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New Growth Method for Bulk GaN using molecule-controlling method

New Growth Method for Bulk GaN using molecule-controlling method
使用分子控制方法的块状 GaN 的新生长方法
批准号:
23360008
负责人:
KOUKITU Akinori
金额:
$13.15万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011-04-01 至 2014-03-31

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项目成果

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中文摘要
翻译
高质量的氮化镓晶体是一种有前景的节能发光和大功率器件的关键材料。本研究利用热力学分析和第一性原理计算发现了一种新的源分子作为氢化物气相外延的前驱体。实际上,GaN的生长发生在1200℃,生长速度超过200 μ m/hr。
英文摘要
High quality crystal of GaN is a key material promising for energy-saving light emitting and high-power devices. In the study, a new source molecule, which was found out by the thermocynamic analysis and first principle calculation, was used as precursor for hydride vapoe phase epitaxy. Actually, the growth of GaN occured at 1200 C and the growth rate became more than 200 micron-m/hr.
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Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates
源气供应顺序对(0001)蓝宝石衬底上AlN氢化物气相外延的影响
DOI: 10.1016/j.jcrysgro.2011.10.014
发表时间: 2012
期刊: Journal of Crystal Growth
影响因子: 1.8
作者: [Rie Togashi, Toru Nagashima, Manabu Harada, Hisashi Murakami, Yoshinao Kumagai, Hiroyuki Yanagi, Akinori Koukitu]
通讯作者: Akinori Koukitu
Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy
(0001)蓝宝石衬底上卤化物气相外延两步生长(0001)ZnO单晶层
DOI: 10.1143/jjap.50.125503
发表时间: 2011
期刊: Japanese Journal of Applied Physics
影响因子: 1.5
作者: [Rui Masuda, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Kouikitu]
通讯作者: Akinori Kouikitu
DOI: 10.1063/1.4717623
发表时间: 2012-05
期刊: Applied Physics Letters
影响因子: 4
作者: [R. Collazo;Jinqiao Xie;Benjamin E. Gaddy;Z. Bryan;R. Kirste;M. Hoffmann;R. Dalmau;B. Moody;Y. Kumagai;Toru Nagashima;Y. Kubota;T. Kinoshita;A. Koukitu;D. Irving;Z. Sitar]
通讯作者: R. Collazo;Jinqiao Xie;Benjamin E. Gaddy;Z. Bryan;R. Kirste;M. Hoffmann;R. Dalmau;B. Moody;Y. Kumagai;Toru Nagashima;Y. Kubota;T. Kinoshita;A. Koukitu;D. Irving;Z. Sitar
Thermodynamic analysis of InGaN-HVPE growth using III-bromides and III-iodides
使用 III 族溴化物和 III 族碘化物生长 InGaN-HVPE 的热力学分析
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [T. Hirasaki, H. Murakami, Y. Kumagai and A. Koukitu]
通讯作者: Y. Kumagai and A. Koukitu
共 43 条
    Thick and high quarity InGaN growth by THVPE
    Is it possible to grow InGaN ternary alloy by HVPE?
    Thick Epitaxy of AlN and AlGaN with controlling source molecules and nano-crystal field.
    Thermodynamic interactive database for vapor phase epitaxy using internet
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