PFI-TT: Acousto-Electric Semiconductor Amplifiers to Expand Wireless Connectivity to a Larger Population of End-Users

PFI-TT:声电半导体放大器将无线连接扩展到更多的最终用户

基本信息

项目摘要

The broader impact/commercial potential of this Partnerships for Innovation - Technology Translation (PFI-TT) project is in empowering a more affordable expansion of wireless connectivity for a larger population of end-users. This project investigates the interaction of acoustic phonons and charge carriers in a hybrid piezoelectric-semiconductor slab and could inspire a variety of discoveries and innovations in related disciplines. The project is expected to provide an invaluable entrepreneurial training opportunity for a new generation of early-career engineers including, but not limited to, the students supported by this project. The resources available through this project will also directly impact the team's ongoing involvement in undergraduate/minority mentoring programs by creating opportunities to include student communities in a technology commercialization process from the early stages of concept development and market evaluation. The proposed project aims to substantially enhance the performance of acousto-electric lithium niobate-semiconductor amplifiers and to evaluate the commercial potential of such devices in the wireless transceiver market. The targeted micro-scale non-reciprocal filter/amplifier may significantly assist Ratio Frequency (RF) designers and manufacturers by enabling full-duplex communication and relaxing the requirement on the front-end acoustic filters. Such non-reciprocal RF components have substantial merits over alternative devices, including: ease of scalability to higher frequencies compared to the competing surface acoustic wave-based devices; feasibility of fabricating dispersed-frequency devices on a single chip in contrast to bulk thickness-mode devices; feasibility of continuous-wave operation due to the excellent thermal conductivity and elastic linearity of the semiconducting substrate (e.g. silicon); and fabrication of small form factors on a silicon substrate which makes the device a candidate for integration with other RF components that are currently included in the current RF front-end modules.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
这种伙伴关系对创新 - 技术翻译(PFI-TT)项目的更广泛的影响/商业潜力在于,为更大的最终用户人群增强了无线连接的更实惠的扩展。该项目调查了混合压电 - 副导体平板中声音子和电荷载体的相互作用,并可能激发相关学科中的各种发现和创新。 预计该项目将为新一代的早期职业工程师提供宝贵的企业家培训机会,包括但不限于该项目支持的学生。 通过该项目可用的资源还将直接影响团队通过从概念开发和市场评估的早期阶段将学生社区纳入技术商业化过程的机会,从而影响团队持续参与本科/少数民族指导计划。 拟议的项目旨在实质上增强声音二甲硅锂 - 肺导能器放大器的性能,并评估无线收发器市场中此类设备的商业潜力。 有针对性的微尺度的非重点过滤器/放大器可以通过启用全双工通信并放松前端声学过滤器的要求来显着帮助比率频率(RF)设计师和制造商。此类非核RF组件在替代设备上具有很高的优点,包括:与竞争性表面声波的设备相比,易于较高频率的可扩展性;与块状厚度模式设备相比,在单个芯片上制造分散频率设备的可行性; 由于半导体底物的出色导热率和弹性线性性引起的连续波运行的可行性(例如硅);并在硅基板上制造小型形式,这使该设备成为与当前RF前端模块中当前包含的其他RF组件集成的候选者。该奖项反映了NSF的法定任务,并被认为是值得通过基金会的知识分子和更广泛影响的审查审查标准来通过评估来通过评估来获得支持的。

项目成果

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Reza Abdolvand其他文献

Fracture limit in thin-film piezoelectric-on-substrate resonators: Silicon VS. diamond
薄膜压电基片谐振器的断裂极限:硅 VS。
Piezoelectric Micromachined Ultrasonic Transducer Integrated With Field Effect Transistor for Acoustic Sensing
与场效应晶体管集成的压电微机械超声波换能器,用于声学传感
TEMPERATURE-STABLE THIN-FILM LITHIUM TANTALITE-ON-SILICON RESONATORS
温度稳定的薄膜硅基钽铁矿锂谐振器
Passive In-Band RF Power Sensing in Thin-Film Lithium Niobate on Silicon Platform
硅平台上薄膜铌酸锂的无源带内射频功率传感
Through-support-coupled micromechanical filter array
贯通支撑耦合微机械滤波器阵列

Reza Abdolvand的其他文献

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{{ truncateString('Reza Abdolvand', 18)}}的其他基金

Acoustoelectric Amplification in Composite Piezoelectric-Silicon Cavities: A Circuit-Less Amplification Paradigm for RF Signal Processing and Wireless Sensing
复合压电硅腔中的声电放大:用于射频信号处理和无线传感的无电路放大范例
  • 批准号:
    1810143
  • 财政年份:
    2018
  • 资助金额:
    $ 24.96万
  • 项目类别:
    Standard Grant
Integrating High Frequency Whispering-Gallery-Mode Phononic Cavities with Efficient Electrically-Small Antennas: Pushing the Limits of Wireless Passive Micro-Sensing
将高频耳语廊模式声子腔与高效电小天线集成:突破无线无源微传感的极限
  • 批准号:
    1711632
  • 财政年份:
    2017
  • 资助金额:
    $ 24.96万
  • 项目类别:
    Standard Grant
EAGER: Investigation and Optimization of Thermoelectric Properties of Highly-Doped Polysilicon Nanowires
EAGER:高掺杂多晶硅纳米线热电性能的研究和优化
  • 批准号:
    1418704
  • 财政年份:
    2014
  • 资助金额:
    $ 24.96万
  • 项目类别:
    Standard Grant
GOALI: Lateral-Mode MEMS Filter Arrays on Ultrananocrystalline Diamond for Multi-Band Communication
GOALI:用于多频段通信的超纳米晶金刚石横向模式 MEMS 滤波器阵列
  • 批准号:
    1440163
  • 财政年份:
    2014
  • 资助金额:
    $ 24.96万
  • 项目类别:
    Standard Grant
EAGER: Investigation and Optimization of Thermoelectric Properties of Highly-Doped Polysilicon Nanowires
EAGER:高掺杂多晶硅纳米线热电性能的研究和优化
  • 批准号:
    1355488
  • 财政年份:
    2013
  • 资助金额:
    $ 24.96万
  • 项目类别:
    Standard Grant
GOALI: Lateral-Mode MEMS Filter Arrays on Ultrananocrystalline Diamond for Multi-Band Communication
GOALI:用于多频段通信的超纳米晶金刚石横向模式 MEMS 滤波器阵列
  • 批准号:
    1202523
  • 财政年份:
    2012
  • 资助金额:
    $ 24.96万
  • 项目类别:
    Standard Grant

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