Nanowire-Heterojunction Bipolar Transistor (NW-HBT)

点击翻译按钮获取中文摘要

Within the first phase of the project, a first proof of minority transport by a III / V npn nanowire core / shell HBT structure with measured current gain β < 1 has been achieved. There is high potential in the short term to improve the results already achieved. For this reason, the work in the proposed extension phase of the project should focus on the investigation of the parameters which may directly influence the current gain. In this case, the developed nanowire HBT structure will be used to answer further questions regarding material development.The currently realized n-InGaP / p-GaAs BE-heterodiode has a not yet optimized behavior in terms of both forward and reverse characteristics. Possible reasons are a high defect density and the dominance of surface and edge effects on shell-facets. The high BE reverse current is an indicatior for a possible mechanism which also generates parasitic charge carriers, which can not be captured by the collector during transistor operation. The proposed work program will focus on the mechanisms that may contribute to the generation of parasitic base current in the transistor.