RUI: Atomically flat 3D metal-2D layered semiconductor devices for electronic and optoelectronic applications

RUI：用于电子和光电应用的原子级平面 3D 金属-2D 分层半导体器件

• 批准号: 2151971
• 负责人: Huizhong Xu
• 金额: $ 32.91万
• 依托单位: San Francisco State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-08-01 至 2025-07-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2151971&HistoricalAwards=false
• 关键词: RUI; Atomically; flat; 3D; metal

RUI: Atomically flat 3D metal-2D layered semiconductor devices for electronic and optoelectronic applicationsThis award is funded in whole or in part under the American Rescue Plan Act of 2021 (Public Law 117-2). This research focuses on developing an ultrasensitive, gigahertz speed photodetector in the ultraviolet (UV) range. Fast-response and high-sensitivity ultraviolet photodetectors are in high demand due to their potential for widespread applications ranging from fire monitoring, biological analysis, environmental sensors, and space exploration to UV radiation detection. Currently, such an efficient and fast semiconductor-based nanoscale photodetector is not available. One fundamental obstacle in developing such a device is to create an ideal contact between a semiconductor and a metallic electrode. Metal surface with almost no roughness (atomically flat surfaces) creates an ideal contact with a 2D semiconductor. This research will study devices based on atomically thin 2D semiconductors-atomically flat metal contacts to understand the basic optoelectronic properties and to utilize them for applications in the UV region and ultimately for the development of a new ultrafast, fast-response, and high-sensitivity UV photodetector. This research is expected to have significant technological impacts ranging from everyday life to new communication tools. It will be conducted at a Primarily Undergraduate Institution and will involve undergraduate and Master's students, and students from local high schools. The active participation of students from underrepresented groups in the project will provide a cutting-edge nanoscience research experience for underrepresented groups and an outstanding opportunity to train in nanoscale optoelectronics preparing students for careers in industry and academia. Atomically thin van der Waals crystals demonstrate remarkable electronic, optical, and optoelectrical properties. The project will study devices made of monolayer transition metal dichalcogenides (TMDs) electrically connected with atomically flat Au surface and investigate the optoelectronic properties to advance the fundamental understanding to develop a nanoscale solid-state UV photodetector. The conventional metal evaporation and deposition to create a metal-2D semiconductor junction causes inevitable chemical disorder and Fermi-level pinning at the semiconductor-metal junctions. In this project, a newly developed fabrication technique will be employed to make ideal 2D semiconductor and atomically flat Au (AFAu) planes. Three different types of nanoscale devices will be extensively studied; (i) metal-insulator-metal Schottky diodes, (ii) metal-insulator (hexagonal boron nitride(hBN))-semiconductor-insulator-metal single quantum well devices, and (iii) metal-semiconductor-metal photodetector derived from atomically thin monolayer TMDs sandwiched between two atomically flat metal planes. The objectives of the proposal are to study: (i) electronic transport of atomically thin AFAu/hBN/AFAu Schottky heterojunction diodes, (ii) electronic transport of single quantum well made of AFAu/hBN/TMDs/hBN/AFAu, (iii) realizing ultrasensitive optoelectronics devices based on TMD semiconductors with atomically flat metal electrodes. This research will elucidate the electronic transport across an ideal disorder-free and Fermi level pinning-free metal-semiconductor interface. Furthermore, this research on the ideal metal-semiconductor interface may revolutionize the field of nanoelectronics and nanophotonics, not only in 2D systems but also in other nanoscale systems ranging from energy harvesting to excitonic transistors.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

- 我知道用于电子和光电应用的原子平面3D金属-2D分层半导体器件该奖项全部或部分根据2021年美国救援计划法案（公法117-2）资助。这项研究的重点是开发一种超灵敏，千兆赫速度的紫外（UV）范围内的光电探测器。快速响应和高灵敏度的紫外光探测器因其在火灾监测、生物分析、环境传感器、太空探索和紫外辐射探测等广泛应用中的潜力而受到广泛关注。目前，这种有效且快速的基于光电倍增管的纳米级光电探测器是不可用的。开发这种器件的一个基本障碍是在半导体和金属电极之间产生理想的接触。几乎没有粗糙度的金属表面（原子级平坦表面）与2D半导体形成理想的接触。本研究将研究基于原子薄二维半导体原子平面金属接触的器件，以了解基本的光电特性，并将其用于紫外线区域的应用，并最终开发一种新的超快，快速响应和高灵敏度的紫外线光电探测器。这项研究预计将产生重大的技术影响，从日常生活到新的通信工具。它将在一所私立本科院校进行，将涉及本科生和硕士生，以及当地高中的学生。来自代表性不足的群体的学生积极参与该项目将为代表性不足的群体提供尖端的纳米科学研究经验，并为学生在工业和学术界的职业生涯做好准备。原子级薄的货车范德瓦耳斯晶体表现出显著的电子、光学和光电性质。该项目将研究由单层过渡金属二硫属化物（TMD）与原子级平坦Au表面电连接制成的器件，并研究其光电特性，以推进对开发纳米级固态紫外光探测器的基本理解。传统的金属蒸发和沉积以产生金属-2D半导体结，导致在半导体-金属结处不可避免的化学无序和费米能级钉扎。在本计画中，我们将利用一种新的制程技术来制作理想的二维半导体与原子级平坦的Au（AFAu）平面。三种不同类型的纳米器件将被广泛研究：（i）金属-绝缘体-金属肖特基二极管，（ii）金属-绝缘体（六方氮化硼（hBN））-半导体-绝缘体-金属单量子阱器件，以及（iii）金属-半导体-金属光电探测器，其来源于夹在两个原子级平坦金属平面之间的原子级薄单层TMD。该提案的目标是研究：（i）原子级薄AFAu/hBN/AFAu肖特基异质结二极管的电子输运，（ii）由AFAu/hBN/TMD/hBN/AFAu制成的单量子阱的电子输运，（iii）实现基于TMD半导体与原子级平坦金属电极的超灵敏光电子器件。本研究将阐明理想无无序、无费米能级钉扎的金属-半导体界面的电子输运。此外，这项关于理想的金属-半导体界面的研究可能会给纳米电子学和纳米光子学领域带来革命性的变化，不仅在2D系统中，而且在从能量收集到激子晶体管的其他纳米级系统中也是如此。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Semimetal–Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer‐Scale Broadband Photonics

• DOI: 10.1002/adpr.202300029
• 发表时间: 2023-01
• 期刊: Advanced Photonics Research
• 作者: Hon-Loen Sinn;Aravindh Kumar;E. Pop;A. Newaz