New Growth Method for Bulk GaN using molecule-controlling method

使用分子控制方法的块状 GaN 的新生长方法

• 批准号: 23360008
• 负责人: KOUKITU Akinori
• 金额: $ 13.15万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360008/
• 关键词: 窒化ガリウム; 窒化物; エピタキシャル成長; 自立基板結晶; HVPE; THVPE; 窒化物半導体; 気相成長; HVPE成長; バルク結晶; 原料分子制御

High quality crystal of GaN is a key material promising for energy-saving light emitting and high-power devices. In the study, a new source molecule, which was found out by the thermocynamic analysis and first principle calculation, was used as precursor for hydride vapoe phase epitaxy. Actually, the growth of GaN occured at 1200 C and the growth rate became more than 200 micron-m/hr.

高质量的GaN晶体是制备节能发光器件和大功率器件的关键材料。本研究中，通过热力学分析和第一性原理计算发现了一种新的源分子，并将其作为氢化物气相外延的前驱体。实际上，GaN的生长发生在1200 ℃，并且生长速率变得大于200微米/小时。

项目成果

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

源气供应顺序对(0001)蓝宝石衬底上AlN氢化物气相外延的影响

• DOI: 10.1016/j.jcrysgro.2011.10.014
• 发表时间: 2012
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: Rie Togashi;Toru Nagashima;Manabu Harada;Hisashi Murakami;Yoshinao Kumagai;Hiroyuki Yanagi;Akinori Koukitu
• 通讯作者: Akinori Koukitu

Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy

(0001)蓝宝石衬底上卤化物气相外延两步生长(0001)ZnO单晶层

• DOI: 10.1143/jjap.50.125503
• 发表时间: 2011
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Rui Masuda;Rie Togashi;Hisashi Murakami;Yoshinao Kumagai;Akinori Kouikitu
• 通讯作者: Akinori Kouikitu

On the origin of the 265 nm absorption band in AlN bulk crystals

• DOI: 10.1063/1.4717623
• 发表时间: 2012-05
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: R. Collazo;Jinqiao Xie;Benjamin E. Gaddy;Z. Bryan;R. Kirste;M. Hoffmann;R. Dalmau;B. Moody;Y. Kumagai;Toru Nagashima;Y. Kubota;T. Kinoshita;A. Koukitu;D. Irving;Z. Sitar

Thermodynamic analysis of InGaN-HVPE growth using III-bromides and III-iodides

使用 III 族溴化物和 III 族碘化物生长 InGaN-HVPE 的热力学分析

• 发表时间: 2012
• 作者: T. Hirasaki;H. Murakami;Y. Kumagai and A. Koukitu
• 通讯作者: Y. Kumagai and A. Koukitu

Control of in-plane epitaxial relationship of c-plane AlN layers grown on a-plane sapphire substrates by hydride vapor phase epitaxy

通过氢化物气相外延控制在 a 面蓝宝石衬底上生长的 c 面 AlN 层的面内外延关系

• 发表时间: 2011
• 期刊: Physica Status Solidi
• 作者: Jumpei Tajima;Rie Togashi;Hisashi Murakami;Yoshinao Kumagai;Kazuya Takada;Akinori Koukitu
• 通讯作者: Akinori Koukitu