Development of Liquid-Crystalline Graphene-Based Semiconducting Elastomers

将聚乙烯醇稳定的二氧化硅粒子旋涂在高取向的热解石墨表面。氧等离子体对石墨的刻蚀形成了石墨柱。柱子与KMnO4、NaNO3和H2SO4反应，然后剥离，就可以生成石墨烯氧化物圆盘。用含胺基团的可聚合液晶分子对氧化石墨烯的表面进行化学修饰，使改性后的氧化石墨烯能够溶于有机溶剂，并呈现向列相和近晶相。以Irgacure 651为光引发剂的改性石墨烯氧化物在紫外光照射下聚合，形成了独立的薄膜。然而，由于每个氧化石墨烯的高度交联度，可以通过机械力改变导电率的半导体弹性体还没有开发出来。

Silica particles stabilized by poly(vinyl alcohol) in water was spin-coated on highly orientated pyrolytic graphite. The oxygen-plasma etching of the graphite resulted in the formation of graphite pillars. The reaction of the pillars with KMnO4, NaNO3, and H2SO4, and subsequent exfoliation allowed to produce graphene oxide disks. The surface of graphene oxide disks was chemically modified by polymerizable liquid-crystalline molecules with amine groups so that the modified graphene oxide could be soluble in organic solvents and exhibit nematic and smectic liquid-crystalline phases. The resulting modified graphene oxides containing Irgacure 651 as a photoradical initiator were polymerized by UV irradiation, which led to the formation of free-standing films. However, due to the high degree of crosslinking of each graphene oxide disks, semiconductive elastomers that can change the conductivities by mechanical force have not yet been developed.