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Metal-insulator Transitions in 2D and 3D Refractory Nitrides

Metal-insulator Transitions in 2D and 3D Refractory Nitrides
2D 和 3D 难熔氮化物中的金属-绝缘体转变
批准号:
1712752
负责人:
Daniel Gall
金额:
$45.67万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-06-01 至 2022-05-31

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英文摘要
This project is co-funded by two Division of Materials Research programs: (i) Ceramics, and (ii) Electronic and Photonic Materials.NON-TECHNICAL DESCRIPTION: This project studies new materials which are expected to combine two key properties: high-temperature stability and electrically semiconducting. The combination of these properties is very promising for various applications, including, for example, devices that convert waste-heat from automobile engines to electricity, low-power devices for mobile applications which dramatically increase the time between battery recharging cycles, and high-speed switching and filtering devices for mobile communication with enhanced data bandwidth. In this research, two specific materials are synthesized by combining the required atoms in a vacuum deposition process. Both of these materials have never been synthesized before, but have been theoretically predicted to exhibit desired electronic properties that may lead to the aforementioned applications. The project determines the process for making these new materials and experimentally quantifies the relevant materials properties to determine their potential applications. Students are trained for careers in the semiconductor and defense industries.TECHNICAL DETAILS: This research project studies metal-insulator transitions in unexplored transition-metal nitrides. It is motivated by two recent theoretical predictions: (i) TiMgN2 exhibits a stable ordered phase with a 1.1 eV bandgap and (ii) insulating CrN forms a 2D electron gas for layers of ~4 nm thickness. The project employs epitaxial thin film growth, electron transport measurements, and optical characterization techniques to confirm these predictions and study the composition and quantum-confinement space for the metal-insulator transitions. The two material systems are used as starting points to develop nitrides including ternaries and interface materials with promising opto- and thermo-electric properties. This project has the potential to create a new research field of "semiconducting transition-metal nitrides" with potential for transformative impact on the coatings industry by providing a range of new applications for transition-metal nitrides, ranging from refractory semiconductors for extreme environments to high-temperature thermoelectric and optoelectronic materials to new piezoelectric and spintronic thin films. Graduate and undergraduate students as well as high-school interns are trained on thin film deposition and electronic characterization methods which are very important in the coating and semiconductor industries.
期刊论文(37)
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会议论文
DOI: 10.1016/j.actamat.2018.07.074
发表时间: 2018-10-15
期刊: ACTA MATERIALIA
影响因子: 9.4
作者: [Balasubramanian, Karthik, Khare, Sanjay, V, Gall, Daniel]
通讯作者: Gall, Daniel
DOI: 10.1063/1.5091034
发表时间: 2019-04
期刊: Applied Physics Letters
影响因子: 4
作者: [Mary E. McGahay;D. Gall]
通讯作者: Mary E. McGahay;D. Gall
Metal-insulator transitions in epitaxial rocksalt-structure Cr1−x/2N1−xOx (001)
外延岩盐结构 Cr1−x/2N1−xOx (001) 中的金属-绝缘体转变
DOI: 10.1103/physrevb.102.235102
发表时间: 2020
期刊: Physical Review B
影响因子: 3.7
作者: [McGahay, Mary E., Khare, Sanjay V., Gall, Daniel]
通讯作者: Gall, Daniel
Near-Zero Negative Real Permittivity in Far Ultraviolet: Extending Plasmonics and Photonics with B1-MoN x
远紫外线中近零负实介电常数:用 B1-MoN x 扩展等离激元学和光子学
DOI: 10.1021/acs.jpcc.9b04141
发表时间: 2019
期刊: The Journal of Physical Chemistry C
影响因子: --
作者: [Kassavetis, Spyros, Ozsdolay, Brian D., Kalfagiannis, Nikolaos, Habib, Adela, Tortai, Jean-Hervé, Kerdsongpanya, Sit, Sundararaman, Ravishankar, Stchakovsky, Michel, Bellas, Dimitris V., Gall, Daniel]
通讯作者: Gall, Daniel
28
    Collaborative Research: FuSe: Interconnects with Co-Designed Materials, Topology, and Wire Architecture
    • 批准号:
      2328906
    • 项目类别:
      Continuing Grant
    • 资助金额:
      $118.6万
    • 财政年份:
      2023
    • 负责人:
      Daniel Gall
    • 依托单位:
    E2CDA: Type I: Collaborative Research: Interconnects Beyond Cu
    • 批准号:
      1740271
    • 项目类别:
      Continuing Grant
    • 资助金额:
      $8.0万
    • 财政年份:
      2017
    • 负责人:
      Daniel Gall
    • 依托单位:
    DMREF/Collaborative Research: Nitride Discovery - Creating the Knowledge Base for Hard Coating Synthesis
    • 批准号:
      1629230
    • 项目类别:
      Standard Grant
    • 资助金额:
      $42.97万
    • 财政年份:
      2016
    • 负责人:
      Daniel Gall
    • 依托单位:
    Hard Coatings: Toughness Enhancement through Responsive Phase Change
    • 批准号:
      1537984
    • 项目类别:
      Standard Grant
    • 资助金额:
      $32.53万
    • 财政年份:
      2015
    • 负责人:
      Daniel Gall
    • 依托单位:
    国内基金
    海外基金
    拓扑绝缘体中的强关联现象
    • 批准号:
      11047126
    • 项目类别:
      专项基金项目
    • 资助金额:
      4.0万元
    • 批准年份:
      2010
    • 负责人:
      封晓勇
    • 依托单位:
    基于有源微环谐振器的高速光学比特存储的机理与器件研究
    • 批准号:
      61006045
    • 项目类别:
      青年科学基金项目
    • 资助金额:
      23.0万元
    • 批准年份:
      2010
    • 负责人:
      黄庆忠
    • 依托单位: