STTR Phase I: Metalorganic Chemical Vapor Deposition (MOCVD) Growth of GaAs Wafers for Heterojunction Bipolar Transistors with Reduced Burn-In

STTR 第一阶段：用于异质结双极晶体管的 GaAs 晶圆的金属有机化学气相沉积 (MOCVD) 生长，减少老化

• 批准号: 0512723
• 负责人: Eric Rehder
• 金额: --
• 依托单位: Kopin Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-07-01 至 2006-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0512723&HistoricalAwards=false
• 关键词: STTR; Phase; Metalorganic; Chemical; Vapor

This Small Business Technology Transfer (STTR) Phase I research project targets performance of GaAs-based heterojunction bipolar transistors (HBT). The high power and high frequency characteristics of these HBTs have led to their use as the power amplifier for several wireless applications such as cellular phones and wireless local area networks. The gain of a fabricated HBT increases by as much as a factor of four during the first few minutes of device operation, known as burn-in. The gain then continues to drift, which can be either up or down, over the span of tens of hours of operation. The drift in gain requires significant cost and resources in power amplifier design and production. The amplifier circuitry must be able to accommodate these variations in transistor gain requiring a significant performance compromise resulting in additional cost for circuit development and time to market. Individual devices must otherwise go through extensive testing to achieve stable operation. While well known, the burn-in and drift phenomena are poorly understood. Improved film deposition methods are needed to minimize the burn-in and drift. Previous investigations have linked these instabilities to point defects in the base.With power amplifier production at hundreds of millions of units annually extended burn-in testing is expensive and necessary to avoid. If successful the development of low burn in heterojunction bipolar transistors for power amplifiers will be an important manufacturing development since it can ultimately lower the cost of the devices. Since these devices are used primarily in cell phones, for the transmitter, accomplishing a manufacturing methodology for low burn and drift devices would result in a lower cost to the consumer.

这项小型企业技术转移（STTR）第一阶段研究项目的目标是gaas基异质结双极晶体管（HBT）的性能。这些hbt的高功率和高频特性导致它们被用作蜂窝电话和无线局域网等几种无线应用的功率放大器。在器件运行的最初几分钟内，即所谓的老化期间，制造的HBT的增益增加了多达四倍。然后，增益继续漂移，可以是上升或下降，在数十小时的操作跨度。增益漂移在功率放大器的设计和生产中需要大量的成本和资源。放大器电路必须能够适应晶体管增益的这些变化，需要显著的性能妥协，从而导致电路开发的额外成本和上市时间。个别设备必须经过广泛的测试才能稳定运行。虽然众所周知，但对老化和漂移现象却知之甚少。需要改进薄膜沉积方法，以尽量减少磨损和漂移。先前的调查已经将这些不稳定性与基地的点缺陷联系起来。随着功率放大器的年产量达到数亿台，延长的老化测试是昂贵的，也是必须避免的。如果开发成功，用于功率放大器的低烧蚀异质结双极晶体管将是一个重要的制造业发展，因为它最终可以降低器件的成本。由于这些设备主要用于手机，对于发射器，完成低燃烧和漂移设备的制造方法将导致消费者的成本降低。