In situ Monitoring of Atomic Level Reaction on GaAs Surface Using Gravimetric and Optical Monitoring Methods

在本研究中，利用(1)原位重力和光学监测系统和(2)从头计算，研究了表面的生长反应和重建结构。结果如下：1。对GaAs（001）、GaAs (111) B和GaAs (111)A表面的氢化学吸附进行了原位监测，明确了氢化学吸附机理。测定了化学吸附热，表明化学吸附过程为吸热反应。通过初始计算，发现氢分子同时攻击表面的Ga原子和As原子，第一层Ga原子和第二层As原子被氢原子终止。

In this study, the growth reaction and the reconstruction structure at the surface was investigated, using (1) in situ gravimetric and optical monitoring systems and (2) ab initio calculation. The results are listed below.1. In situ monitoring of hydrogen-chemisorption on GaAs (001), GaAs (111) B and GaAs (111)A surfaces was performed, and the hydrogen-chemisorption mechanism was clarified.2. Heat of chemisorption was obtained, which indicated that the chemisorption process was endthermic reaction.3. By ab inition calculation, it is found that hydrogen molecule attacked both atoms of Ga and As on the surface and Ga atoms on the first layer and As atoms on the second layer were terminated by hydrogen atoms.