Is it possible to grow InGaN ternary alloy by HVPE?

研究表明，采用一种新的生长系统可以生长节能型社会的关键材料InGaN，实现了InGaN的高质量生长和高生长速率，通过控制InGaN合金中的固相组成，InGaN的发射波长可以从365 nm到1900 nm变化。因此，InGaN作为一种高效的LED、LD和太阳能电池受到了人们的关注。然而，生长20%的In&gt；InGaN是困难的。没有成功的高质量InGaN的例子。研究发现，采用一种新的生长系统可以生长出20%的InGaN。

On the study, InGaNof the key material for Energy-saving society could be grown using a new growth system, where high quality growth of InGaN and high growth rate were realized.The wavelength emitted from InGaN can be varied from 365nm to 1900nm by controlling the solid In composition in InGaN alloy. Therefore, InGaN has attracted attention as a high-efficiency LED, LD and solar cell. However, it is difficult to grow InGaN of In >20%. There is no example of successful high quality InGaN. It was found that InGaN ofIn > 20% could be grown by a new growth system.