In situ Monitoring of Atomic Level Reaction on GaAs Surface Using Gravimetric and Optical Monitoring Methods

使用重量分析和光学监测方法原位监测 GaAs 表面的原子级反应

• 批准号: 09450009
• 负责人: KOUKITU Akinori
• 金额: $ 8.19万
• 依托单位: Tokyo University of Agriculture & Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450009/
• 关键词: GaAs; hydrogen-chemisorption; in situ monitoring; surface reconstruction; adsorption with dissociation; surface photo absorption; first principle calculation; 化合物半導体; 表面反応; As脱離; 光; マイクロバランス; ALE

In this study, the growth reaction and the reconstruction structure at the surface was investigated, using (1) in situ gravimetric and optical monitoring systems and (2) ab initio calculation. The results are listed below.1. In situ monitoring of hydrogen-chemisorption on GaAs (001), GaAs (111) B and GaAs (111)A surfaces was performed, and the hydrogen-chemisorption mechanism was clarified.2. Heat of chemisorption was obtained, which indicated that the chemisorption process was endthermic reaction.3. By ab inition calculation, it is found that hydrogen molecule attacked both atoms of Ga and As on the surface and Ga atoms on the first layer and As atoms on the second layer were terminated by hydrogen atoms.

在这项研究中，使用（1）原位重量监测系统以及（2）从头算计算，研究了表面的生长反应和重建结构。结果在下面列出。1。原位监测GAAS（001），GAAS（111）B和GAAS（111）上的氢化学吸附（111）进行表面，并阐明了氢化学机制。2。获得了化学吸附的热，这表明化学吸收过程是末端疗法。3。通过Ab onition计算，发现氢分子在第一层上攻击了GA的两个原子，以及在第一层的表面和GA原子上攻击了第二层的原子。

项目成果

T.Taki: "Investigation of Arsenic Desorption from GaAs (111)B Surface in Atmospheric Pressure Atomic Layer Epitaxy" Jpn.J.Appl.Phys.37. L1367-L1369 (1998)

T.Taki：“大气压原子层外延中 GaAs (111)B 表面砷解吸的研究”Jpn.J.Appl.Phys.37。

A. Koukitu: "Thermodynamic Analysis on the MOVPE Growth of Nitride Semiconductors Using Hydrazine"Physica Status solidi. 216. 707-712 (1999)

A. Koukitu：“使用肼对氮化物半导体的 MOVPE 生长进行热力学分析”物理状态固体。

A. Koukitu: "In Situ Monitoring of Arsenic Desorption on GaAs(111)B Surface in Atomic Layer Epitaxy"J. Crystal Growth. 198/199. 1111-1118 (1999)

A. Koukitu：“原子层外延中 GaAs(111)B 表面砷解吸的原位监测”J。

Y.Kumagai: "In-situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN"Applied Surface Science. (in press).

Y.Kumagai：“立方氮化镓卤素传输原子层外延的原位重力监测”应用表面科学。

Y. Kumagai, A. Koukitu and H. Seki: "Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs (111)A and (111) B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy"Jpn. J. Appl. Phys.. 89. L149-L151 (2000)

Y. Kumagai、A. Koukitu 和 H. Seki：“通过金属有机氯化氢气相外延法研究 GaAs (111)A 和 (111) B 表面上 GaN 生长的衬底取向依赖性”Jpn。