Spray-on Hydrogenated Films for Solar Cells

用于太阳能电池的喷涂氢化薄膜

基本信息

  • 批准号:
    LP0989593
  • 负责人:
  • 金额:
    $ 26.66万
  • 依托单位:
  • 依托单位国家:
    澳大利亚
  • 项目类别:
    Linkage Projects
  • 财政年份:
    2010
  • 资助国家:
    澳大利亚
  • 起止时间:
    2010-01-01 至 2013-11-30
  • 项目状态:
    已结题

项目摘要

A successful project will contribute to a reduction in the cost of photovoltaic solar energy. This goal might be reached directly, via the development of spray-on hydrogenated films, or indirectly, through an improved knowledge of hydrogen passivation. Either way, the project will provide Australian Partner Investigator, Spark Solar, with a manufacturing edge over its global competitors. In so doing, it will support the burgeoning photovoltaic industry in Australia, providing jobs in manufacturing and research, and increasing the viability of photovoltaic energy as an alternative to fossil fuels. The project will also help keep Australia at the forefront of advances in photovoltaics and semiconductors.
一个成功的项目将有助于降低光伏太阳能的成本。这一目标可以通过开发喷涂氢化膜直接实现,也可以通过改进氢钝化知识间接实现。无论哪种方式,该项目都将为澳大利亚合作伙伴研究者Spark Solar提供优于其全球竞争对手的制造优势。通过这样做,它将支持澳大利亚蓬勃发展的光伏产业,提供制造和研究方面的就业机会,并提高光伏能源作为化石燃料替代品的可行性。该项目还将帮助澳大利亚保持在光电子和半导体领域的领先地位。

项目成果

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Prof Andres Cuevas其他文献

Prof Andres Cuevas的其他文献

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{{ truncateString('Prof Andres Cuevas', 18)}}的其他基金

Transparent metal oxides, a window of opportunity for silicon solar cells
透明金属氧化物,硅太阳能电池的机会之窗
  • 批准号:
    DP150104331
  • 财政年份:
    2015
  • 资助金额:
    $ 26.66万
  • 项目类别:
    Discovery Projects
The development of inexpensive negatively charged films to increase the efficiency of commercial solar cells
开发廉价的带负电薄膜以提高商业太阳能电池的效率
  • 批准号:
    LP110100567
  • 财政年份:
    2011
  • 资助金额:
    $ 26.66万
  • 项目类别:
    Linkage Projects
New Directions in Silicon Solar Cell Technology
硅太阳能电池技术的新方向
  • 批准号:
    DP0663892
  • 财政年份:
    2006
  • 资助金额:
    $ 26.66万
  • 项目类别:
    Discovery Projects
Combined reactor for the plasma-enhanced chemical vapour deposition (PECVD) of amorphous layers of silicon, silicon nitride and silicon oxide, and for Reactive Ion Etching
用于硅、氮化硅和氧化硅非晶层等离子增强化学气相沉积 (PECVD) 以及反应离子蚀刻的组合反应器
  • 批准号:
    LE0561240
  • 财政年份:
    2005
  • 资助金额:
    $ 26.66万
  • 项目类别:
    Linkage Infrastructure, Equipment and Facilities
Overcoming performance limitations in multicrystalline silicon solar cells
克服多晶硅太阳能电池的性能限制
  • 批准号:
    LP0347174
  • 财政年份:
    2003
  • 资助金额:
    $ 26.66万
  • 项目类别:
    Linkage Projects
ADVANCED PHYSICS AND CHARACTERISATION OF SILICON MATERIALS AND DEVICES
硅材料和器件的先进物理和表征
  • 批准号:
    DP0209310
  • 财政年份:
    2002
  • 资助金额:
    $ 26.66万
  • 项目类别:
    Discovery Projects

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具有高机械柔性的氢化非晶氧化铟基透明导电氧化物薄膜的开发
  • 批准号:
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表面形貌控制和硼掺杂研究氢化DLC薄膜的低摩擦现象
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    15K17964
  • 财政年份:
    2015
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  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
EAPSI: Investigating the Role of Sulfur on the Oxidation of Sulfur-Doped Hydrogenated Amorphous Carbon Films
EAPSI:研究硫对掺硫氢化非晶碳膜氧化的作用
  • 批准号:
    0813308
  • 财政年份:
    2008
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  • 项目类别:
    Fellowship Award
Study on the formation of hydrogenated silicon films and silicon nano-structural materials obtained by electron-beam-induced-chemical vapor deposition at ultra low temperature
超低温电子束诱导化学气相沉积氢化硅薄膜及硅纳米结构材料的研究
  • 批准号:
    18550014
  • 财政年份:
    2006
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A Combined Experimental and Theoretical Investigation of the Plasma-Surface Interactions in Plasma Deposition of Hydrogenated Amorphous and Nanocrystalline Silicon Films
氢化非晶硅和纳米晶硅薄膜等离子体沉积中等离子体-表面相互作用的实验与理论相结合的研究
  • 批准号:
    0078711
  • 财政年份:
    2000
  • 资助金额:
    $ 26.66万
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    Continuing Grant
GROWTH MECHANISM AND PROPERTIES OF HYDROGENATED AMORPHOUS CARBON THIN FILMS
氢化非晶碳薄膜的生长机理及性能
  • 批准号:
    10650314
  • 财政年份:
    1998
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Formation and properties of amorphous hydrogenated carbon films with low hydrogen concentration
低氢浓度非晶氢化碳薄膜的形成及性能
  • 批准号:
    10650689
  • 财政年份:
    1998
  • 资助金额:
    $ 26.66万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Fundamental Research in Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon and Nanocystalline Silicon Films from SiH4/H2/Ar Discharges
SiH4/H2/Ar 放电等离子体增强化学气相沉积氢化非晶硅和纳米晶硅薄膜的基础研究
  • 批准号:
    9713280
  • 财政年份:
    1997
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Highly accurate measurement of crystallization temperature of hydrogenated amorphous silicon films
高精度测量氢化非晶硅薄膜的结晶温度
  • 批准号:
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  • 财政年份:
    1993
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Characterization of Intrinsic and Doped Hydrogenated Amor phous Silicon Thin Films Produced by Microwave Discharges inToroidal and Linear Plasma Systems
环形和线性等离子体系统中微波放电产生的本征和掺杂氢化非晶硅薄膜的表征
  • 批准号:
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  • 财政年份:
    1990
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