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Synthesis of New Precursors for Vapor Deposition

新型气相沉积前驱体的合成

基本信息

批准号：
1764338
负责人：
Roy Gordon
金额：
$ 34.08万
依托单位：
Harvard University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2018
资助国家：
美国
起止时间：
2018-07-01 至 2022-06-30
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1764338&HistoricalAwards=false
关键词：
Synthesis New Precursors Vapor Deposition

项目摘要

The Chemical Synthesis Program of the Chemistry Division supports the project led by Professor Roy Gordon. Professor Gordon is a faculty member in the Department of Chemistry at Harvard University. In this project, he is discovering new compounds that contain important metals for the fabrication of faster and more energy-efficient computers and enable the transmission of electrical energy over longer distances, as required for using more clean and renewable energy sources such as solar, wind, and hydro power. The goal is to make the new compounds so that they are suitable for depositing the metals onto heated surfaces so that they can then be used in the construction of new devices. At the current time, none of the known compounds that contain these metals have the properties needed for this effort. The project employs techniques from organic, inorganic, and materials chemistry. Professor Gordon trains a wide range of students, including those from groups currently underrepresented in science, and he participates in a range of outreach activities that include the design of new exhibits at the Boston Museum of Science.This project is synthesizing novel divalent and trivalent metals of groups 4, 5, and 6 supported by amidinate, guanidinate, and cyclopentadienyl ligands. Initial targets are relatives of known Ti(III) and V(III) amidinates, followed by more ambitious targets, including compounds of Ti(II), Zr(III), Hf(III), Nb(II), Nb(III), and Mo(III). The fundamental knowledge gained in the project may help to solve important technological problems, including deposition of smaller interconnects for computers, and making superconducting wires for the long-distance transmission of electricity. Particularly important targets are Ti(II) compounds, for which no examples are known with the desired combination of properties: volatility, thermal stability, and high reactivity. The chosen ligands combine steric and electronic properties expected to stabilize highly reactive Ti(II) compounds. Similar strategies are being explored for Zr, Hf, V, Nb and Mo, for which only a few compounds even come close to combining all of these desired properties. The project also provides technical input toward the design of new museum exhibits on sustainability, energy conservation, and renewable energy.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

化学系的化学合成计划支持罗伊·戈登教授领导的项目。戈登教授是哈佛大学化学系的教员。在这个项目中，他发现了含有重要金属的新化合物，用于制造更快，更节能的计算机，并能够在更长的距离上传输电能，以使用更清洁和可再生的能源，如太阳能，风能和水力发电。我们的目标是制造新的化合物，使它们适合将金属沉积到加热的表面上，以便它们可以用于构建新设备。目前，含有这些金属的已知化合物都不具有这种努力所需的特性。该项目采用有机，无机和材料化学技术。戈登教授培养了各种各样的学生，包括那些来自目前在科学界代表性不足的群体的学生，他参加了一系列的推广活动，包括在波士顿科学博物馆设计新的展品。这个项目是合成新颖的二价和三价金属的第4，5，和6族由脒基，胍基，配体支持。最初的目标是已知的Ti（III）和V（III）脒基化合物的亲戚，随后是更雄心勃勃的目标，包括Ti（II）、Zr（III）、Hf（III）、Nb（II）、Nb（III）和Mo（III）的化合物。在该项目中获得的基础知识可能有助于解决重要的技术问题，包括为计算机沉积较小的互连，以及为长距离输电制造超导导线。特别重要的目标是Ti（II）化合物，其没有已知的具有期望的特性组合的实例：挥发性、热稳定性和高反应性。所选择的配体结合了联合收割机的空间和电子性能，预期稳定高活性的Ti（II）化合物。对于Zr、Hf、V、Nb和Mo，正在探索类似的策略，对于这些化合物，只有少数化合物甚至接近于结合所有这些期望的性质。该项目还为可持续性、节能和可再生能源方面的新博物馆展品的设计提供技术投入。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

期刊论文数量（6）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Epitaxial growth of Mg x Ca 1−x O on 4H–SiC(0001) and β-Ga 2 O 3 wide band gap semiconductors with atomic layer deposition

采用原子层沉积在 4H-SiC(0001) 和 β-Ga 2 O 3 宽带隙半导体上外延生长 Mg x Ca 1-x O

DOI：
10.1557/jmr.2019.376
发表时间：
2020
期刊：
Journal of Materials Research
影响因子：
2.7
作者：
Lou, Xiabing;Gong, Xian;Kim, Sang Bok;Gordon, Roy G.
通讯作者：
Gordon, Roy G.

Chemical Vapor Deposition of Transparent, p-Type Cuprous Bromide Thin Films

DOI：
10.1021/acs.chemmater.0c04586
发表时间：
2021-02-09
期刊：
CHEMISTRY OF MATERIALS
影响因子：
8.6
作者：
Chang, Christina M.;Davis, Luke M.;Gordon, Roy G.
通讯作者：
Gordon, Roy G.

Study of the crystal structure of SnS thin films by atomic layer deposition

原子层沉积SnS薄膜晶体结构研究

DOI：
10.1063/5.0032782
发表时间：
2021
期刊：
AIP Advances
影响因子：
1.6
作者：
Zhao, Xizhu;Davis, Luke M.;Lou, Xiabing;Kim, Sang Bok;Uličná, Soňa;Jayaraman, Ashwin;Yang, Chuanxi;Schelhas, Laura T.;Gordon, Roy
通讯作者：
Gordon, Roy

ALD Growth of MgxCa1–xO on GaN and Its Band Offset Analysis

GaN 上 MgxCa1-xO 的 ALD 生长及其能带偏移分析