In situ Monitoring of Atomic Level Reaction on GaAs Surface Using Gravimetric and Optical Monitoring Methods

在这项研究中，生长反应和重建结构的表面进行了研究，使用（1）原位重量和光学监测系统和（2）从头计算。结果如下所示。1.对氢在GaAs（001）、GaAs（111）B和GaAs（111）A表面的化学吸附进行了原位监测，并阐明了氢的化学吸附机理.得到了化学吸附热，表明化学吸附过程为吸热反应.计算结果表明，氢分子同时攻击了表面的Ga和As原子，第一层的Ga原子和第二层的As原子被氢原子封端。

In this study, the growth reaction and the reconstruction structure at the surface was investigated, using (1) in situ gravimetric and optical monitoring systems and (2) ab initio calculation. The results are listed below.1. In situ monitoring of hydrogen-chemisorption on GaAs (001), GaAs (111) B and GaAs (111)A surfaces was performed, and the hydrogen-chemisorption mechanism was clarified.2. Heat of chemisorption was obtained, which indicated that the chemisorption process was endthermic reaction.3. By ab inition calculation, it is found that hydrogen molecule attacked both atoms of Ga and As on the surface and Ga atoms on the first layer and As atoms on the second layer were terminated by hydrogen atoms.