SHF:Small: Compact Modeling of Spintronic Magnetic Tunnel Junctions

现在人们普遍认为，经典晶体管技术的规模化即将结束。需要开发新的新兴器件技术，以继续推动微电子技术的发展，微电子技术多年来一直推动着计算、通信、国防、自动化、运输和健康领域的发展。许多技术正在考虑超越半导体发展的下一步。需要大量关注的一种技术是磁性隧道结（MTJ）。该技术具有出色的性能、密度和功率特性，由于这些器件固有的非易失性特性而特别值得注意。一个直接的应用是作为固态存储器的低功率替代品，并且被称为磁性随机可访问存储器（MRAM）。除了推进最先进的计算技术外，该项目的其他成果将增强研究生和本科生的教育经验，同时将重要的新技术转移到美国工业。为了支持在设计新的集成电路和发明新的应用中使用这种新技术，需要开发表征这些新兴器件的速度、功率、耐久性和可靠性的模型。该项目的重点是开发准确和有效的磁性隧道结模型。这些模型将准确地捕获两个和三个终端MTJ的电，热和磁行为，从而支持下一代，大规模，异构集成电路的发展。

It is now well accepted that scaling of classical transistor technology is coming to an end. Novel emerging device technologies will need to be developed to continue the microelectronics evolution that has driven the world of computing, communications, defense, automation, transportation, and health for so many years. Many technologies are being considered for this next step beyond the semiconductor evolution. One technology that has demanded a great deal of attention is magnetic tunnel junctions (MTJ). This technology exhibits outstanding performance, density, and power characteristics, and is particularly noteworthy due to the inherent nonvolatile nature of these devices. One immediate application is as a low power replacement for solid-state memory, and is called magnetic randomly accessible memory (MRAM). In addition to advancing the state-of-the-art in computing, other outcomes of this project will enhance the graduate and undergraduate educational experience while transferring important new technology to US industry. To support the use of this novel technology in designing new integrated circuits and inventing novel applications, models will need to be developed that characterize the speed, power, endurance, and reliability of these emerging devices. The focus of this project is to develop both accurate and efficient models of magnetic tunnel junctions. These models will accurately capture the electrical, thermal, and magnetic behavior of two and three terminal MTJ, and will thereby support the development of next generation, large scale, heterogeneous integrated circuits.