Atomic Layer Deposition for Large-Area Sub-10 Nanometer Patterning for Super Absorbing Optical Devices
Atomic Layer Deposition for Large-Area Sub-10 Nanometer Patterning for Super Absorbing Optical Devices
批准号:
1562057
负责人:
Qiaoqiang Gan
金额:
$30.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-04-01 至 2019-07-31
中文摘要
纳米制造是许多应用的重要驱动力,包括纳米材料、纳米电子学和纳米光子学。在过去的几十年里,我们见证了纳米制造能力的重大进步。可以使用各种自上而下和自下而上的方法来制造不同的预先设计的图案,小到纳米级。然而,使用传统的制备技术来大面积地制造具有10纳米以下特征的纳米结构仍然是一个巨大的挑战。这种小规模的结构是开发新应用程序所必需的。使用纳米级天线结构,局部光场增强或“热点”是可能的。金属纳米粒子之间的间隙越小,就会产生更强的“热点”。因此,一种经济实惠的、具有10纳米以下特征的大面积纳米颗粒的制造方法是非常必要的。该奖项将利用原子层沉积工艺开发一种廉价的纳米制造方法,以制造具有精确控制间隙的表面纳米颗粒,该表面纳米颗粒可以在大范围内有效地将光场聚集到10纳米以下。这一跨学科的努力将把纳米制造、计算电磁学、光电子学和光学传感联系起来,并将为学生提供一个很好的机会来发展在全球市场上取得成功所需的技能、价值观和广泛的视野,以及在复杂、多学科项目中的领导地位。该奖项将在使用纳米结构进行光管理的最新成功的基础上,探索使用这种新的纳米制造方法来制造具有可控的、超窄(亚10 nm)间隙的超级吸收超材料表面结构或超表面的潜力。具体地说,该奖项将探索可负担得起的制造工艺,以生产由原子层沉积(ALD)介电薄膜定义的分离距离可控的金属纳米管,厚度精度约为0.1 nm。这种能力将在极深的亚波长尺度上导致光-物质相互作用的革命性进展。与预先设计的超材料腔结构相结合,入射光可以有效地捕获在纳米GaP中,从而产生强烈的局域场增强。通过控制纳米管的几何参数,特别是间隙尺寸,可以接近等离子体增强的极限,并且可以方便地在大范围内表征。在这个项目中,ALD定义的薄膜将与周期性和随机的纳米颗粒相结合,制造大面积的超吸收准表面,这将使新型芯片上能量收集、转换和生物传感应用的发展成为可能。
英文摘要
Nanomanufacturing is an important driving force for many applications, including nanomaterials, nanoelectronics, and nanophotonics. In the past decades, we have witnessed significant advances in nanomanufacturing capabilities. Different pre-designed patterns down to nanometer scale can be fabricated using various top-down and bottom-up methods. However, it is still a great challenge to manufacture nanostructures with sub-10 nanometer features over large areas using conventional fabrication techniques. Such small-scale structures are needed for the development of new applications. Using nano-scale antenna structures, localized optical field enhancements or 'hot-spots' are possible. Smaller gaps between the metallic nanopatterns will result in stronger 'hot spots'. Therefore, an affordable manufacturing method for large-area nanopatterning with sub-10 nanometer features is highly desirable. This award will employ the atomic layer deposition process to develop an inexpensive nanomanufacturing method to fabricate surface nanopatterns with accurately controlled gaps that can efficiently concentrate light field down to sub-10 nanometer scales over large areas. This interdisciplinary effort will link nanomanufacturing, computational electromagnetics, optoelectronics and optical sensing, and will provide a great opportunity for students to develop skills, values, and broad perspectives necessary for success in the global marketplace and for leadership in complex, multidisciplinary projects.Building on recent successes in light management using nanostructures, this award will explore the potential to use this new nanomanufacturing method to fabricate super absorbing metamaterial surface structures or metasurfaces with controllable, ultra-narrow (sub-10nm) gaps. Specifically, this award will explore affordable fabrication processes to produce metallic nanopatterns with controllable separation distances defined by atomic layer deposited (ALD) dielectric films with the thickness accuracy of ~0.1nm. Such a capability will result in revolutionary advances in light-matter interactions at extremely deep subwavelength scales. Combined with pre-designed metamaterial cavity structures, incident light can be trapped within the nanogaps efficiently, resulting in a strongly enhanced localized field. By controlling the geometric parameters of nanopatterns, especially the gap dimension, the ultimate limit for plasmonic enhancement may be approached and be characterized conveniently over large areas. In this project, ALD-defined films will be combined with periodic and random nanopatterns to manufacture large area super absorbing metasurfaces, which will enable the development of novel on-chip energy collection, conversion and biosensing applications.
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