Nanowire-Heterojunction Bipolar Transistor (NW-HBT)

在该项目的第一阶段，通过III / V npn纳米线芯/壳HBT结构实现了少数输运的第一个证明，测量的电流增益β < 1。在短期内，很有可能改进已经取得的成果。因此，项目拟议扩展阶段的工作应侧重于调查可能直接影响电流增益的参数。在这种情况下，开发的纳米线HBT结构将用于回答有关材料开发的进一步问题。目前实现的n-InGaP / p-GaAs BE-异质二极管在正向和反向特性方面都没有优化的行为。可能的原因是一个高的缺陷密度和表面和边缘的影响壳刻面的主导地位。高BE反向电流是也产生寄生电荷载流子的可能机制的指示器，寄生电荷载流子在晶体管操作期间不能被集电极捕获。拟议的工作计划将集中在机制，可能有助于在晶体管中的寄生基极电流的产生。

Within the first phase of the project, a first proof of minority transport by a III / V npn nanowire core / shell HBT structure with measured current gain β < 1 has been achieved. There is high potential in the short term to improve the results already achieved. For this reason, the work in the proposed extension phase of the project should focus on the investigation of the parameters which may directly influence the current gain. In this case, the developed nanowire HBT structure will be used to answer further questions regarding material development.The currently realized n-InGaP / p-GaAs BE-heterodiode has a not yet optimized behavior in terms of both forward and reverse characteristics. Possible reasons are a high defect density and the dominance of surface and edge effects on shell-facets. The high BE reverse current is an indicatior for a possible mechanism which also generates parasitic charge carriers, which can not be captured by the collector during transistor operation. The proposed work program will focus on the mechanisms that may contribute to the generation of parasitic base current in the transistor.