NEW PRECURSORS FOR ATOMIC LAYER DEPOSITION OF METALS

用于金属原子层沉积的新前体

• 批准号: 0354213
• 负责人: Roy Gordon
• 金额: $ 18万
• 依托单位: Harvard University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-04-15 至 2007-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0354213&HistoricalAwards=false
• 关键词: NEW; PRECURSORS; ATOMIC; LAYER; DEPOSITION

Intellectual MeritAtomic layer deposition (ALD) is a method for constructing thin layers of materials atom by atom, providing exquisitely detailed control over the nano-structure and composition of the layers. In ALD, two reactant vapors are supplied alternately to a surface on which they react to form thin layers. Films with highly uniform thickness and composition and sharp interfaces can be deposited over large areas and even within very narrow holes. However, ALD processes are known for only a few metals. We propose to discover and develop ALD precursors and processes for depositing many metals, including chromium, manganese, tantalum, iron, ruthenium, cobalt, nickel, copper and silver, for which no ALD processes are known. These new precursors will also be tested for ALD of metal compounds of interest in semiconductor microelectronics, such as lanthanum oxide, praseodymium oxide, titanium nitride and tantalum nitride.Broader ImpactALD of metals may form the basis for future devices for both the processing and the storage of information. ALD of copper, cobalt and tantalum films may become a key to further miniaturization of copper wires on semiconductor chips. Metal nitrides are needed as conformal diffusion barriers and as conformal contacts in capacitors containing metal oxides with high dielectric constants. Future magnetic data storage may be integrated with the silicon semiconductor chips that process this data. The proposed research should help to supply the scientific base for the realization of these hopes, as well as providing relevant training for undergraduates, graduate students and post-doctoral fellows.

原子层沉积（ALD）是一种通过原子构建材料薄层的方法，可对层的纳米结构和成分进行精细的控制。在ALD中，两种反应物蒸气交替地供应到表面，在所述表面上它们反应以形成薄层。 具有高度均匀的厚度和组成以及尖锐界面的膜可以沉积在大面积上，甚至在非常窄的孔内。然而，ALD工艺已知仅用于少数金属。我们提出发现和开发ALD前体和用于沉积许多金属的工艺，所述金属包括铬、锰、钽、铁、钌、钴、镍、铜和银，对于这些金属，ALD工艺是未知的。这些新的前体也将用于半导体微电子学中感兴趣的金属化合物的ALD测试，例如氧化镧，氧化镨，氮化钛和氮化钽。更广泛的金属影响ALD可能成为未来信息处理和存储设备的基础。 铜、钴和钽膜的ALD可能成为半导体芯片上铜线进一步小型化的关键。需要金属氮化物作为共形扩散阻挡层和作为包含具有高介电常数的金属氧化物的电容器中的共形接触。未来的磁性数据存储可能会与处理这些数据的硅半导体芯片集成在一起。本研究将为实现这些希望提供科学依据，并为本科生、研究生和博士后研究员提供相关培训。