Rapid solution growth of SiC using 100% Cr solvent
Rapid solution growth of SiC using 100% Cr solvent
批准号:
16K14445
负责人:
Kawanishi Sakiko
金额:
$2.33万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2016
资助国家:
日本
项目状态:
已结题
起止时间:
2016-04-01 至 2018-03-31
中文摘要
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英文摘要
期刊论文(9)
专著(0)
科研奖励(0)
会议论文
Real-time Observation of Solution Growth Interface of SiC Using Alloy Solvent
使用合金溶剂实时观察 SiC 溶液生长界面
DOI:
--
发表时间:
2018
期刊:
影响因子:
--
作者:
[Sakiko Kawanishi, Takeshi Yoshikawa, Kazuki Morita]
通讯作者:
Kazuki Morita
New defect engineering; challenge for zero twin defect 3C-SiC
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批准号:18K18934
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项目类别:Grant-in-Aid for Challenging Research (Exploratory)
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资助金额:$3.99万
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财政年份:2018
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负责人:Kawanishi Sakiko
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依托单位:
Growth of inclusion-free SiC by in-situ interface observation and thermophysical property measurements
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批准号:17H04960
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项目类别:Grant-in-Aid for Young Scientists (A)
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资助金额:$15.56万
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财政年份:2017
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负责人:Kawanishi Sakiko
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依托单位:
Growth of high quality SiC crystal based on in-situ observation of growth interface and theoretical study
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批准号:26820334
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$2.5万
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财政年份:2014
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负责人:Kawanishi Sakiko
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依托单位:
海外基金