Metal-insulator Transitions in 2D and 3D Refractory Nitrides

2D 和 3D 难熔氮化物中的金属-绝缘体转变

基本信息

  • 批准号:
    1712752
  • 负责人:
  • 金额:
    $ 45.67万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2017
  • 资助国家:
    美国
  • 起止时间:
    2017-06-01 至 2022-05-31
  • 项目状态:
    已结题

项目摘要

This project is co-funded by two Division of Materials Research programs: (i) Ceramics, and (ii) Electronic and Photonic Materials.NON-TECHNICAL DESCRIPTION: This project studies new materials which are expected to combine two key properties: high-temperature stability and electrically semiconducting. The combination of these properties is very promising for various applications, including, for example, devices that convert waste-heat from automobile engines to electricity, low-power devices for mobile applications which dramatically increase the time between battery recharging cycles, and high-speed switching and filtering devices for mobile communication with enhanced data bandwidth. In this research, two specific materials are synthesized by combining the required atoms in a vacuum deposition process. Both of these materials have never been synthesized before, but have been theoretically predicted to exhibit desired electronic properties that may lead to the aforementioned applications. The project determines the process for making these new materials and experimentally quantifies the relevant materials properties to determine their potential applications. Students are trained for careers in the semiconductor and defense industries.TECHNICAL DETAILS: This research project studies metal-insulator transitions in unexplored transition-metal nitrides. It is motivated by two recent theoretical predictions: (i) TiMgN2 exhibits a stable ordered phase with a 1.1 eV bandgap and (ii) insulating CrN forms a 2D electron gas for layers of ~4 nm thickness. The project employs epitaxial thin film growth, electron transport measurements, and optical characterization techniques to confirm these predictions and study the composition and quantum-confinement space for the metal-insulator transitions. The two material systems are used as starting points to develop nitrides including ternaries and interface materials with promising opto- and thermo-electric properties. This project has the potential to create a new research field of "semiconducting transition-metal nitrides" with potential for transformative impact on the coatings industry by providing a range of new applications for transition-metal nitrides, ranging from refractory semiconductors for extreme environments to high-temperature thermoelectric and optoelectronic materials to new piezoelectric and spintronic thin films. Graduate and undergraduate students as well as high-school interns are trained on thin film deposition and electronic characterization methods which are very important in the coating and semiconductor industries.
本项目由材料研究部的两个项目共同资助:(i)陶瓷和(ii)电子与光子材料。非技术描述:该项目研究的新材料有望结合两个关键特性:高温稳定性和电半导体。这些特性的组合对于各种应用非常有前景,包括,例如,将废热从汽车发动机转化为电力的设备,用于移动应用的低功耗设备,大大增加了电池充电周期之间的时间,以及用于具有增强数据带宽的移动通信的高速交换和过滤设备。在本研究中,通过在真空沉积过程中组合所需的原子来合成两种特定的材料。这两种材料以前从未合成过,但理论上预测它们会表现出所需的电子特性,可能会导致上述应用。该项目确定了制造这些新材料的过程,并通过实验量化了相关材料的特性,以确定它们的潜在应用。学生接受半导体和国防工业的职业培训。技术细节:本研究项目研究未开发的过渡金属氮化物中金属绝缘体的转变。这是由两个最近的理论预测驱动的:(i) TiMgN2表现出稳定的有序相,具有1.1 eV的带隙;(ii)绝缘CrN在~ 4nm厚度的层上形成二维电子气体。该项目采用外延薄膜生长、电子输运测量和光学表征技术来证实这些预测,并研究金属-绝缘体转变的组成和量子限制空间。这两种材料体系被用作开发氮化物的起点,包括三元化合物和具有良好光电和热电性能的界面材料。该项目有可能创造一个新的研究领域“半导体过渡金属氮化物”,通过为过渡金属氮化物提供一系列新的应用,从极端环境的耐火半导体到高温热电和光电子材料,再到新型压电和自旋电子薄膜,对涂料行业产生变革性影响。研究生和本科生以及高中实习生接受薄膜沉积和电子表征方法的培训,这些方法在涂层和半导体工业中非常重要。

项目成果

期刊论文数量(37)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Energetics of point defects in rocksalt structure transition metal nitrides: Thermodynamic reasons for deviations from stoichiometry
  • DOI:
    10.1016/j.actamat.2018.07.074
  • 发表时间:
    2018-10-15
  • 期刊:
  • 影响因子:
    9.4
  • 作者:
    Balasubramanian, Karthik;Khare, Sanjay, V;Gall, Daniel
  • 通讯作者:
    Gall, Daniel
Conductive surface oxide on CrN(001) layers
  • DOI:
    10.1063/1.5091034
  • 发表时间:
    2019-04
  • 期刊:
  • 影响因子:
    4
  • 作者:
    Mary E. McGahay;D. Gall
  • 通讯作者:
    Mary E. McGahay;D. Gall
Metal-insulator transitions in epitaxial rocksalt-structure Cr1−x/2N1−xOx (001)
外延岩盐结构 Cr1−x/2N1−xOx (001) 中的金属-绝缘体转变
  • DOI:
    10.1103/physrevb.102.235102
  • 发表时间:
    2020
  • 期刊:
  • 影响因子:
    3.7
  • 作者:
    McGahay, Mary E.;Khare, Sanjay V.;Gall, Daniel
  • 通讯作者:
    Gall, Daniel
Near-Zero Negative Real Permittivity in Far Ultraviolet: Extending Plasmonics and Photonics with B1-MoN x
远紫外线中近零负实介电常数:用 B1-MoN x 扩展等离激元学和光子学
  • DOI:
    10.1021/acs.jpcc.9b04141
  • 发表时间:
    2019
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Kassavetis, Spyros;Ozsdolay, Brian D.;Kalfagiannis, Nikolaos;Habib, Adela;Tortai, Jean-Hervé;Kerdsongpanya, Sit;Sundararaman, Ravishankar;Stchakovsky, Michel;Bellas, Dimitris V.;Gall, Daniel
  • 通讯作者:
    Gall, Daniel
The search for the most conductive metal for narrow interconnect lines
  • DOI:
    10.1063/1.5133671
  • 发表时间:
    2020-02-07
  • 期刊:
  • 影响因子:
    3.2
  • 作者:
    Gall, Daniel
  • 通讯作者:
    Gall, Daniel
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Daniel Gall其他文献

NiAl as a Potential Material for Liner- and Barrier-Free Interconnect in Ultrasmall Technology Node
NiAl 作为超小型技术节点中无衬里和无障碍互连的潜在材料
Epitaxial TiCemsubx/sub/em(001) layers: Phase formation and physical properties vs C-to-Ti ratio
  • DOI:
    10.1016/j.actamat.2022.117643
  • 发表时间:
    2022-03-01
  • 期刊:
  • 影响因子:
    9.300
  • 作者:
    Peijiao Fang;C.P. Mulligan;Ru Jia;Jian Shi;S.V. Khare;Daniel Gall
  • 通讯作者:
    Daniel Gall
CuTi as Potential Liner- and Barrier-Free Interconnect Conductor
CuTi 作为潜在的无衬里和无障碍互连导体
An Adaptable Implementation of ACT-R with Refraction in Constraint Handling Rules
约束处理规则中带有折射的 ACT-R 的适应性实现
  • DOI:
  • 发表时间:
    2015
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Daniel Gall
  • 通讯作者:
    Daniel Gall
Mechanical properties of compositionally modulated epitaxial VN(001)/VC(001) films
成分调制外延VN(001)/VC(001)薄膜的力学性能
  • DOI:
    10.1016/j.actamat.2025.121135
  • 发表时间:
    2025-08-01
  • 期刊:
  • 影响因子:
    9.300
  • 作者:
    Moishe Y.E. Azoff-Slifstein;Anshuman Thakral;Sadiq S. Nishat;Md. Rafiqul Islam;Patrick E. Hopkins;Daniel Gall
  • 通讯作者:
    Daniel Gall

Daniel Gall的其他文献

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{{ truncateString('Daniel Gall', 18)}}的其他基金

Collaborative Research: FuSe: Interconnects with Co-Designed Materials, Topology, and Wire Architecture
合作研究:FuSe:与共同设计的材料、拓扑和线路架构互连
  • 批准号:
    2328906
  • 财政年份:
    2023
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Continuing Grant
E2CDA: Type I: Collaborative Research: Interconnects Beyond Cu
E2CDA:I 类:协作研究:铜以外的互连
  • 批准号:
    1740271
  • 财政年份:
    2017
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Continuing Grant
DMREF/Collaborative Research: Nitride Discovery - Creating the Knowledge Base for Hard Coating Synthesis
DMREF/合作研究:氮化物发现 - 创建硬涂层合成知识库
  • 批准号:
    1629230
  • 财政年份:
    2016
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Standard Grant
Hard Coatings: Toughness Enhancement through Responsive Phase Change
硬质涂层:通过响应相变增强韧性
  • 批准号:
    1537984
  • 财政年份:
    2015
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Standard Grant
Nitride Compounds: Property Anomalies Near Structural Instabilities
氮化物:接近结构不稳定的性质异常
  • 批准号:
    1309490
  • 财政年份:
    2013
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Continuing Grant
DMREF/Collaborative Research: Nitride Discovery - Creating the Knowledge Base for Hard Coating Design
DMREF/协作研究:氮化物发现 - 创建硬质涂层设计知识库
  • 批准号:
    1234872
  • 财政年份:
    2012
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Standard Grant
Adaptive High-Temperature Lubrication through Nanopore Channels
通过纳米孔通道进行自适应高温润滑
  • 批准号:
    1031201
  • 财政年份:
    2010
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Standard Grant
Self-Lubricating Nanoporous Hard Coatings
自润滑纳米孔硬质涂层
  • 批准号:
    0653843
  • 财政年份:
    2007
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Standard Grant
CAREER: Nanostructure Growth from the Vapor Phase
职业:气相纳米结构的生长
  • 批准号:
    0645312
  • 财政年份:
    2007
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Continuing Grant
Interlinked Nanorod Coatings
互连纳米棒涂层
  • 批准号:
    0727413
  • 财政年份:
    2007
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Standard Grant

相似国自然基金

拓扑绝缘体中的强关联现象
  • 批准号:
    11047126
  • 批准年份:
    2010
  • 资助金额:
    4.0 万元
  • 项目类别:
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基于有源微环谐振器的高速光学比特存储的机理与器件研究
  • 批准号:
    61006045
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    2010
  • 资助金额:
    23.0 万元
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    青年科学基金项目

相似海外基金

Superconductor-(Metal)-Insulator Transitions: Understanding the Emergence of Metallic States, A Continuation Proposal
超导体-(金属)-绝缘体转变:了解金属态的出现,延续提案
  • 批准号:
    2307132
  • 财政年份:
    2023
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Continuing Grant
Superconducting and Metal-Insulator Transitions in Quasi-Two-Dimensional Strongly Correlated Materials
准二维强关联材料中的超导和金属-绝缘体转变
  • 批准号:
    2104193
  • 财政年份:
    2021
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Continuing Grant
Superconductor-(Metal)-Insulator Transitions: Understanding the Emergence of Anomalous Metallic States
超导体-(金属)-绝缘体转变:了解反常金属态的出现
  • 批准号:
    1808385
  • 财政年份:
    2018
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Continuing Grant
E2CDA: Type II: Collaborative Research: Metal-insulator transitions for low power switching devices
E2CDA:类型 II:协作研究:低功率开关器件的金属绝缘体转换
  • 批准号:
    1740213
  • 财政年份:
    2017
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Continuing Grant
Study of metal-insulator transitions in strongly correlated electron material nanocrystals
强相关电子材料纳米晶中金属-绝缘体转变的研究
  • 批准号:
    17K05501
  • 财政年份:
    2017
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
DMREF: Collaborative Research: Structure Genome of Metal-Insulator Transitions
DMREF:合作研究:金属-绝缘体转变的结构基因组
  • 批准号:
    1729303
  • 财政年份:
    2017
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Standard Grant
E2CDA: Type II: Collaborative Research: Metal-insulator transitions for low power switching devices
E2CDA:类型 II:协作研究:低功率开关器件的金属绝缘体转换
  • 批准号:
    1740119
  • 财政年份:
    2017
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Continuing Grant
Controlling Magnetism, Metal-Insulator Transitions, and Superconductivity in Ruthenate Thin Films
控制钌酸盐薄膜中的磁性、金属-绝缘体转变和超导性
  • 批准号:
    1709255
  • 财政年份:
    2017
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Continuing Grant
DMREF: Collaborative Research: Structure Genome of Metal-Insulator Transitions
DMREF:合作研究:金属-绝缘体转变的结构基因组
  • 批准号:
    1729489
  • 财政年份:
    2017
  • 资助金额:
    $ 45.67万
  • 项目类别:
    Standard Grant
Exploring metal-insulator transitions in ordered, 2-D nanoengineered materials
探索有序二维纳米工程材料中的金属-绝缘体转变
  • 批准号:
    497257-2016
  • 财政年份:
    2016
  • 资助金额:
    $ 45.67万
  • 项目类别:
    University Undergraduate Student Research Awards
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