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CAREER: Super Junction Power Semiconductor Devices

CAREER: Super Junction Power Semiconductor Devices
职业:超级结功率半导体器件
批准号:
0454835
负责人:
Zheng Shen
金额:
$0.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-08-27 至 2009-06-30

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中文摘要
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英文摘要
Advances in power semiconductor technology in the past two decades have led to the rapid proliferation of power electronics into telecommunications, computers, consumer, transportation, industrial applications, and all forms of environment-friendly energy conversion. However, the performance of state of the art power semiconductor devices is quickly approaching the theoretical limits of silicon. This CAREER proposal aims to investigate an innovative device concept termed super junction (SJ) that is capable of improving the power handling capability of conventional silicon power devices by orders of magnitude, and effectively integrate the research with education activities. The research project has five objectives: (1) to investigate novel super-junction MOSFET structures through extensive device modeling and simulation, which overcome the limitations of the current device design and fabrication methods; (2) to develop a practical SJ fabrication process by integrating the high aspect ratio MEMS techniques with conventional planar DMOS processes; (3) to extend the basic super-junction concept into other device types including the high voltage, fast-recovery Schottky freewheeling diode; (4) to study circuit application issues that are inherent to the unique characteristics of SJ devices such as electromagnetic interference (EMI) and safe operating area (SOA) degradation; and (5) to extend the super-junction concept to SiC and other wide bandgap semiconductor materials. The unique contribution of the proposed research is in the co-development of novel super-junction device and processing concepts; the integration of MEMS and DMOS technologies; the integrated study of material, processing, device, and circuit; the interactive use of modeling and experimental means; and the close university-industry partnership. The outcome of the proposed research will significantly advance knowledge in the field of power semiconductors and power electronics and provide a foundation for the next-generation, high-efficiency, low-cost, light-weight, and compact power electronics technology to meet the society's needs in conserving energy and environments.The rapid proliferation of power electronics will generate a serious demand for power-electronics-proficient electrical engineers in the United States. The education plan addresses these emerging needs. The primary goal of the CAREER education plan is to integrate the proposed research into the existing power electronics and solid-state electronics curriculum. It consists of five components: (1) developing new courses to meet the emerging educational needs in power electronics, (2) improving and enriching existing courses by incorporating research materials into lectures and projects, (3) integrating research and teaching through student participation in research, (4) mentoring students, especially women and underrepresented minority students, and providing community services, and (5) facilitating close interaction between students and industry. The proposed education plan will help meet the emerging demand for human resource development and significantly enhance the university's research and education infrastructure. The student mentoring and community outreaching activities will broaden the participation of underrepresented minority groups in science and engineering.
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Scalable Multilevel Multicell Power Architectures Leveraging Cost Effective GaN Power IC Technology
  • 批准号:
    1711485
  • 项目类别:
    Standard Grant
  • 资助金额:
    $36.0万
  • 财政年份:
    2017
  • 负责人:
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US-Ireland Collaborative Research on Nanostructured Gallium Nitride (GaN) Power Semiconductor Devices
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  • 项目类别:
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  • 资助金额:
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  • 财政年份:
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  • 负责人:
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CAREER: Super Junction Power Semiconductor Devices
An Electromagnetic Compatibility Laboratory
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