CAREER: Super Junction Power Semiconductor Devices

职业：超级结功率半导体器件

• 批准号: 0237420
• 负责人: Zheng Shen
• 金额: $ 40万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-01 至 2004-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0237420&HistoricalAwards=false
• 关键词: CAREER; Super; Junction; Power; Semiconductor

Advances in power semiconductor technology in the past two decades have led to the rapid proliferation of power electronics into telecommunications, computers, consumer, transportation, industrial applications, and all forms of environment-friendly energy conversion. However, the performance of state of the art power semiconductor devices is quickly approaching the theoretical limits of silicon. This CAREER proposal aims to investigate an innovative device concept termed super junction (SJ) that is capable of improving the power handling capability of conventional silicon power devices by orders of magnitude, and effectively integrate the research with education activities. The research project has five objectives: (1) to investigate novel super-junction MOSFET structures through extensive device modeling and simulation, which overcome the limitations of the current device design and fabrication methods; (2) to develop a practical SJ fabrication process by integrating the high aspect ratio MEMS techniques with conventional planar DMOS processes; (3) to extend the basic super-junction concept into other device types including the high voltage, fast-recovery Schottky freewheeling diode; (4) to study circuit application issues that are inherent to the unique characteristics of SJ devices such as electromagnetic interference (EMI) and safe operating area (SOA) degradation; and (5) to extend the super-junction concept to SiC and other wide bandgap semiconductor materials. The unique contribution of the proposed research is in the co-development of novel super-junction device and processing concepts; the integration of MEMS and DMOS technologies; the integrated study of material, processing, device, and circuit; the interactive use of modeling and experimental means; and the close university-industry partnership. The outcome of the proposed research will significantly advance knowledge in the field of power semiconductors and power electronics and provide a foundation for the next-generation, high-efficiency, low-cost, light-weight, and compact power electronics technology to meet the society's needs in conserving energy and environments.The rapid proliferation of power electronics will generate a serious demand for power-electronics-proficient electrical engineers in the United States. The education plan addresses these emerging needs. The primary goal of the CAREER education plan is to integrate the proposed research into the existing power electronics and solid-state electronics curriculum. It consists of five components: (1) developing new courses to meet the emerging educational needs in power electronics, (2) improving and enriching existing courses by incorporating research materials into lectures and projects, (3) integrating research and teaching through student participation in research, (4) mentoring students, especially women and underrepresented minority students, and providing community services, and (5) facilitating close interaction between students and industry. The proposed education plan will help meet the emerging demand for human resource development and significantly enhance the university's research and education infrastructure. The student mentoring and community outreaching activities will broaden the participation of underrepresented minority groups in science and engineering.

过去二十年，功率半导体技术的进步导致电力电子技术迅速扩散到电信、计算机、消费、交通、工业应用以及各种形式的环保能源转换领域。然而，最先进的功率半导体器件的性能正在迅速接近硅的理论极限。该职业提案旨在研究一种称为超级结（SJ）的创新器件概念，它能够将传统硅功率器件的功率处理能力提高几个数量级，并将研究与教育活动有效地结合起来。该研究项目有五个目标：（1）通过广泛的器件建模和仿真研究新型超级结MOSFET结构，克服当前器件设计和制造方法的局限性； (2) 将高深宽比MEMS技术与传统平面DMOS工艺相结合，开发实用的SJ制造工艺； (3) 将基本的超级结概念扩展到其他器件类型，包括高电压、快速恢复肖特基续流二极管； (4) 研究超结器件独特特性所固有的电路应用问题，例如电磁干扰（EMI）和安全工作区（SOA）退化； (5)将超级结概念扩展到SiC和其他宽带隙半导体材料。所提出的研究的独特贡献在于新型超级结器件和处理概念的共同开发； MEMS和DMOS技术的集成；材料、加工、器件、电路的综合研究；建模和实验手段的交互使用；以及紧密的大学与工业界合作伙伴关系。拟议研究的成果将显着推进功率半导体和电力电子领域的知识，并为下一代高效率、低成本、轻量级和紧凑型电力电子技术奠定基础，以满足社会在节约能源和环境方面的需求。电力电子的快速普及将对美国对精通电力电子的电气工程师产生巨大的需求。教育计划解决了这些新出现的需求。职业教育计划的主要目标是将拟议的研究整合到现有的电力电子和固态电子课程中。它由五个部分组成：（1）开发新课程以满足电力电子领域新兴的教育需求，（2）通过将研究材料纳入讲座和项目来改进和丰富现有课程，（3）通过学生参与研究将研究和教学结合起来，（​​4）指导学生，特别是女性和代表性不足的少数族裔学生，并提供社区服务，以及（5）促进学生与行业之间的密切互动。拟议的教育计划将有助于满足人力资源开发的新需求，并显着增强大学的研究和教育基础设施。学生辅导和社区外展活动将扩大代表性不足的少数群体对科学和工程的参与。