CAREER: Perovskite Buffer Layers for Compound Semiconductor-Silicon Heteroepitaxy

职业：用于化合物半导体-硅异质外延的钙钛矿缓冲层

• 批准号: 0935010
• 负责人: Brian Willis
• 金额: $ 0.37万
• 依托单位: University of Connecticut
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-01-01 至 2010-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0935010&HistoricalAwards=false
• 关键词: CAREER; Perovskite; Buffer; Layers; Compound

This research program will investigate the use of perovskite buffer layers for compound semiconductor-on-silicon heteroepitaxy. Perovskite buffer layers offer potential solutions to lattice mismatch challenges in heteroepitaxy. During the growth of perovskite films on silicon, oxygen diffuses to the interface and creates an amorphous SiOx region that separates the perovskite epitaxial layer from the silicon substrate. The perovskite layer can then act as a template for subsequent epitaxial layers such as compound semiconductors. The research program will determine if the amorphous SiOx interface sufficiently relieves the lattice mismatch strain generated in the epitaxial layers and also traps dislocation defects at the interface. Perovskite "buffer" layers may therefore enable low defect density heteroepitaxy on silicon substrates. The technology has enormous potential to create new designs that integrate optically active devices with the power of silicon CMOS logic. The research will provide new scientific understanding of metalorganic chemical vapor deposition and atomic layer deposition methods to be used for the growth of strontium nucleation layers and SrTiO3 buffer layers. Experimental investigations will develop the chemistry and reaction engineering fundamentals necessary for successful growth of high quality epitaxial perovskite layers on silicon. The perovskite buffer layers will be used as substrates for III-V/silicon heteroepitaxy. Investigations will analyze the gas phase and surface reaction chemistry of the strontium and titanium organometallic precursors. Research efforts will optimize the materials quality through reactor design and operation. Special challenges include controlling precursor transport to the reaction zone, avoiding premature adduct formation and/or decomposition, and achieving high quality monocrystalline, epitaxial layers.

本研究计划将探讨使用钙钛矿缓冲层的化合物外延硅上的异质外延。 Peroxide缓冲层为异质外延中的晶格失配挑战提供了潜在的解决方案。 在硅上钙钛矿膜的生长期间，氧扩散到界面并产生将钙钛矿外延层与硅衬底分离的非晶SiOx区域。 然后，钙钛矿层可以充当后续外延层（例如化合物半导体）的模板。 该研究计划将确定非晶SiOx界面是否足以缓解外延层中产生的晶格失配应变，并在界面处捕获位错缺陷。 因此，超导“缓冲”层可以实现硅衬底上的低缺陷密度异质外延。 该技术具有巨大的潜力，可以创造出将光学有源器件与硅CMOS逻辑功能集成在一起的新设计。 该研究将为金属有机化学气相沉积和原子层沉积方法用于锶成核层和SrTiO 3缓冲层的生长提供新的科学认识。 实验研究将开发成功生长硅上高质量外延钙钛矿层所需的化学和反应工程基础。 钙钛矿缓冲层将用作III-V/硅异质外延的衬底。 调查将分析锶和钛的有机金属前体的气相和表面反应化学。 研究工作将通过反应堆的设计和运行优化材料质量。 特殊的挑战包括控制前体输送到反应区，避免过早的加合物形成和/或分解，并实现高质量的单晶外延层。