PFI-TT: Acousto-Electric Semiconductor Amplifiers to Expand Wireless Connectivity to a Larger Population of End-Users

PFI-TT：声电半导体放大器将无线连接扩展到更多的最终用户

• 批准号: 2122670
• 负责人: Reza Abdolvand
• 金额: $ 24.96万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-08-01 至 2024-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2122670&HistoricalAwards=false
• 关键词: PFI; TT; Acousto; Electric; Semiconductor

The broader impact/commercial potential of this Partnerships for Innovation - Technology Translation (PFI-TT) project is in empowering a more affordable expansion of wireless connectivity for a larger population of end-users. This project investigates the interaction of acoustic phonons and charge carriers in a hybrid piezoelectric-semiconductor slab and could inspire a variety of discoveries and innovations in related disciplines. The project is expected to provide an invaluable entrepreneurial training opportunity for a new generation of early-career engineers including, but not limited to, the students supported by this project. The resources available through this project will also directly impact the team's ongoing involvement in undergraduate/minority mentoring programs by creating opportunities to include student communities in a technology commercialization process from the early stages of concept development and market evaluation. The proposed project aims to substantially enhance the performance of acousto-electric lithium niobate-semiconductor amplifiers and to evaluate the commercial potential of such devices in the wireless transceiver market. The targeted micro-scale non-reciprocal filter/amplifier may significantly assist Ratio Frequency (RF) designers and manufacturers by enabling full-duplex communication and relaxing the requirement on the front-end acoustic filters. Such non-reciprocal RF components have substantial merits over alternative devices, including: ease of scalability to higher frequencies compared to the competing surface acoustic wave-based devices; feasibility of fabricating dispersed-frequency devices on a single chip in contrast to bulk thickness-mode devices; feasibility of continuous-wave operation due to the excellent thermal conductivity and elastic linearity of the semiconducting substrate (e.g. silicon); and fabrication of small form factors on a silicon substrate which makes the device a candidate for integration with other RF components that are currently included in the current RF front-end modules.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该创新合作伙伴关系-技术转化（PFI-TT）项目更广泛的影响/商业潜力在于为更多最终用户提供更经济实惠的无线连接扩展。该项目研究了混合压电半导体板中声学声子和电荷载流子的相互作用，并可能激发相关学科的各种发现和创新。 该项目预计将为新一代的早期职业工程师提供宝贵的创业培训机会，包括但不限于该项目支持的学生。 通过该项目提供的资源也将直接影响团队对本科生/少数民族辅导计划的持续参与，创造机会，将学生社区纳入概念开发和市场评估的早期阶段的技术商业化过程。 拟议项目旨在大幅提高声电锂半导体放大器的性能，并评估此类器件在无线收发器市场的商业潜力。 目标微尺度非互易滤波器/放大器可以通过实现全双工通信和放松对前端声学滤波器的要求来显著地帮助比频率（RF）设计者和制造商。这种非互易RF部件相对于替代器件具有实质性的优点，包括：与竞争的基于表面声波的器件相比，易于扩展到更高的频率;与体厚度模式器件相比，在单个芯片上制造分散频率器件的可行性;由于半导体衬底的优良导热性和弹性线性，该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。