NER/SNB: High-frequency, three-dimensional integrated CNFET/CMOS technology

提案编号：508319标题：NER/SNB：高频三维集成CNFET/CMOS技术Inst：哥伦比亚大学PI：Ken Shepard碳纳米管场效应晶体管(CNFET)已成为传统深亚微米硅晶体管的潜在替代场效应技术。虽然这些器件在物理原理上与互补金属氧化物半导体(CMOS)硅场效应晶体管类似，但在电路中提供了几种可能的优势，包括减少短沟道效应、降低变化性的潜在分子级控制以及混合三维集成，其中有源器件(底部的CMOS和顶部的CNFET)将夹层金属互连层。要实现这些潜在优势中的任何一个，这些器件必须与硅CMOSFET共存，并且必须能够利用现有的CMOS工艺技术投资。通过将兼容CMOS的CNFET制造与全面的以电路为中心的器件表征相结合，PI寻求进一步探索CNFET在实际微电子应用中的潜在优势，同时追求将CNFET晶体管与传统的深亚微米CMOS技术相结合的可行电路的开发。

Proposal no: 508319Title: NER/SNB: High-frequency, three-dimensional integrated CNFET/CMOS technologyInst: Columbia UniversityPI: Ken Shepard Carbon nano-tube field-effect transistors (CNFET) have emerged as a potential alternative field-effect technology to conventional deep-submicron silicon transistors. While operating under physical principles similar to complementary metal-oxide semiconductor (CMOS) silicon field-effect transistors, these devices offer several possible advantages in circuits including reduced short-channel effects, potential molecular-level control to reduce variability, and a hybrid three-dimensional integration in which active devices (CMOS on the bottom and CNFET on the top) will sandwich the metal interconnect layers. For any of these potential advantages to be realized, these devices must coexist with silicon CMOS FETs and must be able to leverage the existing investment in CMOS process technology. By combining CMOS-compatible CNFET fabrication with comprehensive circuit-focused device characterization, the PIs seek to further explore the potential advantage of CNFETs for real microelectronics applications while pursuing the development of viable circuits that combine CNFET transistors with conventional deep submicron CMOS technology.