SHF:Small: Compact Modeling of Spintronic Magnetic Tunnel Junctions

现在人们普遍认为，经典晶体管技术的微缩技术即将结束。需要开发新颖的新兴设备技术，以继续微电子的发展，多年来推动了计算、通信、国防、自动化、运输和健康领域的发展。许多技术正在考虑用于超越半导体发展的下一步。磁隧道结 (MTJ) 是一项备受关注的技术。该技术展现出出色的性能、密度和功率特性，并且由于这些设备固有的非易失性而特别值得注意。一种直接的应用是作为固态存储器的低功耗替代品，称为磁性随机存取存储器（MRAM）。除了推进最先进的计算技术之外，该项目的其他成果还将增强研究生和本科生的教育经验，同时将重要的新技术转移到美国工业界。为了支持使用这种新技术来设计新的集成电路和发明新颖的应用，需要开发表征这些新兴设备的速度、功率、耐用性和可靠性的模型。该项目的重点是开发准确且高效的磁隧道结模型。这些模型将准确捕获二端和三端 MTJ 的电、热和磁行为，从而支持下一代大规模异构集成电路的开发。

It is now well accepted that scaling of classical transistor technology is coming to an end. Novel emerging device technologies will need to be developed to continue the microelectronics evolution that has driven the world of computing, communications, defense, automation, transportation, and health for so many years. Many technologies are being considered for this next step beyond the semiconductor evolution. One technology that has demanded a great deal of attention is magnetic tunnel junctions (MTJ). This technology exhibits outstanding performance, density, and power characteristics, and is particularly noteworthy due to the inherent nonvolatile nature of these devices. One immediate application is as a low power replacement for solid-state memory, and is called magnetic randomly accessible memory (MRAM). In addition to advancing the state-of-the-art in computing, other outcomes of this project will enhance the graduate and undergraduate educational experience while transferring important new technology to US industry. To support the use of this novel technology in designing new integrated circuits and inventing novel applications, models will need to be developed that characterize the speed, power, endurance, and reliability of these emerging devices. The focus of this project is to develop both accurate and efficient models of magnetic tunnel junctions. These models will accurately capture the electrical, thermal, and magnetic behavior of two and three terminal MTJ, and will thereby support the development of next generation, large scale, heterogeneous integrated circuits.