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Synthesis of New Precursors for Vapor Deposition

Synthesis of New Precursors for Vapor Deposition
新型气相沉积前驱体的合成
批准号:
1764338
负责人:
Roy Gordon
金额:
$34.08万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2018
资助国家:
美国
项目状态:
已结题
起止时间:
2018-07-01 至 2022-06-30

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中文摘要
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英文摘要
The Chemical Synthesis Program of the Chemistry Division supports the project led by Professor Roy Gordon. Professor Gordon is a faculty member in the Department of Chemistry at Harvard University. In this project, he is discovering new compounds that contain important metals for the fabrication of faster and more energy-efficient computers and enable the transmission of electrical energy over longer distances, as required for using more clean and renewable energy sources such as solar, wind, and hydro power. The goal is to make the new compounds so that they are suitable for depositing the metals onto heated surfaces so that they can then be used in the construction of new devices. At the current time, none of the known compounds that contain these metals have the properties needed for this effort. The project employs techniques from organic, inorganic, and materials chemistry. Professor Gordon trains a wide range of students, including those from groups currently underrepresented in science, and he participates in a range of outreach activities that include the design of new exhibits at the Boston Museum of Science.This project is synthesizing novel divalent and trivalent metals of groups 4, 5, and 6 supported by amidinate, guanidinate, and cyclopentadienyl ligands. Initial targets are relatives of known Ti(III) and V(III) amidinates, followed by more ambitious targets, including compounds of Ti(II), Zr(III), Hf(III), Nb(II), Nb(III), and Mo(III). The fundamental knowledge gained in the project may help to solve important technological problems, including deposition of smaller interconnects for computers, and making superconducting wires for the long-distance transmission of electricity. Particularly important targets are Ti(II) compounds, for which no examples are known with the desired combination of properties: volatility, thermal stability, and high reactivity. The chosen ligands combine steric and electronic properties expected to stabilize highly reactive Ti(II) compounds. Similar strategies are being explored for Zr, Hf, V, Nb and Mo, for which only a few compounds even come close to combining all of these desired properties. The project also provides technical input toward the design of new museum exhibits on sustainability, energy conservation, and renewable energy.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(6)
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会议论文
Epitaxial growth of Mg x Ca 1−x O on 4H–SiC(0001) and β-Ga 2 O 3 wide band gap semiconductors with atomic layer deposition
采用原子层沉积在 4H-SiC(0001) 和 β-Ga 2 O 3 宽带隙半导体上外延生长 Mg x Ca 1-x O
DOI: 10.1557/jmr.2019.376
发表时间: 2020
期刊: Journal of Materials Research
影响因子: 2.7
作者: [Lou, Xiabing, Gong, Xian, Kim, Sang Bok, Gordon, Roy G.]
通讯作者: Gordon, Roy G.
DOI: 10.1021/acs.chemmater.0c04586
发表时间: 2021-02-09
期刊: CHEMISTRY OF MATERIALS
影响因子: 8.6
作者: [Chang, Christina M., Davis, Luke M., Gordon, Roy G.]
通讯作者: Gordon, Roy G.
DOI: 10.1063/5.0032782
发表时间: 2021
期刊: AIP Advances
影响因子: 1.6
作者: [Zhao, Xizhu, Davis, Luke M., Lou, Xiabing, Kim, Sang Bok, Uličná, Soňa, Jayaraman, Ashwin, Yang, Chuanxi, Schelhas, Laura T., Gordon, Roy]
通讯作者: Gordon, Roy
ALD Growth of MgxCa1–xO on GaN and Its Band Offset Analysis
GaN 上 MgxCa1-xO 的 ALD 生长及其能带偏移分析
DOI: 10.1021/acsaelm.0c00977
发表时间: 2021
期刊: ACS applied electronic materials
影响因子: 4.7
作者: [Gong, Xian, Lou, Xiabing, King, Sam Bok, Gordon, Roy. G.]
通讯作者: Gordon, Roy. G.
Solar Cells From Earth-Abundant Materials
  • 批准号:
    1032955
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    2010
  • 负责人:
    Roy Gordon
  • 依托单位:
NEW PRECURSORS FOR ATOMIC LAYER DEPOSITION OF METALS
  • 批准号:
    0354213
  • 项目类别:
    Standard Grant
  • 资助金额:
    $18.0万
  • 财政年份:
    2004
  • 负责人:
    Roy Gordon
  • 依托单位:
Conformal Deposition of Dielectric Nanolaminates
  • 批准号:
    0236584
  • 项目类别:
    Standard Grant
  • 资助金额:
    $43.56万
  • 财政年份:
    2003
  • 负责人:
    Roy Gordon
  • 依托单位:
Chemical Vapor Deposition of Diffusion Barriers for Microelectronics
  • 批准号:
    9975504
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $25.0万
  • 财政年份:
    1999
  • 负责人:
    Roy Gordon
  • 依托单位:
海外基金