In situ gravimetric monitoring of atomic layr epitaxy using
In situ gravimetric monitoring of atomic layr epitaxy using
批准号:
06452108
负责人:
KOUKITU Akinori
金额:
$4.48万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 1995
中文摘要
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英文摘要
In situ monitoring techniques play an important role in the investigation on the atomic layr epitaxy (ALE) growth mechanism. In this research, we have investigated in situ gravimetric monitoring of ALE using metalorganic sources. The main results obtained are summarized as follows :(1) The resistance furnace is suitable heating system for the substrate.(2) In the short purge time, which is used for the common ALE growth, the gtowth rate is unity in each ALE cycle. However, the growth rate decreases to the constant value, 0.75, for the long purge time, which corresponds to the As coverage on a (2x4) reconstructed surface.The gravimetric and optical in situ methods were employed in this study. These methods provides real-time information under an atmospheric pressure. In particular, the gravimetric method is a powerful tool for the investigation of the ALE mechanism.
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纐纈明伯: "GaAs原子層エピタキシ-のその場観察-グラヴィメトリック法および表面光吸収法-" 日本結晶成長学会誌. 21. 32-37 (1994)
Akihaku Kokei:“GaAs原子层外延的原位观察-重量法和表面光吸收法”日本晶体生长学会杂志21. 32-37 (1994)。
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A.KOUKITU: "In situ gravimetric monitoring of arsenic desorption in GaAs atomic layer expitaxy" Journal of Crystal Growth. 146. 239-245 (1995)
A.KOUKITU:“GaAs 原子层外延中砷解吸的原位重力监测”《晶体生长杂志》。
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A.Koukitu: "In Situ Gravimetric Monitoring of Arsenic Descrption in GaAs Atomic Layer Epitaxy" J.Crystal Growth. 146. 239-245 (1995)
A.Koukitu:“GaAs 原子层外延中砷描述的原位重力监测”J.Crystal Growth。
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第9回「大学と科学」公開シンポジウム組織委員会編: "結晶成長のしくみを探る原子レベルでの成長メカニズム" (株)クバプロ, 189 (1995)
第九届‘大学与科学’公共研讨会组委会编:《探索原子水平上晶体生长的机制》Kubapro Co., Ltd.,189(1995)
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第9回「大学と科学」公開シンポジウム組織委員会編: "結晶成長のしくみを探る 原子レベルでの成長メカニズム" (株)クバプロ, 189 (1995)
第九届“大学与科学”公共研讨会组委会编:《探索晶体生长的机制:原子水平的生长机制》Kubapro Co., Ltd.,189(1995)
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共 22 条
Thick and high quarity InGaN growth by THVPE
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批准号:26246018
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$27.04万
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财政年份:2014
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负责人:KOUKITU Akinori
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依托单位:
Is it possible to grow InGaN ternary alloy by HVPE?
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批准号:24656011
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2012
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负责人:KOUKITU Akinori
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依托单位:
New Growth Method for Bulk GaN using molecule-controlling method
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批准号:23360008
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$13.15万
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财政年份:2011
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负责人:KOUKITU Akinori
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依托单位:
Thick Epitaxy of AlN and AlGaN with controlling source molecules and nano-crystal field.
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批准号:15360004
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.98万
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财政年份:2003
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负责人:KOUKITU Akinori
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依托单位:
Thermodynamic interactive database for vapor phase epitaxy using internet
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批准号:13650004
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.24万
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财政年份:2001
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负责人:KOUKITU Akinori
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依托单位:
Thermodynamic analysis system for vapor phase epitaxy by using internet
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批准号:10555003
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$9.73万
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财政年份:1998
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负责人:KOUKITU Akinori
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依托单位:
In situ Monitoring of Atomic Level Reaction on GaAs Surface Using Gravimetric and Optical Monitoring Methods
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批准号:09450009
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.19万
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财政年份:1997
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负责人:KOUKITU Akinori
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依托单位: