl and halosilyl, all on silicon and silicon dioxide substrates.Plasma deposition and etching processes are widely employed in the microelectronics industry for processing silicon-based materials. This research will advance the molecular level understanding of the chemical processes which occur on semiconductor surfaces and are likely to find applications in gate oxides, passivation layers, dielectrics for integrated circuits, solar cells, flat panel displays and photoreceptors. Additionally, the highly interdisciplinary nature of the research will provide students with excellent training for careers in the microelectronics industry.

本奖项授予科罗拉多州立大学，以支持Ellen R.费希尔由化学部的先进材料计划和材料研究部的电子材料计划。研究的重点将是硅基材料的等离子体沉积和蚀刻机制的基础研究，主要通过与表面相互作用的自由基成像（IRIS）来测量。 研究的目标是（1）了解自由基和表面之间的相互作用，（2）表征等离子体产生的自由基的能量学，（3）探索卤素基等离子体中蚀刻和沉积之间的平衡，以及（4）开发脉冲等离子体系统的时间分辨实验。工作内容包括测量半导体材料沉积和蚀刻过程中等离子体物质的表面反应性，确定不同等离子体条件下自由基的速度分布以及自由基从表面散射的速度分布，检查调制分子束源的效果，并通过独立的表面分析来表征等离子体处理基板的材料特性。研究的等离子体物种将是甲基和亚甲基、烷氧基、羟基、卤素、氢化硅烷基、硅烷基和卤代硅烷基，所有这些都在硅和二氧化硅衬底上。这项研究将推进分子水平上的理解，发生在半导体表面的化学过程，并有可能在栅极氧化物，钝化层，集成电路，太阳能电池，平板显示器和感光器的光刻胶中找到应用。此外，该研究的高度跨学科性质将为学生提供微电子行业职业的良好培训。