Polycrystalline Silicon Carbide Micro- And Nanoelectromechanical Systems

这项提议的目标是促进碳化硅(SIC)、微电子机械系统(MEMS)和纳米电子机械系统(NEMS)的最新发展。主要的焦点是多晶碳化硅和表面微加工作为多晶硅表面微加工的平行。因此，拟议的研究将制造和评估一系列表面微机械器件的性能，这些器件一起使系统地了解材料特性和多晶硅器件性能之间的关系。虽然MEMS规模的器件将在我们的实验室中制造和表征，但NEMS规模的器件(例如，谐振纳米束)将与加州理工大学的Michael Roukes教授合作制造和表征，他对这项研究项目的贡献将得到补充项目的资助。支持这一建议目标的主要目标是：(1)用于沉积温度约600℃的多晶硅的低压化学气相沉积(LPCVD)技术；(Ii)用于多晶硅的受控原位掺杂能力；(Iii)清楚地了解多晶碳化硅材料的性质及其与沉积条件的关系；以及(Iv)洞察与材料性质有关的器件性能。600℃的沉积温度范围很重要(从热预算和工艺兼容性的角度来看)，因为占主导地位的MEMS材料多晶硅是在这个温度范围内沉积的。这项研究将建立在我们团队最近在CWRU建造的独特的大型LPCVD炉的基础上。该炉的尺寸适合于大批量生产碳化硅薄膜，因此将为拟议的研究提供支持平台。智力优势：碳化硅以其出色的材料性能而闻名，这使得MEMS/NEMS在恶劣环境(例如，存在高温、腐蚀性介质、腐蚀条件、高冲击载荷)下的应用成为可能。其固有的生物兼容性使其成为MEMS治疗和诊断设备的领先材料。多晶硅MEMS/NEMS尖端技术的发展将为该领域的进步和发展开辟新的可能性。例如，SIC MEMS/NEMS正被用于无线通信和微型发电应用。广泛的影响：拟议的项目在教育和商业应用方面的影响超出了研究范围。所获得的知识将积极融入我们的研究生和本科生的研究经验和教育课程，并向高中生传播。研究成果将通过我们直接和间接的产业合作实现商业化。最后，碳化硅作为一种高性能材料，在许多非MEMS/NEMS应用(如涂层、电介质、高功率电子设备)中引起了人们的兴趣。

The goal of this proposal is to advance the state-of-the-art in silicon carbide (SiC)microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS). The primary focus is on polycrystalline SiC (poly-SiC) and surface micromachining as a parallel to polysilicon surface micromachining. Accordingly, the proposed research will fabricate and evaluate the performance of a range of surface micromachined devices that together enable a systematic understanding of the relationships between material properties and device performance for poly-SiC. While the MEMS-scale devices will be fabricated and characterized in our laboratories, the NEMS-scale devices (e.g., resonating nano-beams) will be fabricated and characterized in collaboration with Prof. Michael Roukes of Caltech, whose contribution to this research project will be supported by funding from complementary projects.The central objectives supporting the goal of this proposal are: (1) a low pressure chemical vapor deposition (LPCVD) technology for poly-SiC with deposition temperatures around 600C; (ii) a controlled in-situ doping capability for poly-SiC; (iii) a clear understanding of the poly-SiC material properties and their relation to deposition conditions; and (iv) insight into device performance as related to material properties. The 600C deposition temperature range is significant (from a thermal budget and process compatibility point of view) since polysilicon, the dominant MEMS material, is deposited in this temperature range. This research will build on a unique, large-scale LPCVD furnace recently constructed by our group at CWRU. The furnace is sized for high-volume production of SiC films and thus will provide an enabling platform for the proposed research.Intellectual Merit: SiC is known for its outstanding material properties, which are enabling for applications of MEMS/NEMS in harsh environments (e.g., in presence of high temperatures, corrosive media, erosive conditions, high impact loads) over silicon. Its inherent biocompatibility makes it a leading material for MEMS therapeutic and diagnostic devices. Advancement of poly-SiC MEMS/NEMS state-of-the-art will open new possibilities for advancement and growth of the field. For example, SiC MEMS/NEMS are being pursued for wireless communication and for micro-power generation applications.Broader Impact: The proposed project has impact beyond research, in both education and commercial applications. The knowledge gained will be actively incorporated into our graduate and undergraduate research experiences and educational courses, and disseminated to high school students. The research results will be commercialized through our direct and indirect industrial collaborations. Finally, SiC, being a high performance material, is of interest in many non-MEMS/NEMS applications (e.g., coatings, dielectrics, high power electronics).