SHF: Small: Approximate-Computing Enabled Robust 3D NAND Flash Memories

SHF：小型：支持近似计算的稳健 3D NAND 闪存

• 批准号: 1718080
• 负责人: Jun Yang
• 金额: $ 40万
• 依托单位: University of Pittsburgh
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-08-15 至 2021-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1718080&HistoricalAwards=false
• 关键词: SHF; Small; Approximate; Computing; Enabled

Traditional NAND flash has been prevalently used as the storage for essentially all computer systems. Increasing the NAND flash capacity, to meet the requirement of today's ever increasing data volumes, has been enabled by technology scaling. However, further scaling has come to a screeching halt due to degraded performance and reliability in planar NAND cells. 3D NAND flash memory design thus opens a new direction for continuous density increase, as capacity can be multiplied by stacking more cells in vertical direction without further shrinking the cell sizes. Nonetheless, 3D NAND also faces new challenges in reliability due to its new architecture. Using strong error correction mechanisms is limited by potential high power consumption, implementation area and long operation latency. On the other hand, there is a trend in relaxing data accuracy during computing and data stores as many of today's applications are tolerant to a small amount of errors. This project aims to leverage such approximate storage of data to improve the reliability, performance and endurance of 3D NAND flash memories. The research will first construct reliability models to guide architecture designs. Then, mechanisms for achieving approximate storage through tolerating errors and approximate programming will be developed and evaluated. Finally, new techniques will be developed to exploit approximation for mitigating disturbance, cell-to-cell interference, retention loss, and for improving performance as well as endurance of a 3D flash memory. The success of this project will fuel the continuous scaling of the mainstream storage technology. It will also enable pervasive adoption of 3D NAND flash memories for embedded systems, personal computers and clouds, which will have a tremendous drive for the innovations in storage industry. Trained students will become future taskforce to continue technology innovations in computing.

传统的NAND闪存已被用作基本上所有计算机系统的存储。通过技术扩展，可以提高NAND闪存容量，以满足当今不断增长的数据量的要求。然而，由于平面NAND单元的性能和可靠性下降，进一步的缩放已经戛然而止。因此，3D NAND闪存设计为连续密度增加开辟了新的方向，因为容量可以通过在垂直方向上堆叠更多单元而倍增，而无需进一步缩小单元尺寸。尽管如此，3D NAND由于其新的架构，在可靠性方面也面临着新的挑战。使用强纠错机制受到潜在的高功耗、实现面积和长操作延迟的限制。另一方面，在计算和数据存储期间存在放松数据准确性的趋势，因为当今的许多应用容忍少量错误。该项目旨在利用这种近似的数据存储来提高3D NAND闪存的可靠性，性能和耐用性。本研究将首先建立可靠性模型以指导建筑设计。然后，通过容忍错误和近似编程实现近似存储的机制将被开发和评估。最后，将开发新的技术来利用近似来减轻干扰、单元间干扰、保持损失，以及提高3D闪存的性能和耐久性。该项目的成功将推动主流存储技术的持续扩展。它还将使嵌入式系统、个人电脑和云计算广泛采用3D NAND闪存，这将极大地推动存储行业的创新。经过培训的学生将成为未来的工作队，继续在计算技术创新。

项目成果

ScaleDNN: Data Movement Aware DNN Training on Multi-GPU

ScaleDNN：多 GPU 上的数据移动感知 DNN 训练

• DOI: 10.1109/iccad51958.2021.9643503
• 发表时间: 2021
• 期刊: 2021 IEEE/ACM International Conference On Computer Aided Design (ICCAD
• 作者: Xu, Weizheng;Pattnaik, Ashutosh;Yuan, Geng;Wang, Yanzhi;Zhang, Youtao;Tang, Xulong
• 通讯作者: Tang, Xulong

DIR: Dynamic Request Interleaving for Improving the Read Performance of Aged SSDs

• DOI: 10.1109/nvmsa.2019.8863520
• 发表时间: 2019-08
• 期刊: 2019 IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA)
• 作者: Shiqiang Nie;Youtao Zhang;Weiguo Wu;Chi Zhang;Jun Yang

PageCmp: Bandwidth Efficient Page Deduplication through In-memory Page Comparison

PageCmp：通过内存中页面比较实现带宽高效的页面重复数据删除

• DOI: 10.1109/isvlsi.2019.00023
• 发表时间: 2019
• 期刊: 2019 IEEE Computer Society Annual Symposium on VLSI
• 作者: Raoufi, Mehrnoosh;Deng, Quan;Zhang, Youtao;Yang, Jun
• 通讯作者: Yang, Jun

Parallel all the time: Plane Level Parallelism Exploration for High Performance SSDs

• DOI: 10.1109/msst.2019.000-5
• 发表时间: 2019-05
• 期刊: 2019 35th Symposium on Mass Storage Systems and Technologies (MSST)
• 作者: Congming Gao;Liang Shi;C. Xue;Cheng Ji;Jun Yang;Youtao Zhang

Improving Address Translation in Multi-GPUs via Sharing and Spilling aware TLB Design

• DOI: 10.1145/3466752.3480083
• 发表时间: 2021-10
• 期刊: MICRO-54: 54th Annual IEEE/ACM International Symposium on Microarchitecture
• 作者: Bingyao Li;Jieming Yin;Youtao Zhang;Xulong Tang